公开(公告)号：WO2008014391A2

公开(公告)日：2008-01-31

申请号：PCT/US2007074460

申请日：2007-07-26

Applicant: FAIRCHILD SEMICONDUCTOR ,  YEDINAK JOSEPH A ,  WOODIN RICHARD L ,  REXER CHRISTOPHER L ,  SHENOY PRAVEEN MURALEEDHARAN ,  OH KWANGHOON ,  YUN CHONGMAN

Inventor： YEDINAK JOSEPH A ,  WOODIN RICHARD L ,  REXER CHRISTOPHER L ,  SHENOY PRAVEEN MURALEEDHARAN ,  OH KWANGHOON ,  YUN CHONGMAN

IPC: H01L21/00 ,  H01L31/0312

CPC classification number: H01L29/872 ,  H01L27/0248 ,  H01L29/1608 ,  H01L29/8618 ,  H01L29/87

Abstract: A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes, or a PNP transistor, across the blocking junction of the wide bandgap device.

Abstract translation: 一种用于在抑制电压瞬变期间保护宽带隙器件不发生故障的方法和装置。 通过在宽带隙器件的阻塞结上放置一个或多个二极管或PNP晶体管来实现雪崩能力的改善。

公开(公告)号：WO2005091988A2

公开(公告)日：2005-10-06

申请号：PCT/US2005/008943

申请日：2005-03-18

Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION ,  SENG, William, F. ,  WOODIN, Richard, L.

Inventor： SENG, William, F. ,  WOODIN, Richard, L.

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0312

CPC classification number: H01L21/0495 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/812 ,  H01L29/872 ,  Y10S438/931

Abstract: A Schottky baroer silicon carbide device has a Re Schottky metal contact. The Re contact (27) is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

Abstract translation: 肖特基巴氏碳化硅器件具有肖特基金属触点。 Re触点（27）厚于250埃，可以在2000和4000埃之间。 通过离子铣削肖特基接触周围的环形区域提供端接结构。

公开(公告)号：WO2005091988A3

公开(公告)日：2006-12-07

申请号：PCT/US2005008943

申请日：2005-03-18

Applicant: FAIRCHILD SEMICONDUCTOR ,  SENG WILLIAM F ,  WOODIN RICHARD L

Inventor： SENG WILLIAM F ,  WOODIN RICHARD L

IPC: H01L27/095 ,  H01L21/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0256 ,  H01L31/0312

CPC classification number: H01L21/0495 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/812 ,  H01L29/872 ,  Y10S438/931

Abstract: A Schottky baroer silicon carbide device has a Re Schottky metal contact. The Re contact (27) is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

Abstract translation: 肖特基巴氏碳化硅器件具有肖特基金属触点。 Re触点（27）厚于250埃，可以在2000和4000埃之间。 通过离子铣削肖特基接触周围的环形区域提供端接结构。

公开(公告)号：WO1997005757A1

公开(公告)日：1997-02-13

申请号：PCT/US1996012574

申请日：1996-07-31

Applicant: CRYSTALLINE MATERIALS CORPORATION ,  LEWIS, Elliott ,  KOBA, Richard ,  WOODIN, Richard, L.

Inventor： CRYSTALLINE MATERIALS CORPORATION

IPC: H05K03/02

CPC classification number: C23C16/276 ,  B23K1/0016 ,  B23K2101/40 ,  H01L21/4803 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: The present invention pertains to the packaging of electronic circuit. More particularly, the present invention pertains to methods for adherently bonding metals (4) to diamond (1) (i.e. the formation of a metal-diamond bonded structure) to yield metal-diamond substrates which are suitable for use in the fabrication of electronic packaging. These metal-diamond substrates exhibit both high thermal conductivity and dielectric isolation (where necessary), while being compatible with electronic package fabrication and the attachment of most semiconductor devices. The methods of the present invention include the formation of adherently bonded metal (5) by: the metallization of a bare diamond surface by the deposition of base coat or primer coat comprising certain carbide-forming metals such as molybdenum and tungsten; the metalization of a bare diamond surface using an active braze alloy; and by the growth of a diamond layer on a carbide-forming substrate by chemical vapor deposition (CVD).

Abstract translation: 本发明涉及电子电路的封装。 更具体地说，本发明涉及将金属（4）与金刚石（1）粘合地结合（即，形成金属 - 金刚石键合结构）以产生适合用于制造电子封装的金属 - 金刚石基底的方法 。 这些金属 - 金刚石基底表现出高导热性和介电隔离（必要时），同时兼容电子封装制造和大多数半导体器件的连接。 本发明的方法包括：通过以下方式形成粘合的金属（5）：通过沉积包含某些碳化物形成金属如钼和钨的底涂层或底漆涂层对裸金刚石表面进行金属化; 使用活性钎焊合金对裸钻石表面进行金属化; 以及通过化学气相沉积（CVD）在碳化物形成衬底上生长金刚石层。

公开(公告)号：WO2008014391A3

公开(公告)日：2008-01-31

申请号：PCT/US2007/074460

申请日：2007-07-26

Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION ,  YEDINAK, Joseph, A. ,  WOODIN, Richard, L. ,  REXER, Christopher, L. ,  SHENOY, Praveen, Muraleedharan ,  OH, Kwanghoon ,  YUN, Chongman

Inventor： YEDINAK, Joseph, A. ,  WOODIN, Richard, L. ,  REXER, Christopher, L. ,  SHENOY, Praveen, Muraleedharan ,  OH, Kwanghoon ,  YUN, Chongman

IPC: H01L21/331 ,  H01L31/111

Abstract: A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes 255-260. or a PNP transistor 205, across the blocking junction of a wide bandgap device 210 or 250.