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    POLISHING COMPOSITIONS CONTAINING CHARGED ABRASIVE
    1.
    发明申请
    POLISHING COMPOSITIONS CONTAINING CHARGED ABRASIVE 审中-公开

    公开(公告)号：WO2019070470A1

    公开(公告)日：2019-04-11

    申请号：PCT/US2018/052804

    申请日：2018-09-26

    Applicant: FUJIFILM PLANAR SOLUTIONS, LLC

    Inventor： MISHRA, Abhudaya

    IPC: C09G1/02 ,  C01B33/12 ,  C03C25/68

    Abstract: Polishing compositions that can selectively and preferentially polish certain dielectric films over other dielectric films are provided herein. These polishing compositions include either cationic or anionic abrasives based on the target dielectric film to be removed and preserved. The polishing compositions utilize a novel electrostatic charge based design, where based on the charge of the abrasives and their electrostatic interaction (forces of attraction or repulsion) with the charge on the dielectric film, various material removal rates and polishing selectivities can be achieved.

    FLUID PROCESSING
    2.
    发明申请
    FLUID PROCESSING 审中-公开
    流体加工

    公开(公告)号：WO2010091388A1

    公开(公告)日：2010-08-12

    申请号：PCT/US2010/023567

    申请日：2010-02-09

    Applicant: PLANAR SOLUTIONS, LLC ,  MOHSENI, Saeed, H. ,  MAHULIKAR, Deepak

    Inventor： MOHSENI, Saeed, H. ,  MAHULIKAR, Deepak

    IPC: B01D25/00

    CPC classification number: B01D35/143 ,  B01D29/56 ,  B01D29/96 ,  B01D2201/265

    Abstract: Fluid processing apparatuses and systems are disclosed. In some embodiments the fluid processing apparatuses include a movable enclosure (38), a plurality of filter housings (30) disposed substantially within the movable enclosure (38), and a stand (36) disposed within the enclosure (38). The filter housings (46a; 47a; 48a) are in fluid communication with one another. Each filter housing (46a; 47a; 48a) defines an elongate path and is configured to support a respective filter (49) along the elongate flow path to filter a substantially continuous flow of fluid. The stand (36) supports each filter housing (46a; 47a; 48a) such that the elongate flow path of each filter housing (46a; 47a; 48a) is substantially parallel to a vertical axis, wherein each filter housing (46a; 47a; 48a) is independently rotatable, relative to the stand (36).

    Abstract translation: 公开了流体处理装置和系统。 在一些实施例中，流体处理设备包括可动外壳（38），基本上设置在可移动外壳（38）内的多个过滤器壳体（30）和设置在外壳（38）内的支架。 过滤器壳体（46a; 47a; 48a）彼此流体连通。 每个过滤器壳体（46a; 47a; 48a）限定细长路径并且构造成沿着细长流动路径支撑相应的过滤器（49）以过滤基本连续的流体流。 支架（36）支撑每个过滤器壳体（46a; 47a; 48a），使得每个过滤器壳体（46a; 47a; 48a）的细长流动路径基本上平行于垂直轴线，其中每个过滤器壳体（46a; 47a; 48a）相对于支架（36）独立地可旋转。

    POLISHING COMPOSITIONS AND METHODS OF USE THEREOF
    3.
    发明申请
    POLISHING COMPOSITIONS AND METHODS OF USE THEREOF 审中-公开

    公开(公告)号：WO2018183310A1

    公开(公告)日：2018-10-04

    申请号：PCT/US2018/024543

    申请日：2018-03-27

    Applicant: FUJIFILM PLANAR SOLUTIONS, LLC

    Inventor： LEONOV, Alexei P. ,  MISHRA, Abhudaya

    IPC: C09G1/02 ,  H01L21/306

    Abstract: The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2): Formula (I) at least one compound of structure (I): (I), 3) at least one compound of structure (II): Formula (II); and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R 1 -R 7 , X, Y, and Z 1 -Z 3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

