公开(公告)号：WO1980000080A1

公开(公告)日：1980-01-24

申请号：PCT/US1979000407

申请日：1979-06-13

Applicant: GTE LABOR INC

Inventor： GTE LABOR INC ,  QUACKENBUSH C ,  SMITH T

IPC: C04B35/58

CPC classification number: C04B35/584 ,  C04B35/593

Abstract: The addition of controlled amounts of Al uO u to high purity Si uN u powder (containing less than 0.1 weight percent cation impurities and containing Y uO u as a densifying additive) enables shorter sintering times to achieve polycrystalline Si uN u bodies having densities approaching theoretical density, while a postsintering crystallization heat treatment results in strengths at high temperatures not otherwise obtainable in the presence of Al uO u. Resulting Si uN u bodies are useful as engine parts and components or a regenerator or recuperator structures for waste heat recovery. In addition, such Si uN u bodies containing Al uO u exhibit good oxidation resistance.

Abstract translation: 将受控量的Al u u加入到高纯度的Siuuu粉末（含有小于0.1重量％的阳离子杂质并含有Y u u u u）作为 致密化添加剂）能够缩短烧结时间以获得具有接近理论密度的密度的多晶Si体，同时后处理结晶热处理在高温下产生强度，否则在AlO 2存在下可获得 Ú。 所产生的Si u u u u u体可用作发动机部件和部件，或用于废热回收的再生器或换热器结构。 此外，这样的含有u u u u的这些Si元素显示出良好的抗氧化性。

公开(公告)号：WO1980001434A1

公开(公告)日：1980-07-10

申请号：PCT/US1980000006

申请日：1980-01-02

Applicant: GTE LABOR INC

Inventor： GTE LABOR INC ,  PETERS T ,  KIM H ,  GUSTAFSON J

IPC: H01H01/02

CPC classification number: G01N13/00 ,  H01H1/021 ,  H01H1/02372 ,  Y10S428/929 ,  Y10T428/12146

Abstract: An electrical contact of the type having a working surface and comprising a ductile metal and weld inhibiting material includes a wetting agent present in an amount sufficient to reduce the surface energy between said contact surface and the liquid phase of the ductile metal. Improved wettability of the surface results in reduced arc erosion due to the spattering loss of ductile metal. Also, described is a method for selecting and testing proposed additives.

公开(公告)号：WO1980000079A1

公开(公告)日：1980-01-24

申请号：PCT/US1979000406

申请日：1979-06-13

Applicant: GTE LABOR INC

Inventor： GTE LABOR INC ,  REID J ,  SMITH T ,  QUAIKENBUSH C

IPC: C04B35/50

CPC classification number: C04B35/584 ,  C04B35/593

Abstract: A Si uN u polycrystalline ceramic body consisting essentially of a first phase of Si uN u and a second intergranular phase comprising SiO u and a densifying additive, wherein the intergranular phase is substantially completely crystalline. The Si uN u body is prepared by sintering a body of particulate material which is free of glass forming impurities or sintering and heat treating a body of particulate material which contains glass forming impurities.

Abstract translation: 一种基本上由SiuNu的第一相组成的Si u U u多晶陶瓷体和包含SiO 2的第二晶间相和致密化添加剂，其中晶间相为 基本上完全结晶。 通过烧结不含玻璃形成杂质或烧结和热处理含有玻璃形成杂质的颗粒材料的体的颗粒材料体来制备硅酸盐体。