Abstract:
The present invention relates to an electronic component, in particular a microelectromechanical system pressure sensor (7) or generally MEMS sensors which can be used for high pressures and high temperatures and extreme ambient conditions. The invention is distinguished by the fact that a particularly temperature-resistant semiconductor compound, to be precise silicon carbide (SiC), is used as the substrate. In this way, it is possible to detect high pressures and temperatures, in particular in turbines and compressors (10). In addition, an ultrasonic measured value transducer (9) is proposed for data transmission purposes.