ALUMINUM COMPOUND FOR FORMING ALUMINUM FILMS BY CHEMICAL VAPOR DEPOSITION AND THEIR SYNTHESIS
    2.
    发明申请
    ALUMINUM COMPOUND FOR FORMING ALUMINUM FILMS BY CHEMICAL VAPOR DEPOSITION AND THEIR SYNTHESIS 审中-公开
    通过化学蒸气沉积形成铝膜的铝化合物及其合成

    公开(公告)号:WO2007136184A1

    公开(公告)日:2007-11-29

    申请号:PCT/KR2007/002377

    申请日:2007-05-15

    CPC classification number: C07F5/069

    Abstract: The present invention relates to a precursor compound used for vapor -depositing an aluminum film on a substrate by means of chemical vapor deposition, and a process for preparing the compound. The present invention provides an organometallic complex defined by Chemical Formula 1, and a process for preparing the same. H 2 AlBH 4 : L n In the Formula, L is a Lewis base, an aminic organic compound which can provide unshared electron pair to the center of aluminum metal, such as a heterocyclic amine or an alkylamine, and n is an integer of 1 or 2.

    Abstract translation: 本发明涉及用于通过化学气相沉积将铝膜气相沉积在基材上的前体化合物及其制备方法。 本发明提供由化学式1定义的有机金属络合物及其制备方法。 在下式中,L是路易斯碱,可以提供未共享的电子对的氨基有机化合物,其中R 1,R 2,R 3,R 4,R 5, 铝金属的中心,例如杂环胺或烷基胺,n为1或2的整数。

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