Abstract:
The present invention relates to synthesis method of a precursor compound to deposit aluminum films on the substrate by chemical vapor deposition, and it provides the synthesis method of a compound defined as Formula 1 below. H 2 AlBH 4 :N (CH 3 ) 3
Abstract translation:本发明涉及通过化学气相沉积在基材上沉积铝膜的前体化合物的合成方法,并提供了下文定义的化合物的合成方法。 N 2(CH 3)3 H 2 N 2 CH 3
Abstract:
The present invention relates to a precursor compound used for vapor -depositing an aluminum film on a substrate by means of chemical vapor deposition, and a process for preparing the compound. The present invention provides an organometallic complex defined by Chemical Formula 1, and a process for preparing the same. H 2 AlBH 4 : L n In the Formula, L is a Lewis base, an aminic organic compound which can provide unshared electron pair to the center of aluminum metal, such as a heterocyclic amine or an alkylamine, and n is an integer of 1 or 2.