MOLECULAR MEMORY DEVICES INCLUDING SOLID-STATE DIELECTRIC LAYERS AND RELATED METHODS
    1.
    发明申请
    MOLECULAR MEMORY DEVICES INCLUDING SOLID-STATE DIELECTRIC LAYERS AND RELATED METHODS 审中-公开
    包括固态介质层的分子存储器件及相关方法

    公开(公告)号:WO2007065159A2

    公开(公告)日:2007-06-07

    申请号:PCT/US2006/061522

    申请日:2006-12-01

    Abstract: According to some embodiments, an article of manufacture comprises a substrate; a molecular layer on the substrate comprising at least one charge storage molecule coupled to the substrate by a molecular linker; a solid barrier dielectric layer directly on the molecular layer; and a conductive layer directly on the solid barrier dielectric layer. In some embodiments, the solid barrier dielectric layer is configured to provide a voltage drop across the molecular layer that is greater than a voltage drop across the solid barrier dielectric layer when a voltage is applied to the conductive layer. In some embodiments, the molecular layer has a thickness greater than that of the solid barrier dielectric layer. The article of manufacture contains no electrolyte between the molecular layer and the conductive layer.

    Abstract translation: 根据一些实施例,制品包括基底; 所述底物上的分子层包含通过分子连接基与所述底物偶联的至少一个电荷存储分子; 直接在分子层上的固体阻挡介电层; 以及直接在固体阻挡介电层上的导电层。 在一些实施例中,固体阻挡介电层被配置为当电压施加到导电层时,跨越分子层提供大于固体阻挡介电层上的电压降的电压降。 在一些实施例中,分子层的厚度大于固体阻挡介电层的厚度。 该制品在分子层和导电层之间不含电解质。

    MOLECULAR MEMORY DEVICES INCLUDING SOLID-STATE DIELECTRIC LAYERS AND RELATED METHODS
    2.
    发明申请
    MOLECULAR MEMORY DEVICES INCLUDING SOLID-STATE DIELECTRIC LAYERS AND RELATED METHODS 审中-公开
    包括固态介质层的分子存储器件及相关方法

    公开(公告)号:WO2007065159A3

    公开(公告)日:2008-06-19

    申请号:PCT/US2006061522

    申请日:2006-12-01

    Abstract: According to some embodiments, an article of manufacture comprises a substrate; a molecular layer on the substrate comprising at least one charge storage molecule coupled to the substrate by a molecular linker; a solid barrier dielectric layer directly on the molecular layer; and a conductive layer directly on the solid barrier dielectric layer. In some embodiments, the solid barrier dielectric layer is configured to provide a voltage drop across the molecular layer that is greater than a voltage drop across the solid barrier dielectric layer when a voltage is applied to the conductive layer. In some embodiments, the molecular layer has a thickness greater than that of the solid barrier dielectric layer. The article of manufacture contains no electrolyte between the molecular layer and the conductive layer.

    Abstract translation: 根据一些实施例,制品包括基底; 所述底物上的分子层包含通过分子连接基与所述底物偶联的至少一个电荷存储分子; 直接在分子层上的固体阻挡介电层; 以及直接在固体阻挡介电层上的导电层。 在一些实施例中,固体阻挡介电层被配置为当电压施加到导电层时,跨越分子层提供大于固体阻挡介电层上的电压降的电压降。 在一些实施例中,分子层的厚度大于固体阻挡介电层的厚度。 该制品在分子层和导电层之间不含电解质。

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