公开(公告)号：WO2010120654A1

公开(公告)日：2010-10-21

申请号：PCT/US2010/030630

申请日：2010-04-09

Applicant: LAM RESEARCH CORPORATION ,  KAWAGUCHI, Mark, Naoshi ,  MUI, David ,  WILCOXSON, Mark

Inventor： KAWAGUCHI, Mark, Naoshi ,  MUI, David ,  WILCOXSON, Mark

IPC: B08B7/04

CPC classification number: B08B3/08 ,  B08B3/12 ,  B08B5/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051

Abstract: The embodiments provide apparatus and methods for removing particles from a substrate surface, especially from a surface of a patterned substrate (or wafer). The cleaning apparatus and methods have advantages in cleaning patterned substrates with fine features without substantially damaging the features on the substrate surface. The cleaning apparatus and methods involve using a viscoelastic cleaning material containing a polymeric compound with large molecular weight, such as greater than 10,000 g/mol. The viscoelastic cleaning material entraps at least a portion of the particles on the substrate surface. The application of a force on the viscoelastic cleaning material over a sufficiently short period time causes the material to exhibit solid-like properties that facilitate removal of the viscoelastic cleaning material along with the entrapped particles. A number of forces can be applied over a short period to access the solid-like nature of the viscoelastic cleaning material. Alternatively, when the temperature of the viscoelastic cleaning material is lowered, the viscoelastic cleaning material also exhibits solid-like properties.

Abstract translation: 实施方案提供了用于从衬底表面，特别是从图案化衬底（或晶片）的表面去除颗粒的设备和方法。 清洁装置和方法在清洁具有精细特征的图案化基板而没有实质上损坏基板表面上的特征的优点。 清洁装置和方法涉及使用含有大分子量如高于10,000g / mol的聚合物的粘弹性清洁材料。 粘弹性清洁材料截留在基底表面上的至少一部分颗粒。 在足够短的时间段内对粘弹性清洁材料施加力导致材料表现出类似固体的性质，其便于与包裹的颗粒一起去除粘弹性清洁材料。 可以在短时间内施加许多力以获得粘弹性清洁材料的固体样性质。 或者，当粘弹性清洁材料的温度降低时，粘弹性清洁材料也呈现固体状特性。

公开(公告)号：WO2009008958A2

公开(公告)日：2009-01-15

申请号：PCT/US2008/007759

申请日：2008-06-20

Applicant: LAM RESEARCH CORPORATION ,  YUN, Seokmin ,  WILCOXSON, Mark ,  ZHU, Ji ,  CHUANG, Kevin ,  CHANG, Hsiao, Wei ,  LOU, David

Inventor： YUN, Seokmin ,  WILCOXSON, Mark ,  ZHU, Ji ,  CHUANG, Kevin ,  CHANG, Hsiao, Wei ,  LOU, David

IPC: H01L21/3065

CPC classification number: H01L21/02063 ,  H01L21/6708

Abstract: A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.

Abstract translation: 用于从衬底表面除去蚀刻后聚合物残余物的系统和方法包括识别用于从衬底表面去除蚀刻后聚合物残余物的干式快速化学物质。 干闪光化学品被配置为选择性地去除在通过低k电介质膜层形成特征的区域中由蚀刻操作留下的蚀刻后聚合物残留物。 使用短闪速工艺来施加所识别的干闪光化学品，以去除至少一部分蚀刻后聚合物残余物，同时最小化对介电膜层的损害。 然后将湿清洁化学物质施加到基底的表面。 湿式清洁化学品的应用有助于基本上去除短闪过程留下的剩余蚀刻后聚合物残留物。

公开(公告)号：WO2004077608A2

公开(公告)日：2004-09-10

申请号：PCT/US2004/004399

申请日：2004-02-12

Applicant: LAM RESEARCH CORPORATION ,  WILCOXSON, Mark, H. ,  BAILEY, Andrew, D., III

Inventor： WILCOXSON, Mark, H. ,  BAILEY, Andrew, D., III

IPC: H01Q

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01Q1/36 ,  H01Q7/00

Abstract: An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.

