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    METHOD FOR MANUFACTURING BACK CONTACT SOLAR CELL USING PUNCH-THROUGH
    1.
    发明申请
    METHOD FOR MANUFACTURING BACK CONTACT SOLAR CELL USING PUNCH-THROUGH 审中-公开
    使用PUNCH-THROUGH制造回接触太阳能电池的方法

    公开(公告)号：WO2013032256A1

    公开(公告)日：2013-03-07

    申请号：PCT/KR2012/006964

    申请日：2012-08-31

    申请人： HANWHA CHEMICAL CORPORATION. ,  LEE, Yong Hwa ,  CHO, Jae Eock ,  LEE, Hong Gu ,  SEO, Se-Young ,  HYUN, Deoc Hwan ,  KIM, Gang Il ,  JUNG, Woo Won

    发明人： LEE, Yong Hwa ,  CHO, Jae Eock ,  LEE, Hong Gu ,  SEO, Se-Young ,  HYUN, Deoc Hwan ,  KIM, Gang Il ,  JUNG, Woo Won

    IPC分类号： H01L31/042 ,  H01L31/0216 ,  H01L31/18

    CPC分类号： H01L31/022458 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

    摘要： Provided is a method for manufacturing a back contact solar cell. More particularly, the method includes: (a) forming via holes to penetrate two facing surfaces of a p-type semiconductor substrate by using laser; (b) performing heat treatment on the semiconductor substrate in the presence of n-type impurity, to thereby dope the n-type impurity in the semiconductor substrate; (c) forming an anti-reflective film on one surface of the two surfaces of the semiconductor substrate, and forming a passivation film on an opposite surface to one surface of the semiconductor substrate; (d) applying a first electrode material that penetrates the passivation film at the time of heat treatment, to thereby form first electrodes on opening parts of the via holes which are on the side of the opposite surface and a portion of the passivation film which is adjacent to the opening parts of the via holes, so as to cover the opening parts of the via holes, and applying a second electrode material that does not penetrate the passivation film at the time of heat treatment, to thereby form second electrodes to cover the first electrodes; (e) applying a third electrode material that penetrates the passivation film at the time of heat treatment, to thereby form third electrodes on the passivation film, and applying a fourth electrode material that does not penetrate the passivation film at the time of heat treatment, to thereby form fourth electrodes to cover the third electrodes; and (f) performing heat treatment on the semiconductor substrate having the first, second, third, and fourth electrodes to thereby allow only the first and third electrodes among the first, second, third, and fourth electrodes to be selectively connected with the semiconductor substrate through a punch-through phenomenon.

    摘要翻译： 提供一种背接触太阳能电池的制造方法。 更具体地，该方法包括：（a）通过使用激光形成通孔以穿透p型半导体衬底的两个相对表面; （b）在存在n型杂质的情况下对半导体衬底进行热处理，从而将n型杂质掺杂在半导体衬底中; （c）在半导体衬底的两个表面的一个表面上形成抗反射膜，并在与半导体衬底的一个表面相对的表面上形成钝化膜; （d）施加在热处理时穿透钝化膜的第一电极材料，从而在相对表面侧的通孔的开口部分上形成第一电极，以及钝化膜的一部分 邻近通孔的开口部分，以覆盖通孔的开口部分，并且在热处理时施加不穿透钝化膜的第二电极材料，从而形成第二电极以覆盖 第一电极; （e）施加在热处理时穿透钝化膜的第三电极材料，从而在钝化膜上形成第三电极，并施加在热处理时不穿透钝化膜的第四电极材料， 从而形成覆盖第三电极的第四电极; 和（f）对具有第一，第二，第三和第四电极的半导体衬底进行热处理，从而只允许第一，第二，第三和第四电极中的第一和第三电极与半导体衬底选择性地连接 通过穿透现象。

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：WO2012134061A3

    公开(公告)日：2012-11-29

    申请号：PCT/KR2012001371

    申请日：2012-02-23

    申请人： HANWHA CHEMICAL CORP ,  HYUN DEOC HWAN ,  CHO JAE EOCK ,  LEE DONG HO ,  RYU HYUN CHEOL ,  LEE YONG HWA ,  KIM GANG IL ,  AHN GUI RYONG

    发明人： HYUN DEOC HWAN ,  CHO JAE EOCK ,  LEE DONG HO ,  RYU HYUN CHEOL ,  LEE YONG HWA ,  KIM GANG IL ,  AHN GUI RYONG

    IPC分类号： H01L31/042 ,  H01L31/0236 ,  H01L31/18

    CPC分类号： H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Provided are a solar cell and a method for manufacturing the same, and more particularly, a solar cell for forming a selective emitter structure and a surface texture using dry plasma etching at the same time, and a method for manufacturing the same. The solar cell includes a silicon semiconductor substrate; an emitter doping layer having a surface, which is textured by a texturing process on an upper portion of the silicon semiconductor substrate and selectively doped; an anti-reflective film layer formed on a front of the substrate; a front electrode accessing to the emitter doping layer by penetrating the anti-reflective film layer; and a rear electrode accessing to a rear of the silicon semiconductor substrate.

    摘要翻译： 本发明提供一种太阳能电池及其制造方法，更具体地，涉及一种使用干等离子体蚀刻同时形成选择性发射极结构和表面纹理的太阳能电池及其制造方法。 太阳能电池包括硅半导体基板; 具有表面的发射极掺杂层，其通过在硅半导体衬底的上部上的纹理化处理而被选择性地掺杂; 形成在基板前面的抗反射膜层; 前电极通过穿透抗反射膜层而接近发射极掺杂层; 以及接近硅半导体衬底后部的后电极。

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：WO2012134061A2

    公开(公告)日：2012-10-04

    申请号：PCT/KR2012/001371

    申请日：2012-02-23

    申请人： HANWHA CHEMICAL CORPORATION. ,  HYUN, Deoc Hwan ,  CHO, Jae Eock ,  LEE, Dong Ho ,  RYU, Hyun Cheol ,  LEE, Yong Hwa ,  KIM, Gang Il ,  AHN, Gui Ryong

    发明人： HYUN, Deoc Hwan ,  CHO, Jae Eock ,  LEE, Dong Ho ,  RYU, Hyun Cheol ,  LEE, Yong Hwa ,  KIM, Gang Il ,  AHN, Gui Ryong

    IPC分类号： H01L31/042 ,  H01L31/0236 ,  H01L31/18

    CPC分类号： H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Provided are a solar cell and a method for manufacturing the same, and more particularly, a solar cell for forming a selective emitter structure and a surface texture using dry plasma etching at the same time, and a method for manufacturing the same. The solar cell includes a silicon semiconductor substrate; an emitter doping layer having a surface, which is textured by a texturing process on an upper portion of the silicon semiconductor substrate and selectively doped; an anti-reflective film layer formed on a front of the substrate; a front electrode accessing to the emitter doping layer by penetrating the anti-reflective film layer; and a rear electrode accessing to a rear of the silicon semiconductor substrate.

    摘要翻译： 提供了一种太阳能电池及其制造方法，更具体地，涉及一种使用干法等离子刻蚀同时形成选择性发射极结构和表面结构的太阳能电池，以及一种方法 为制造相同。 太阳能电池包括硅半导体衬底; 发射极掺杂层，所述发射极掺杂层具有通过在所述硅半导体衬底的上部上进行纹理化处理而纹理化并选择性地掺杂的表面; 在基板的正面上形成的抗反射膜层; 通过穿透抗反射膜层接近发射极掺杂层的前电极; 和一个接近硅半导体衬底后部的后电极。