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1.发明申请HIGH ASPECT RATIO TEMPLATE FOR LITHOGRAPHY, METHOD OF MAKING THE SAME TEMPLATE AND USE OF THE TEMPLATE FOR PERFORATING A SUBSTRATE AT NANOSCALE 审中-公开用于光刻的高均匀比例模板，制备相同模板的方法和用于在纳米结构上实施基底的模板的使用
公开(公告)号：WO2010015333A3
公开(公告)日：2010-05-27
申请号：PCT/EP2009005340
申请日：2009-07-23
Applicant: SMOLTEK AB , MUHAMMAD AMIN SALEEM , BRUD DAVID , BERG JONAS , KABIR MOHAMMAD SHALIQUAL , DESMARIS VINCENT
Inventor： MUHAMMAD AMIN SALEEM , BRUD DAVID , BERG JONAS , KABIR MOHAMMAD SHALIQUAL , DESMARIS VINCENT
IPC: G03F7/00
CPC classification number: G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/932
Abstract: Template and method of making high aspect ratio template, stamp, and imprinting at nanoscale using nanostructures for the purpose of lithography, and to the use of the template to create perforations on materials and products.
Abstract translation: 使用纳米结构制备高纵横比模板，印模和压印的模板和方法，用于光刻，以及使用模板在材料和产品上形成穿孔。
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2.发明申请TEMPLATE AND METHOD OF MAKING HIGH ASPECT RATIO TEMPLATE FOR LITHOGRAPHY AND USE OF THE TEMPLATE FOR PERFORATING A SUBSTRATE AT NANOSCALE 审中-公开制备高比例模板的模板和方法，用于模拟和使用模板在纳米岩上施加基材
公开(公告)号：WO2010015333A2
公开(公告)日：2010-02-11
申请号：PCT/EP2009/005340
申请日：2009-07-23
Applicant: SMOLTEK AB , MUHAMMAD, Amin Saleem , BRUD, David , BERG, Jonas , KABIR, Mohammad, Shaliqual , DESMARIS, Vincent
Inventor： MUHAMMAD, Amin Saleem , BRUD, David , BERG, Jonas , KABIR, Mohammad, Shaliqual , DESMARIS, Vincent
IPC: G03F7/00
CPC classification number: G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/932
Abstract: Template and method of making high aspect ratio template, stamp, and imprinting at nanoscale using nanostructures for the purpose of lithography, and to the use of the template to create perforations on materials and products.
Abstract translation: 使用纳米结构制备高纵横比模板，印模和压印的模板和方法，用于光刻，以及使用模板在材料和产品上形成穿孔。
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