Abstract translation: 一种用于通过窗口在处理室内产生电场的天线装置。 通常，天线装置包括外环，包括围绕天线轴设置的第一外环转向，内环，包括围绕天线轴设置的第一内环转，其中内环比天线轴更靠近天线轴 外环是在每个方位角方向上的天线轴线，以及径向连接器将外环径向电连接到内环，其中径向连接器与窗口放置很大距离。

公开(公告)号：WO2011094038A2

公开(公告)日：2011-08-04

申请号：PCT/US2011/020283

申请日：2011-01-05

Applicant: LAM RESEARCH CORPORATION ,  MIKHAYLICHENKO, Katrina ,  SYOMIN, Denis ,  FU, Qian ,  GALE, Glenn W. ,  LIU, Shenjian ,  WILCOXSON, Mark H.

Inventor： MIKHAYLICHENKO, Katrina ,  SYOMIN, Denis ,  FU, Qian ,  GALE, Glenn W. ,  LIU, Shenjian ,  WILCOXSON, Mark H.

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/31111

Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Abstract translation: 提供了一种用于处理用于制造半导体器件的晶片的方法。 该方法可以包括在晶片上形成高纵横比特征，然后进行湿法处理和干燥。 在干燥过程中，会发生图案坍塌。 可以修复该图案塌陷以允许晶片的额外处理。 在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻会破坏在图案塌陷期间可能形成的键。

公开(公告)号：WO2010132371A2

公开(公告)日：2010-11-18

申请号：PCT/US2010/034264

申请日：2010-05-10

Applicant: LAM RESEARCH CORPORATION ,  KHOLODENKO, Arnold ,  MIKHAYLICHENKO, Katrina ,  LIN, Cheng-Yu (sean) ,  WILCOXSON, Mark ,  GINZBURG, Leon ,  KAWAGUCHI, Mark

Inventor： KHOLODENKO, Arnold ,  MIKHAYLICHENKO, Katrina ,  LIN, Cheng-Yu (sean) ,  WILCOXSON, Mark ,  GINZBURG, Leon ,  KAWAGUCHI, Mark

IPC: H01L21/302

CPC classification number: B08B3/041 ,  H01L21/02057 ,  H01L21/67051

Abstract: A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

Abstract translation: 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。 冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

公开(公告)号：WO2008103223A1

公开(公告)日：2008-08-28

申请号：PCT/US2008/001058

申请日：2008-01-24

Applicant: LAM RESEARCH CORPORATION ,  YUN, Seokmin ,  WILCOXSON, Mark ,  DE LARIOS, John, M.

Inventor： YUN, Seokmin ,  WILCOXSON, Mark ,  DE LARIOS, John, M.

IPC: H01L21/3105

CPC classification number: H01L21/02359 ,  C23C16/401 ,  C23C16/45563 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/67046 ,  H01L21/6715 ,  H01L21/76831

Abstract: An apparatus, system and method for repairing a carbon depleted low-k material in a low-k dielectric film layer includes identifying a repair chemistry having a hydrocarbon group, the repair chemistry configured to repair the carbon depleted low-k material and applying the identified repair chemistry meniscus to the low-k dielectric film layer such that the carbon depleted low-k material in the low-k dielectric film layer is sufficiently exposed to the repair chemistry meniscus substantially repairing the low-k material. The repaired low-k material exhibits substantially equivalent low-k dielectric characteristics of the low-k dielectric film layer.

Abstract translation: 用于修复低k电介质膜层中的碳缺乏的低k材料的装置，系统和方法包括鉴定具有烃基的修复化学物质，修复化学物质被配置为修复耗尽碳的低k材料并应用所识别的 将化学半月板修复到低k电介质膜层，使得低k电介质膜层中的碳缺乏的低k材料充分暴露于修复化学半月板基本上修复低k材料。 修复的低k材料表现出低k电介质膜层的基本上相当的低k电介质特性。

公开(公告)号：WO2008042295A1

公开(公告)日：2008-04-10

申请号：PCT/US2007/021003

申请日：2007-09-27

Applicant: LAM RESEARCH CORPORATION ,  O'DONNELL, Robert ,  LENZ, Eric ,  WILCOXSON, Mark ,  RAVKIN, Mike ,  YATSKAR, Alexander, A.

Inventor： O'DONNELL, Robert ,  LENZ, Eric ,  WILCOXSON, Mark ,  RAVKIN, Mike ,  YATSKAR, Alexander, A.

IPC: H01L21/304

CPC classification number: H01L21/67051 ,  H01L21/6708 ,  Y10S134/902 ,  Y10S269/90 ,  Y10S269/902 ,  Y10T29/49826

Abstract: A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.