    ELEVATED TEMPERATURE CMP COMPOSITIONS AND METHODS FOR USE THEREOF
    5.
    发明申请
    ELEVATED TEMPERATURE CMP COMPOSITIONS AND METHODS FOR USE THEREOF 审中-公开
    高温CMP组合物及其使用方法

    公开(公告)号：WO2018071285A1

    公开(公告)日：2018-04-19

    申请号：PCT/US2017/055469

    申请日：2017-10-06

    Applicant: FUJIFILM PLANAR SOLUTIONS, LLC

    Inventor： MAHULIKAR, Deepak

    IPC: C23F1/10 ,  C09G1/02

    Abstract: CMP compositions providing stable and robust polishing performance at elevated pad or wafer surface temperatures are disclosed, as well as methods for use thereof. The compositions of the disclosure include reaction rate optimizing (RRO) compounds that optimize various chemical reactions occurring in the slurry chemistry at elevated polishing temperatures on the wafer surface, such that removal rate variation within an individual wafer is

    Abstract translation: 公开了在提高的衬垫或晶片表面温度下提供稳定且坚固的抛光性能的CMP组合物及其使用方法。 本公开的组合物包括反应速率优化（RRO）化合物，其优化晶片表面上升高的抛光温度下浆料化学中发生的各种化学反应，使得单个晶片内的去除速率变化< 10％。

    ADVANCED FLUID PROCESSING METHODS AND SYSTEMS
    6.
    发明申请
    ADVANCED FLUID PROCESSING METHODS AND SYSTEMS 审中-公开
    先进的流体处理方法和系统

    公开(公告)号：WO2017155669A1

    公开(公告)日：2017-09-14

    申请号：PCT/US2017/017785

    申请日：2017-02-14

    Applicant: FUJIFILM PLANAR SOLUTIONS, LLC

    Inventor： CHOU, Shih-Pin ,  CHANG, Wen-Hung ,  MAHULIKAR, Deepak ,  VARGA, Tamas ,  MISHRA, Abhudaya

    IPC: B01F5/10

    Abstract: This disclosure features methods of forming chemical compositions. The method includes (1) mixing a plurality of continuous material flows in a mixing tank to form a chemical composition, each continuous material flow including at least one component of the composition; and (2) moving a continuous flow of the chemical composition to a packaging station downstream of the mixing tank. The mixing and moving steps are performed continuously. This disclosure also features systems that can be used to perform such methods.

    Abstract translation: 本公开内容以形成化学组合物的方法为特征。 该方法包括（1）将多个连续材料流在混合罐中混合以形成化学组合物，每个连续材料流包括组合物的至少一种组分; 和（2）将化学组合物的连续流动移动到混合罐下游的包装站。 混合和移动步骤连续进行。 本发明还具有可用于执行此类方法的系统。

    FUMED SILICA TO COLLOIDAL SILICA CONVERSION PROCESS
    7.
    发明申请
    FUMED SILICA TO COLLOIDAL SILICA CONVERSION PROCESS 审中-公开
    氟化硅胶转化为硅胶转化工艺

    公开(公告)号：WO2007001485A2

    公开(公告)日：2007-01-04

    申请号：PCT/US2006/001589

    申请日：2006-01-17

    Applicant: PLANAR SOLUTIONS, LLC ,  MAHULIKAR, Deepak ,  WANG, Yuhu

    Inventor： MAHULIKAR, Deepak ,  WANG, Yuhu

    IPC: C01B33/20 ,  C01B33/141 ,  C09K3/14 ,  C01B33/12

    CPC classification number: C09K3/1463 ,  C01B33/14 ,  C01B33/1435 ,  C01B33/22

    Abstract: A method of manufacturing a colloidal silica dispersion, by dissolving a fumed silica in an aqueous solvent having an alkali metal hydroxide to produce an alkaline silicate solution; removing the alkali metal via ion exchange to produce a silicic acid solution; adjusting the temperature, concentration and pH of the silicic acid solution to values sufficient to initiate nucleation and particle growth at elevated temperatures; and cooling the silicic acid solution at a rate sufficient to produce the colloidal silica dispersion. The colloidal silica particles in the colloidal silica dispersion have a mean particle size about 2 nm to about 100 nm. Also provided is a method of chemical mechanical polishing a surface of a substrate by contacting the substrate and a composition having a plurality of colloidal silica particles according to the present invention and a medium for suspending the particles. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.

