公开(公告)号：WO2012002666A3

公开(公告)日：2012-01-05

申请号：PCT/KR2011/004524

申请日：2011-06-22

Applicant: SAMSUNG TECHWIN CO., LTD. ,  WON, Dong-Kwan ,  CHO, Seung-Min

Inventor： WON, Dong-Kwan ,  CHO, Seung-Min

IPC: C01B31/02 ,  C23C16/26 ,  C23C16/452

Abstract: A graphene manufacturing apparatus includes a gas supplying unit supplying a gas including carbon; a gas heating unit heating the gas supplied from the gas supplying unit; a deposition chamber in which a substrate having a catalyst layer is disposed; and an inlet pipe introducing the gas of the gas heating unit into the deposition chamber. A temperature of the deposition chamber is set at a temperature lower than a temperature of the gas heating unit so that a selection range with respect to a catalyst metal to be used in the catalyst layer may be expanded, and damage of the substrate due to a high temperature heat may be minimized.

公开(公告)号：WO2012002666A2

公开(公告)日：2012-01-05

申请号：PCT/KR2011004524

申请日：2011-06-22

Applicant: SAMSUNG TECHWIN CO LTD ,  WON DONG-KWAN ,  CHO SEUNG-MIN

Inventor： WON DONG-KWAN ,  CHO SEUNG-MIN

IPC: C01B31/02 ,  C23C16/26 ,  C23C16/452

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/182 ,  C01B32/186 ,  C23C16/01 ,  C23C16/0272 ,  C23C16/26

Abstract: A graphene manufacturing apparatus includes a gas supplying unit supplying a gas including carbon; a gas heating unit heating the gas supplied from the gas supplying unit; a deposition chamber in which a substrate having a catalyst layer is disposed; and an inlet pipe introducing the gas of the gas heating unit into the deposition chamber. A temperature of the deposition chamber is set at a temperature lower than a temperature of the gas heating unit so that a selection range with respect to a catalyst metal to be used in the catalyst layer may be expanded, and damage of the substrate due to a high temperature heat may be minimized.

Abstract translation: 石墨烯制造装置包括：供给包含碳的气体的气体供给单元; 气体加热单元，加热从气体供给单元供给的气体; 沉积室，其中设置有具有催化剂层的基板; 以及将气体加热单元的气体引入沉积室的入口管。 淀积室的温度设定在低于气体加热单元的温度的温度，使得相对于催化剂层中使用的催化剂金属的选择范围可能扩大，并且由于 可以将高温热量最小化。

公开(公告)号：WO2012020950A2

公开(公告)日：2012-02-16

申请号：PCT/KR2011/005731

申请日：2011-08-05

Applicant: SAMSUNG TECHWIN CO., LTD. ,  WON, Dong-Kwan ,  CHO, Seung-Min ,  YOON, Jong-Hyuk ,  NA, Doc-Hwa

Inventor： WON, Dong-Kwan ,  CHO, Seung-Min ,  YOON, Jong-Hyuk ,  NA, Doc-Hwa

IPC: C01B31/02 ,  B05D1/26

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/194 ,  H01L29/1606

Abstract: Provided is a method of post treating graphene and a method of manufacturing graphene using the post treatment method. The method includes providing a metal thin film on which graphene is formed, disposing a liquid phase carrier on the graphene, hardening the carrier, and separating the carrier and the graphene from the metal thin film.

Abstract translation: 提供了后处理石墨烯的方法和使用后处理方法制造石墨烯的方法。 该方法包括提供其上形成有石墨烯的金属薄膜，在石墨烯上设置液相载体，硬化载体，并将载体和石墨烯与金属薄膜分离。

公开(公告)号：WO2012020950A3

公开(公告)日：2012-05-24

申请号：PCT/KR2011005731

申请日：2011-08-05

Applicant: SAMSUNG TECHWIN CO LTD ,  WON DONG-KWAN ,  CHO SEUNG-MIN ,  YOON JONG-HYUK ,  NA DOC-HWA

Inventor： WON DONG-KWAN ,  CHO SEUNG-MIN ,  YOON JONG-HYUK ,  NA DOC-HWA

IPC: C01B31/02 ,  B05D1/26

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/194 ,  H01L29/1606

Abstract: Provided is a method of post treating graphene and a method of manufacturing graphene using the post treatment method. The method includes providing a metal thin film on which graphene is formed, disposing a liquid phase carrier on the graphene, hardening the carrier, and separating the carrier and the graphene from the metal thin film.

Abstract translation: 提供了一种后处理石墨烯的方法以及使用该后处理方法制造石墨烯的方法。 该方法包括提供其上形成有石墨烯的金属薄膜，将液相载体设置在石墨烯上，使载体硬化，以及将载体和石墨烯从金属薄膜分离。