公开(公告)号：WO2008014391A2

公开(公告)日：2008-01-31

申请号：PCT/US2007074460

申请日：2007-07-26

Applicant: FAIRCHILD SEMICONDUCTOR ,  YEDINAK JOSEPH A ,  WOODIN RICHARD L ,  REXER CHRISTOPHER L ,  SHENOY PRAVEEN MURALEEDHARAN ,  OH KWANGHOON ,  YUN CHONGMAN

Inventor： YEDINAK JOSEPH A ,  WOODIN RICHARD L ,  REXER CHRISTOPHER L ,  SHENOY PRAVEEN MURALEEDHARAN ,  OH KWANGHOON ,  YUN CHONGMAN

IPC: H01L21/00 ,  H01L31/0312

CPC classification number: H01L29/872 ,  H01L27/0248 ,  H01L29/1608 ,  H01L29/8618 ,  H01L29/87

Abstract: A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes, or a PNP transistor, across the blocking junction of the wide bandgap device.

Abstract translation: 一种用于在抑制电压瞬变期间保护宽带隙器件不发生故障的方法和装置。 通过在宽带隙器件的阻塞结上放置一个或多个二极管或PNP晶体管来实现雪崩能力的改善。

公开(公告)号：WO2008014391A3

公开(公告)日：2008-01-31

申请号：PCT/US2007/074460

申请日：2007-07-26

Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION ,  YEDINAK, Joseph, A. ,  WOODIN, Richard, L. ,  REXER, Christopher, L. ,  SHENOY, Praveen, Muraleedharan ,  OH, Kwanghoon ,  YUN, Chongman

Inventor： YEDINAK, Joseph, A. ,  WOODIN, Richard, L. ,  REXER, Christopher, L. ,  SHENOY, Praveen, Muraleedharan ,  OH, Kwanghoon ,  YUN, Chongman

IPC: H01L21/331 ,  H01L31/111

Abstract: A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes 255-260. or a PNP transistor 205, across the blocking junction of a wide bandgap device 210 or 250.