Abstract translation: 描述了在由上下接近头形成的弯液面的处理期间支撑基板的载体。 载体包括具有开口尺寸的接收基板的框架和用于将基板支撑在开口内的多个支撑销。 开口略大于基板，使得基板和开口之间存在间隙。 提供了用于减小基板上的入口和/或出口痕迹的尺寸和频率的手段，该装置帮助和鼓励来自弯月面的液体以排出间隙。 还提供了一种减小入口和出口标记尺寸和频率的方法。

公开(公告)号：WO2004077608A3

公开(公告)日：2006-01-12

申请号：PCT/US2004004399

申请日：2004-02-12

Applicant: LAM RES CORP ,  WILCOXSON MARK H ,  BAILEY ANDREW D III

Inventor： WILCOXSON MARK H ,  BAILEY ANDREW D III

IPC: H01J37/32 ,  H01Q1/36 ,  H01Q7/00 ,  H01J7/24

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01Q1/36 ,  H01Q7/00

Abstract: An antenna arrangement (210) for generating an electric field inside a process chamber (202) through a window (212). Generally, the antenna arrangement (210) comprises an outer loop (610), comprising a first outer loop turn (618) disposed around an antenna axis (614), an inner loop (606), comprising a first inner loop turn (616) disposed around the antenna axis (614), wherein the inner loop (606) is closer to the antenna axis (614) than the outer loop (610) is to the antenna axis (614) in each azimuthal direction, and a radial connector (640) radially electrically connecting the outer loop (610) to the inner loop (606), wherein the radial connector (640) is placed a large distance from the window (212).

Abstract translation: 一种用于通过窗口（212）在处理室（202）内产生电场的天线装置（210）。 通常，天线装置（210）包括外环（610），包括设置在天线轴线（614）周围的第一外环路（618），内环路（606），包括第一内环路（616） 设置在所述天线轴线（614）周围，其中所述内环路（606）比所述外环路（610）在每个方位方向上相对于所述天线轴线（614）更靠近所述天线轴线（614），并且径向连接器 640）将所述外环（610）径向电连接到所述内环（606），其中所述径向连接器（640）与所述窗（212）放置距离很远。

公开(公告)号：WO2010129115A3

公开(公告)日：2011-01-13

申请号：PCT/US2010029273

申请日：2010-03-30

Applicant: LAM RES CORP ,  LIN CHENG-YU SEAN ,  KAWAGUCHI MARK ,  WILCOXSON MARK ,  MARTIN RUSSELL ,  GINZBURG LEON

Inventor： LIN CHENG-YU SEAN ,  KAWAGUCHI MARK ,  WILCOXSON MARK ,  MARTIN RUSSELL ,  GINZBURG LEON

IPC: H01L21/302 ,  H01L21/304

CPC classification number: H01L21/67051 ,  Y10S134/902

Abstract: An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially uni-directional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.

Abstract translation: 上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。 顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。 下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。 底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。 上下处理头可以分别包括顶侧和底部模块的多个实例。

公开(公告)号：WO2010147752A1

公开(公告)日：2010-12-23

申请号：PCT/US2010/036754

申请日：2010-05-28

Applicant: LAM RESEARCH CORPORATION ,  KAWAGUCHI, Mark ,  MUI, David ,  WILCOXSON, Mark

Inventor： KAWAGUCHI, Mark ,  MUI, David ,  WILCOXSON, Mark

IPC: B08B3/00

CPC classification number: H01L21/67051 ,  B08B3/10 ,  B08B7/0014 ,  C11D11/0047 ,  C11D11/0058 ,  C11D17/049 ,  H01L21/02052 ,  H01L21/02057

Abstract: Apparatus and methods for removing particle contaminants from a solid surface includes providing a layer of a viscoelastic material on the solid surface. The viscoelastic material is applied as a thin film and exhibits substantial liquid- like characteristics. The viscoelastic material at least partially binds with the particle contaminants. A high velocity liquid is applied to the viscoelastic material, such that the viscoelastic material exhibits solid- like behavior. The viscoelastic material is thus dislodged from the solid surface along with the particle contaminants, thereby cleaning the solid surface of the particle contaminants.

Abstract translation: 从固体表面去除颗粒污染物的装置和方法包括在固体表面上提供一层粘弹性材料。 粘弹性材料被用作薄膜并显示出显着的液体特性。 粘弹性材料至少部分地与颗粒污染物结合。 将高速液体施加到粘弹性材料上，使得粘弹性材料表现出固体状态。 因此粘弹性材料与颗粒污染物一起从固体表面脱落，从而清洁颗粒污染物的固体表面。