公开(公告)号：WO2011094132A3

公开(公告)日：2011-08-04

申请号：PCT/US2011/022075

申请日：2011-01-21

Applicant: LAM RESEARCH CORPORATION ,  YASSERI, Amir A. ,  ZHU, Ji ,  YUN, Seokmin ,  MUI, David S.L. ,  MIKHAYLICHENKO, Katrina

Inventor： YASSERI, Amir A. ,  ZHU, Ji ,  YUN, Seokmin ,  MUI, David S.L. ,  MIKHAYLICHENKO, Katrina

IPC: H01L21/302

Abstract: A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes.. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.

Abstract translation: 提供了一种用于处理高纵横比纳米结构的表面的方法，以在制造半导体器件所涉及的一些严格处理期间帮助保护精细的纳米结构。 处理包含高纵横比纳米结构的晶片以使纳米结构的表面更加疏水。 该处理可以包括应用底漆，该底漆化学改变纳米结构的表面，防止其在随后的湿法清洁过程期间被损坏。然后可以进一步处理晶片，例如湿法清洁过程，然后进行干燥过程。 纳米结构的疏水性增加有助于减少或防止纳米​​结构的塌陷。