公开(公告)号：WO9934358A3

公开(公告)日：1999-09-16

申请号：PCT/US9827834

申请日：1998-12-30

Applicant: LOU DAVID Y

Inventor： LOU DAVID Y

IPC: G11B7/0045 ,  G11B7/005 ,  G11B7/013 ,  G11B7/00 ,  G11B7/14

CPC classification number: G11B7/24085 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/013

Abstract: A multidimensional optical recording medium and recording and playback apparatus of the same are disclosed. The multidimensional optical recording medium includes a plurality of tracks having a tangential length, a radial width, and a track center. Each of the plurality of tracks is formed at a predetermined interval for writing data therein. At least one mark as encoded data is formed in at least one of the plurality of tracks. The data is encoded by modulating at least one of tangential position, tangential length, radial width, radial offset, or mark characteristic such as depth or reflectivity. The recording and playback apparatus include at least one light source (30) for radiating at least one light beam to the optical recording medium (36). The light beam is arranged such that the light beam spot is able to write and/or read marks anywhere within a track.

Abstract translation: 公开了一种多维光记录介质及其记录和重放装置。 多维光学记录介质包括具有切向长度，径向宽度和轨道中心的多个轨道。 以预定间隔形成多个磁道中的每一个，以便在其中写入数据。 作为编码数据的至少一个标记形成在多个轨道中的至少一个中。 数据通过调制切向位置，切线长度，径向宽度，径向偏移或标记特征（例如深度或反射率）中的至少一个进行编码。 记录和重放装置包括用于将至少一个光束照射到光学记录介质（36）的至少一个光源（30）。 光束布置成使得光束斑点能够在轨道内的任何地方写入和/或读取标记。

公开(公告)号：WO2009008958A2

公开(公告)日：2009-01-15

申请号：PCT/US2008/007759

申请日：2008-06-20

Applicant: LAM RESEARCH CORPORATION ,  YUN, Seokmin ,  WILCOXSON, Mark ,  ZHU, Ji ,  CHUANG, Kevin ,  CHANG, Hsiao, Wei ,  LOU, David

Inventor： YUN, Seokmin ,  WILCOXSON, Mark ,  ZHU, Ji ,  CHUANG, Kevin ,  CHANG, Hsiao, Wei ,  LOU, David

IPC: H01L21/3065

CPC classification number: H01L21/02063 ,  H01L21/6708

Abstract: A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.

Abstract translation: 用于从衬底表面除去蚀刻后聚合物残余物的系统和方法包括识别用于从衬底表面去除蚀刻后聚合物残余物的干式快速化学物质。 干闪光化学品被配置为选择性地去除在通过低k电介质膜层形成特征的区域中由蚀刻操作留下的蚀刻后聚合物残留物。 使用短闪速工艺来施加所识别的干闪光化学品，以去除至少一部分蚀刻后聚合物残余物，同时最小化对介电膜层的损害。 然后将湿清洁化学物质施加到基底的表面。 湿式清洁化学品的应用有助于基本上去除短闪过程留下的剩余蚀刻后聚合物残留物。

公开(公告)号：WO2009008958A3

公开(公告)日：2009-04-16

申请号：PCT/US2008007759

申请日：2008-06-20

Applicant: LAM RES CORP ,  YUN SEOKMIN ,  WILCOXSON MARK ,  ZHU JI ,  CHUANG KEVIN ,  CHANG HSIAO WEI ,  LOU DAVID

Inventor： YUN SEOKMIN ,  WILCOXSON MARK ,  ZHU JI ,  CHUANG KEVIN ,  CHANG HSIAO WEI ,  LOU DAVID

IPC: H01L21/3065

CPC classification number: H01L21/02063 ,  H01L21/6708

Abstract: A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.

Abstract translation: 用于从衬底表面去除蚀刻后聚合物残余物的系统和方法包括鉴定用于从衬底表面去除蚀刻后聚合物残余物的干闪光化学物质。 干闪化学物质被配置为通过在通过低k电介质膜层形成特征的区域中的蚀刻操作来选择性去除留下的后蚀刻聚合物残余物。 使用短闪光处理来施加所识别的干闪光化学物质，以除去至少一部分后蚀刻聚合物残余物，同时最小化对电介质膜层的损伤。 然后将湿清洗化学品施加到基底的表面。 湿式清洁化学品的应用有助于基本上去除短时间闪蒸过程留下的剩余后蚀刻聚合物残留物。