Abstract:
Silicon nitride materials with high strength, fracture toughness values, and Weibull moduli simultaneously, due to unique large grain reinforcing microstructures and well engineered grain boundary compositions. The invention demonstrates that, surprisingly and contrary to prior art, a silicon nitride material can be made which simultaneously has high strength above about 850-900 MPa, a Weibull above about 15 and high fracture toughness (above about 8 and 9 MPa.m1/2), and has reinforcing grains longer than 5 μm, typically longer than 10 μm in the microstructure without compromising its properties and reliability. The product of this invention can be processed using a variety of densification methods, including gas-pressure sintering, hot pressing, hot isostatic pressing, but is not limited to these, and does not require multiple heat treatments for all of these features to be achieved.
Abstract:
Laboratory heat press consists of furnace part equipped with dilatometer which is placed beneath removable double-acting pneumatic cylinder anchored on four shafts, of power supply and of computer which regulates process and collects data, while in the working space is situated graphite press die with sample, which is placed on sliding piston holder and the device is equipped with control electronics. Heating equipment is graphite element, and around the element are situated graphite shields made from solid graphite and graphite wool insulation. Outer shell of furnace and both flanges are water cooled. Flanges are equipped with holes for thrust pistons and the furnace shell contains hole for connecting the vacuum pump and hole for installation of the pyrometer. Graphite pressing die with sample is equipped with pistons, which are influenced by power from double-acting pneumatic cylinder, while on the both graphite pistons are graphite radiative rings and between them is graphite wool.
Abstract:
Silicon nitride materials with high strength, fracture toughness values, and Weibull moduli simultaneously, due to unique large grain reinforcing microstructures and well engineered grain boundary compositions. The invention demonstrates that, surprisingly and contrary to prior art, a silicon nitride material can be made which simultaneously has high strength above about 850-900 MPa, a Weibull above about 15 and high fracture toughness (above about 8 and 9 MPa.m 1/2 ), and has reinforcing grains longer than 5 μm, typically longer than 10 μm in the microstructure without compromising its properties and reliability. The product of this invention can be processed using a variety of densification methods, including gas-pressure sintering, hot pressing, hot isostatic pressing, but is not limited to these, and does not require multiple heat treatments for all of these features to be achieved.
Abstract:
L'invention est relative à l'utilisation d'une valve d'homogénéisation constituée d'un clapet (1), d'un anneau de choc (3) et d'un siège pour la préparation par la technologie haute-pression à valve d'une nanosuspension d'un principe actif pharmaceutique solide, caractérisée en ce que le matériau constituant le clapet, le siège et éventuellement l'anneau de choc et/ou la surface extérieure d'au moins l'un desdits éléments comprend comme composant majoritaire le nitrure de silicium fritte ou pressé à chaud. L'invention est aussi relatif à un procédé de préparation d'une nanosuspension d'un principe actif pharmaceutique solide par la technologie d'homogénéisation par haute pression du type à valve.
Abstract:
A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.
Abstract:
A silicon nitride based composite sintered product which comprises silicon nitride, a titanium based compound and boron nitride, or comprises silicon nitride, a titanium based nitride and/or a titanium based carbide, silicon carbide and graphite and/or carbon, and which exhibits a coefficient of friction under a non-lubrication condition of not more than 0.3 or not more than 0.2, respectively, and has an average particle size of 100 nm or less; and a silicon nitride based composite powder for use as the material of the sintered product, which comprises respective primary particles of silicon nitride, titanium nitride, titanium boride and boron nitride having an average particle size of not more than 20 mu m, or respective primary particles of silicon nitride, a titanium based compound and graphite and/or carbon having an average particle size of not more than 30 mu m, and phases including amorphous phases covering above respective primary particles; and a method for preparing the silicon nitride based composite powder which comprises admixing and pulverizing a raw material powder under an acceleration of 10 to 300 G, at room temperature to 250 DEG C, in a nitrogen atmosphere. The silicon nitride based composite sintered product exhibits excellent mechanical properties at a region of room temperature to a middle or low temperature, has a low coefficient of friction, and is excellent in wear resistance.
Abstract:
The present invention provides a composite pressure-sintered material comprising a continuous phase of hexagonal boron nitride and, dispersed therein, a second material comprising (a) at least one metal nitride selected from the group consisting of silicon, aluminium and titanium nitrides and (b) at least one stable metal oxide; wherein the amount of metal oxide is such that the second material does not contain more than 35% by weight of oxygen. It has been observed that this material possesses a low thermal expansion coefficient and therefore reveals good thermal shock resistance. Another characteristic of this material is its low wettability by molten steel which is thus responsible for excellent chemical resistance to liquid metal. Finally, this material is exceptionally mechanical wear resistant.
Abstract:
A fully densified, self-reinforced silicon nitride ceramic body of high fracture toughness and high fracture strength is disclosed comprising (a) beta -silicon nitride in the form of whiskers having an average aspect ratio of at least 2.5, and (b) a crystalline grain boundary phase having an oxynitride apatite structure, as determined by X-ray crystallography. A process for preparing the above-identified silicon nitride body comprises hot-pressing a powder mixture containing silicon nitride; silica; a densification aid including strontium oxide; a conversion aid, such as, yttrium oxide; and a compound, such as, calcium oxide which enhances growth of beta -silicon nitride whiskers, under conditions such that densification and the in situ formation of beta -silicon nitride whiskers having a high aspect ratio occur, and thereafter annealing the densified composition for a time sufficient to produce a crystalline grain boundary phase having an oxynitride apatite structure.
Abstract:
A method for making essentially crack free large cross section ceramic articles by injection molding techiques comprises the use of from about 0.1 v/o to about 10 v/o fibers with the ceramic injection molding formulation followed by the injection molding, binder removal and densification steps to form an essentially crack free densified large cross section ceramic article. The fibers are softened prior to the onset of densification and incorporated into the ceramic intergranular phase. This process eliminates the component distortion during densification which would have occurred if the fibers remained in the component.