公开(公告)号：WO2015190749A1

公开(公告)日：2015-12-17

申请号：PCT/KR2015/005610

申请日：2015-06-04

Applicant: DNF CO., LTD.

Inventor： JANG, Se Jin ,  LEE, Sang-Do ,  KIM, Jong Hyun ,  KIM, Sung Gi ,  JEON, Sang Yong ,  YANG, Byeong-il ,  SEOK, Jang Hyeon ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C07F7/10 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42 ,  C23C16/513

CPC classification number: C07F7/10 ,  C23C16/345 ,  C23C16/45557

Abstract: Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si-N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si-N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Abstract translation: 提供了一种新的氨基甲硅烷基胺化合物和使用其的含有Si-N键的电介质膜的制造方法。 由于作为热稳定性高挥发性化合物的本发明的氨基甲硅烷基胺化合物可以在室温下进行处理，并且在室温和高压下用作液态化合物，本发明提供了一种制备方法 通过使用原子层沉积（PEALD）即使在低温和等离子体条件下也含有Si-N键的高纯度介电膜。

公开(公告)号：WO2015105337A1

公开(公告)日：2015-07-16

申请号：PCT/KR2015/000168

申请日：2015-01-08

Applicant: DNF CO.,LTD.

Inventor： JANG, Se Jin ,  LEE, Sang-Do ,  KIM, Jong Hyun ,  KIM, Sung Gi ,  KIM, Do Yeon ,  YANG, Byeong-il ,  SEOK, Jang Hyeon ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C07F7/10 ,  C23C16/18

CPC classification number: C07F7/10 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45542

Abstract: Provided are a novel trisilyl amine derivative, a method for preparing the same, and a siliconcontaining thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity siliconcontaining thin film having excellent physical and electrical properties by various deposition methods.

Abstract translation: 提供了一种新的三甲硅烷胺衍生物及其制备方法，以及使用其的含硅的薄膜，其中作为具有热稳定性，高挥发性和高反应性并且存在于液体中的化合物的三甲硅烷基胺衍生物 在室温和压力下处理可能的情况下，可以通过各种沉积方法形成具有优异的物理和电学性能的高纯度含硅薄膜。

公开(公告)号：WO2021034014A1

公开(公告)日：2021-02-25

申请号：PCT/KR2020/010771

申请日：2020-08-13

Applicant: DNF CO., LTD.

Inventor： JANG, Se Jin ,  KIM, Sung Gi ,  PARK, Jeong Joo ,  BYUN, Tae Seok ,  KWONE, Yong Hee ,  KIM, Yeong Hun ,  LIM, Haengdon ,  JEON, Sang Yong ,  LEE, Sang Ick

IPC: C07F7/21 ,  C23C16/40 ,  C23C16/455

Abstract: Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present invention has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.

公开(公告)号：WO2019132113A1

公开(公告)日：2019-07-04

申请号：PCT/KR2018/002428

申请日：2018-02-28

Applicant: DNF CO., LTD.

Inventor： KIM, Myong Woon ,  LEE, Sang Ick ,  CHO, Sung Woo ,  LEE, Kang Yong

IPC: H01L21/02 ,  H01L21/285 ,  C07F15/06 ,  C23C16/455

Abstract: The present invention relates to a method of manufacturing a cobalt containing thin film. According to the present invention, it is possible to provide a capping layer which is deposited on a metal wiring at a high deposition rate and planarized without deforming a shape of the cavity or a shape of the metal wiring due to a high aspect ratio in a highly integrated semiconductor device. Further, according to the present invention, it is possible to more improve the reliability of the metal wiring by providing a high-density, high-purity cobalt containing thin film by remarkably improving gap fill characteristics.

公开(公告)号：WO2018182318A1

公开(公告)日：2018-10-04

申请号：PCT/KR2018/003682

申请日：2018-03-29

Applicant: DNF CO., LTD.

Inventor： KIM, Sung Gi ,  PARK, Jeong Joo ,  PARK, Joong Jin ,  JANG, Se Jin ,  YANG, Byeong-il ,  LEE, Sang-Do ,  LEE, Sam Dong ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C09D4/00 ,  H01L21/02 ,  H01L21/324

Abstract: Provided are a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：WO2011078446A1

公开(公告)日：2011-06-30

申请号：PCT/KR2010/003245

申请日：2010-05-24

Applicant: DNF CO., LTD. ,  PARK, Jeong Hyeon ,  BYUN, Tae Seok ,  JEON, Sang Yong ,  SON, Seung ,  KWONE, Yong Hee ,  CHO, Yik-haeng ,  KIM, Jin Dong ,  KIM, Myong-Woon

Inventor： PARK, Jeong Hyeon ,  BYUN, Tae Seok ,  JEON, Sang Yong ,  SON, Seung ,  KWONE, Yong Hee ,  CHO, Yik-haeng ,  KIM, Jin Dong ,  KIM, Myong-Woon

IPC: C09K13/00

CPC classification number: H01L21/02087 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/3125

Abstract: Provided are a polysilazane treating solvent including one or more compound(s) selected from toluene and heptane and a (Cl2-C16)isoparaffin mixture, and a method for treating polysilazane using the same. More specifically, provided are a polysilazane treating solvent capable of chemically removing unwanted polysilazane coat film formed on a substrate, which may result in a severe problem in the semiconductor process if let alone, and a method for treating polysilazane using the same.

