公开(公告)号：WO2008021125A3

公开(公告)日：2008-02-21

申请号：PCT/US2007/017624

申请日：2007-08-08

Applicant: DOW CORNING CORPORATION ,  MEYNEN, Herman, C.G.D.C. ,  HARKNESS, Brian

Inventor： MEYNEN, Herman, C.G.D.C. ,  HARKNESS, Brian

IPC: G03F7/075 ,  G03F7/32

Abstract: A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.

公开(公告)号：WO2008021125A2

公开(公告)日：2008-02-21

申请号：PCT/US2007017624

申请日：2007-08-08

Applicant: DOW CORNING ,  MEYNEN HERMAN C G D C ,  HARKNESS BRIAN

Inventor： MEYNEN HERMAN C G D C ,  HARKNESS BRIAN

CPC classification number: G03F7/0757 ,  G03F7/325 ,  Y10T428/24802

Abstract: A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.

Abstract translation: 在衬底上制备图案化膜的方法包括将硅氧烷组合物涂覆到衬底上以形成硅氧烷组合物的膜。 将该膜的一部分暴露于辐射下以产生具有曝光区域和非曝光区域的部分曝光的膜。 将部分曝光的膜加热足够的时间并在足够的温度下使曝光区域基本不溶于包含硅氧烷组分的展开溶剂中。 用显影溶剂除去部分曝光的膜的未曝光区域，以在基板上显现无膜区域并形成包括残留在基板上的曝光区域的图案化膜。 由于在显影溶剂中存在硅氧烷组分，无薄膜区基本上不含残余硅氧烷。

公开(公告)号：WO03005438A3

公开(公告)日：2003-05-01

申请号：PCT/US0220704

申请日：2002-06-25

Applicant: DOW CORNING ,  MEYNEN HERMAN ,  WEIDNER WILLIAM KENNETH ,  IACOPI FRANCESCA ,  MALHOUITRE STEPHANE

Inventor： MEYNEN HERMAN ,  WEIDNER WILLIAM KENNETH ,  IACOPI FRANCESCA ,  MALHOUITRE STEPHANE

IPC: H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76831 ,  H01L21/76802 ,  H01L21/76807 ,  H01L23/53209 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A sealing dielectric layer (1) is applied between a porous dielectric layer (2) and a metal diffusion barrier layer (7). The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition SixCy:Hz.

Abstract translation: 密封介电层（1）被施加在多孔介电层（2）和金属扩散阻挡层（7）之间。 密封介电层封闭多孔介电层的表面和侧壁上的孔隙。 本发明允许使用薄金属扩散阻挡层而不会在金属扩散阻挡层中产生针孔。 密封电介质层是具有组成SixCy：Hz的CVD沉积膜。

公开(公告)号：WO2003005438A2

公开(公告)日：2003-01-16

申请号：PCT/US2002/020704

申请日：2002-06-25

Applicant: DOW CORNING CORPORATION ,  MEYNEN, Herman ,  WEIDNER, William, Kenneth ,  IACOPI, Francesca ,  MALHOUITRE, Stephane

Inventor： MEYNEN, Herman ,  WEIDNER, William, Kenneth ,  IACOPI, Francesca ,  MALHOUITRE, Stephane

IPC: H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/76802 ,  H01L21/76807 ,  H01L23/53209 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A sealing dielectric layer is applied between a porous dielectric layer and a metal diffusion barrier layer. The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition Si x C y :H z .

Abstract translation: 密封电介质层（1）被施加在多孔介电层（2）和金属扩散阻挡层（7）之间。 密封电介质层封闭多孔介电层的表面和侧壁上的孔。 本发明允许使用薄金属扩散阻挡层，而不会在金属扩散阻挡层中产生针孔。 密封电介质层是具有SixCy:Hz组成的CVD沉积膜。