Abstract:
Power amplifier (PA) apparatus (300) that includes: a PA device (302) operating at a fundamental frequency and having a maximum operating frequency that is higher than the fundamental frequency, an output current having a fundamental component at the fundamental frequency and a plurality of harmonic components at different harmonic frequencies of the fundamental frequency, and an output voltage based on the output current; a first matching circuit (310) coupled to the PA device and corresponding to the fundamental component; and a second matching circuit (320) coupled between the PA device and the first matching circuit and corresponding to at least one of the harmonic components, wherein the first and second matching circuits maintain the PA output voltage at a value that is no more than a predetermined maximum value, which is less than a breakdown voltage for the PA device.
Abstract:
An amplifier (100) that amplifies an input signal and provides the amplified signal to a load (114) at a summing junction (110) that has a first impedance value. The amplifier includes a splitter network (102) receiving the input signal and providing a phase delayed signal and an undelayed signal; a carrier amplifier path amplifying the phase delayed signal and including a carrier amplifier (106) and a first output match network (108) coupled between the carrier amplifier and the summing node; and a peaking amplifier path amplifying the undelayed signal and including a peaking amplifier (118), a second output match network (120) coupled to the peaking amplifier, and a phase delay element (122) coupled between the second output match network and the summing node, wherein the phase delay element provides a degree of phase delay and has a designed characteristic impedance value that is larger than the first impedance value for increasing the off-state impedance of the peaking amplifier.
Abstract:
Apparatus and methods are described for biasing amplifiers with multiple outputs. A semiconductor die (100) may include a reference Field Effect Transistor (FET) (112) integrated on the semiconductor die and coupled to an amplifier (116) integrated on the semiconductor die. A voltage offset circuit (114) may also be integrated on the semiconductor die (100) for determining the voltage needed to operate the amplifier (116).
Abstract:
Power amplifier (PA) apparatus (300) that includes: a PA device (302) operating at a fundamental frequency and having a maximum operating frequency that is higher than the fundamental frequency, an output current having a fundamental component at the fundamental frequency and a plurality of harmonic components at different harmonic frequencies of the fundamental frequency, and an output voltage based on the output current; a first matching circuit (310) coupled to the PA device and corresponding to the fundamental component; and a second matching circuit (320) coupled between the PA device and the first matching circuit and corresponding to at least one of the harmonic components, wherein the first and second matching circuits maintain the PA output voltage at a value that is no more than a predetermined maximum value, which is less than a breakdown voltage for the PA device.
Abstract:
An apparatus and method for adaptive biasing of a Doherty amplifier (102) is disclosed. The apparatus includes a carrier amplifier (210), a peaking amplifier (214), a carrier amplifier bias circuit (208) and a peaking amplifier bias circuit (212), all integrated onto a single chip. The method includes dividing an input signal into an in-phase signal and a quadrature phase signal. The method further includes sampling the input signal and applying the sampled signal to the biasing circuits. The method further includes adaptively biasing the carrier amplifier and the peaking amplifier by the output of the biasing circuits.
Abstract:
An amplifier (100) that amplifies an input signal and provides the amplified signal to a load (114) at a summing junction (110) that has a first impedance value. The amplifier includes a splitter network (102) receiving the input signal and providing a phase delayed signal and an undelayed signal; a carrier amplifier path amplifying the phase delayed signal and including a carrier amplifier (106) and a first output match network (108) coupled between the carrier amplifier and the summing node; and a peaking amplifier path amplifying the undelayed signal and including a peaking amplifier (118), a second output match network (120) coupled to the peaking amplifier, and a phase delay element (122) coupled between the second output match network and the summing node, wherein the phase delay element provides a degree of phase delay and has a designed characteristic impedance value that is larger than the first impedance value for increasing the off-state impedance of the peaking amplifier.
Abstract:
An apparatus and method for adaptive biasing of a Doherty amplifier (102) is disclosed. The apparatus includes a carrier amplifier (210), a peaking amplifier (214), a carrier amplifier bias circuit (208) and a peaking amplifier bias circuit (212), all integrated onto a single chip. The method includes dividing an input signal into an in-phase signal and a quadrature phase signal. The method further includes sampling the input signal and applying the sampled signal to the biasing circuits. The method further includes adaptively biasing the carrier amplifier and the peaking amplifier by the output of the biasing circuits.