    Abstract translation: 通过将热解法二氧化硅溶解在具有碱金属氢氧化物的水性溶剂中以制备碱性硅酸盐溶液来制备胶体二氧化硅分散体的方法; 通过离子交换除去碱金属，生成硅酸溶液; 将硅酸溶液的温度，浓度和pH调节到足以在升高的温度下引发成核和颗粒生长的值; 并以足以产生胶体二氧化硅分散体的速率冷却硅酸溶液。 胶体二氧化硅分散体中的胶体二氧化硅颗粒的平均粒径约为2nm至约100nm。 还提供了通过使基板和具有根据本发明的多个胶体二氧化硅颗粒的组合物和用于悬浮颗粒的介质的组合物进行化学机械抛光基板的表面的方法。 接触在足以使基材平坦化的温度下进行一段时间。

    POLISHING COMPOSITIONS
    9.
    发明申请
    POLISHING COMPOSITIONS 审中-公开

    公开(公告)号：WO2018125905A1

    公开(公告)日：2018-07-05

    申请号：PCT/US2017/068507

    申请日：2017-12-27

    Applicant: FUJIFILM PLANAR SOLUTIONS, LLC

    Inventor： MCDONOUGH, James

    IPC: C09G1/02

    Abstract: The present disclosure provides chemical mechanical polishing compositions that achieve minimal dishing at reduced dishing reducer (DR) levels when compared to known CMP compositions. The compositions of the disclosure include a dynamic surface tension reducer (DSTR) which allows for lower levels of dishing reducer in the compositions. Indeed, the compositions of the disclosure allow for lower levels of dishing reducer to achieve the same dishing as known compositions having higher levels of dishing reducer. Deleterious effects of high DR levels are thereby avoided or minimized when employing the compositions of the disclosure.

    HOMOGENEOUS BLENDING
    10.
    发明申请
    HOMOGENEOUS BLENDING 审中-公开
    均匀混合

    公开(公告)号：WO2013039750A1

    公开(公告)日：2013-03-21

    申请号：PCT/US2012/053781

    申请日：2012-09-05

    Applicant: PLANAR SOLUTIONS, LLC ,  MOHSENI, Saeed H. ,  GRAMM, Elizabeth K. ,  MAHULIKAR, Deepak

    Inventor： MOHSENI, Saeed H. ,  GRAMM, Elizabeth K. ,  MAHULIKAR, Deepak

    IPC: B01F3/12 ,  B01F3/18 ,  B01F5/00

    CPC classification number: C09K3/1463 ,  C09G1/02

    Abstract: A method of forming a colloidal dispersion includes providing a first continuous material flow, providing a second continuous material flow, combining the first and second continuous material flows, and moving a continuous flow of a colloidal dispersion in a direction downstream of the first and second continuous flows. The first continuous material flow includes one or more of a diluent (e.g., deionized water), a base, and an acid, and the second continuous material flow includes an abrasive particle solution. The first and second material flows are combined with a Reynolds number greater than about 4400 and less than about 25000 (e.g., about 74000 to about 25000). The colloidal dispersion includes the diluent, the base, the acid, and abrasive particles from the abrasive particle solution.

    Abstract translation: 形成胶体分散体的方法包括提供第一连续材料流，提供第二连续材料流，组合第一和第二连续材料流，以及在第一和第二连续材料流的下游方向上移动胶体分散体的连续流动 流动。 第一连续材料流包括稀释剂（例如去离子水），碱和酸中的一种或多种，​​并且第二连续材料流包括研磨颗粒溶液。 第一和第二材料流与大于约4400且小于约25000（例如，约74000至约25000）的雷诺数组合。 胶体分散体包括来自磨料颗粒溶液的稀释剂，碱，酸和磨料颗粒。

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