公开(公告)号：WO1986005169A1

公开(公告)日：1986-09-12

申请号：PCT/JP1986000095

申请日：1986-02-27

Applicant: RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  MATSUDA, Toshitsugu ,  NAKAE, Hiroyuki ,  HIRAI, Toshio

Inventor： RESEARCH DEVELOPMENT CORPORATION OF JAPAN

IPC: C01B21/064

CPC classification number: C23C16/342 ,  C01B21/064 ,  C01P2002/72 ,  C01P2004/03 ,  C04B35/583 ,  C04B35/5831 ,  C30B35/002 ,  Y10S148/113

Abstract: Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapor deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.