Abstract translation: 提供了包含一种或多种选自甲苯和庚烷的化合物和（Cl 2 -C 16）异链烷烃混合物的聚硅氮烷处理溶剂，以及使用其的聚硅氮烷的处理方法。 更具体地，提供了能够化学去除在基材上形成的不需要的聚硅氮烷涂层的聚硅氮烷处理溶剂，如果不用，则可能导致半导体工艺中的严重问题，以及使用其的处理聚硅氮烷的方法。

公开(公告)号：WO2018182309A1

公开(公告)日：2018-10-04

申请号：PCT/KR2018/003655

申请日：2018-03-28

Applicant: DNF CO., LTD.

Inventor： KIM, Sung Gi ,  PARK, Jeong Joo ,  PARK, Joong Jin ,  JANG, Se Jin ,  YANG, Byeong-il ,  LEE, Sang-Do ,  LEE, Sam Dong ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C09D183/16 ,  C23C16/24 ,  C23C16/40 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30 ,  C23C16/50 ,  C09D4/00 ,  H01L21/02

CPC classification number: C09D4/00 ,  C07F7/10 ,  C08G77/62 ,  C09D183/16 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：WO2014196827A3

公开(公告)日：2015-04-23

申请号：PCT/KR2014005006

申请日：2014-06-05

Applicant: DNF CO LTD

Inventor： JANG SE JIN ,  LEE SANG-DO ,  CHO JUN HEE ,  KIM SUNG GI ,  KIM JONG HYUN ,  YANG BYEONG-IL ,  SEOK JANG HYEON ,  LEE SANG ICK ,  KIM MYONG WOON

IPC: C07F7/10 ,  C08L83/04 ,  C23C16/06

CPC classification number: C07F7/10 ,  C23C16/402

Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film haying high purity and excellent physical and electrical properties by various deposition methods.

Abstract translation: 提供了一种新的氨基甲硅烷基胺化合物及其制备方法和使用该方法的含硅薄膜，其中氨基甲硅烷基胺化合物具有热稳定性和高挥发性，并保持在液态 室温下，在容易处理的压力下，通过各种沉积方法形成具有高纯度和优异物理和电学性质的含硅薄膜。

公开(公告)号：WO2012018160A1

公开(公告)日：2012-02-09

申请号：PCT/KR2010/007500

申请日：2010-10-29

Applicant: DNF CO.,LTD. ,  KIM, Myong Woon ,  KIM, Hyun Gwan ,  SONG, Ki Hun ,  LEE, Kang Gil ,  JEON, Sung Jun

Inventor： KIM, Myong Woon ,  KIM, Hyun Gwan ,  SONG, Ki Hun ,  LEE, Kang Gil ,  JEON, Sung Jun

IPC: C09D183/16 ,  C09D183/04 ,  C09D5/00 ,  C09K3/18

CPC classification number: C09K3/32 ,  C08G77/14 ,  C08G77/26 ,  C08G77/28 ,  C08L83/16 ,  C09D5/00 ,  C08L83/04

Abstract: Disclosed is a silicon based water repellent coating compositon that can increase an adhesive property on the surface of substrate, such as a glass, a glass lens, a mirror, a plastic, a plastic lens, a metal, a type of ceramic, a porcelain, a pottery, and acrylic panel, having excellent water repellency and durability of the water repellent, and also includes polysilazane, polysiloxane, and solvent.

Abstract translation: 公开了一种硅基防水涂料组合物，其可以增加基材表面上的粘合性，例如玻璃，玻璃透镜，反射镜，塑料，塑料透镜，金属，一种陶瓷，瓷 ，陶器和丙烯酸板，具有优异的防水性和防水性的耐久性，并且还包括聚硅氮烷，聚硅氧烷和溶剂。

公开(公告)号：WO2007136186A1

公开(公告)日：2007-11-29

申请号：PCT/KR2007/002389

申请日：2007-05-16

Applicant: DNF CO., LTD. ,  KIM, Myoung Won ,  KIM, Jin Dong ,  NA, Yong Hwan

Inventor： KIM, Myoung Won ,  KIM, Jin Dong ,  NA, Yong Hwan

IPC: C07F5/06

CPC classification number: C07F5/069

Abstract: The present invention relates to synthesis method of a precursor compound to deposit aluminum films on the substrate by chemical vapor deposition, and it provides the synthesis method of a compound defined as Formula 1 below. H 2 AlBH 4 :N (CH 3 ) 3

Abstract translation: 本发明涉及通过化学气相沉积在基材上沉积铝膜的前体化合物的合成方法，并提供了下文定义的化合物的合成方法。 N 2（CH 3）3 H 2 N 2 CH 3