公开(公告)号：WO2007001485A2

公开(公告)日：2007-01-04

申请号：PCT/US2006/001589

申请日：2006-01-17

Applicant: PLANAR SOLUTIONS, LLC ,  MAHULIKAR, Deepak ,  WANG, Yuhu

Inventor： MAHULIKAR, Deepak ,  WANG, Yuhu

IPC: C01B33/20 ,  C01B33/141 ,  C09K3/14 ,  C01B33/12

CPC classification number: C09K3/1463 ,  C01B33/14 ,  C01B33/1435 ,  C01B33/22

Abstract: A method of manufacturing a colloidal silica dispersion, by dissolving a fumed silica in an aqueous solvent having an alkali metal hydroxide to produce an alkaline silicate solution; removing the alkali metal via ion exchange to produce a silicic acid solution; adjusting the temperature, concentration and pH of the silicic acid solution to values sufficient to initiate nucleation and particle growth at elevated temperatures; and cooling the silicic acid solution at a rate sufficient to produce the colloidal silica dispersion. The colloidal silica particles in the colloidal silica dispersion have a mean particle size about 2 nm to about 100 nm. Also provided is a method of chemical mechanical polishing a surface of a substrate by contacting the substrate and a composition having a plurality of colloidal silica particles according to the present invention and a medium for suspending the particles. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.

Abstract translation: 通过将热解法二氧化硅溶解在具有碱金属氢氧化物的水性溶剂中以制备碱性硅酸盐溶液来制备胶体二氧化硅分散体的方法; 通过离子交换除去碱金属，生成硅酸溶液; 将硅酸溶液的温度，浓度和pH调节到足以在升高的温度下引发成核和颗粒生长的值; 并以足以产生胶体二氧化硅分散体的速率冷却硅酸溶液。 胶体二氧化硅分散体中的胶体二氧化硅颗粒的平均粒径约为2nm至约100nm。 还提供了通过使基板和具有根据本发明的多个胶体二氧化硅颗粒的组合物和用于悬浮颗粒的介质的组合物进行化学机械抛光基板的表面的方法。 接触在足以使基材平坦化的温度下进行一段时间。

公开(公告)号：WO2007038321A2

公开(公告)日：2007-04-05

申请号：PCT/US2006/037065

申请日：2006-09-22

Applicant: PLANAR SOLUTIONS, LLC ,  MAHULIKAR, Deepak ,  WANG, Yuhu ,  DELBRIDGE, Ken, A. ,  MOYAERTS, Gert, R., M. ,  MOHSENI, Saeed, H. ,  KOONTZ, Nichole, R. ,  HU, Bin ,  WEN, Liqing

Inventor： MAHULIKAR, Deepak ,  WANG, Yuhu ,  DELBRIDGE, Ken, A. ,  MOYAERTS, Gert, R., M. ,  MOHSENI, Saeed, H. ,  KOONTZ, Nichole, R. ,  HU, Bin ,  WEN, Liqing

IPC: C23F1/14 ,  C09K13/00

CPC classification number: C23F3/04 ,  C01B33/1435 ,  C01B33/1485 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/80 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/31053 ,  H01L21/3212

Abstract: A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0.5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.

Abstract translation: 一种化学机械抛光基材表面的方法，包括以下步骤：使所述基材和包含多种胶态二氧化硅颗粒的组合物接触，所述胶态二氧化硅颗粒具有小于200ppb的各种痕量金属杂质，不包括钾 和钠具有小于2ppm的残留醇，并且其中痕量金属（不包括钾和钠）的累积浓度在约0.5至约5ppm的范围内; 和用于悬浮颗粒的介质; 其中所述组合物是超纯胶态二氧化硅分散体; 并且其中所述接触在足以使所述基板平面化的温度和时间段内进行。

公开(公告)号：WO2010091388A1

公开(公告)日：2010-08-12

申请号：PCT/US2010/023567

申请日：2010-02-09

Applicant: PLANAR SOLUTIONS, LLC ,  MOHSENI, Saeed, H. ,  MAHULIKAR, Deepak

Inventor： MOHSENI, Saeed, H. ,  MAHULIKAR, Deepak

IPC: B01D25/00

CPC classification number: B01D35/143 ,  B01D29/56 ,  B01D29/96 ,  B01D2201/265

Abstract: Fluid processing apparatuses and systems are disclosed. In some embodiments the fluid processing apparatuses include a movable enclosure (38), a plurality of filter housings (30) disposed substantially within the movable enclosure (38), and a stand (36) disposed within the enclosure (38). The filter housings (46a; 47a; 48a) are in fluid communication with one another. Each filter housing (46a; 47a; 48a) defines an elongate path and is configured to support a respective filter (49) along the elongate flow path to filter a substantially continuous flow of fluid. The stand (36) supports each filter housing (46a; 47a; 48a) such that the elongate flow path of each filter housing (46a; 47a; 48a) is substantially parallel to a vertical axis, wherein each filter housing (46a; 47a; 48a) is independently rotatable, relative to the stand (36).

Abstract translation: 公开了流体处理装置和系统。 在一些实施例中，流体处理设备包括可动外壳（38），基本上设置在可移动外壳（38）内的多个过滤器壳体（30）和设置在外壳（38）内的支架。 过滤器壳体（46a; 47a; 48a）彼此流体连通。 每个过滤器壳体（46a; 47a; 48a）限定细长路径并且构造成沿着细长流动路径支撑相应的过滤器（49）以过滤基本连续的流体流。 支架（36）支撑每个过滤器壳体（46a; 47a; 48a），使得每个过滤器壳体（46a; 47a; 48a）的细长流动路径基本上平行于垂直轴线，其中每个过滤器壳体（46a; 47a; 48a）相对于支架（36）独立地可旋转。

公开(公告)号：WO2006065274A2

公开(公告)日：2006-06-22

申请号：PCT/US2005/019074

申请日：2005-05-31

Applicant: PLANAR SOLUTIONS, LLC ,  MOYAERTS, Gert, R., M. ,  DELBRIDGE, Ken, A. ,  KOONTZ, Nicole, R. ,  MOHSENI, Saheed, H. ,  SAYLES, Gerome, J. ,  MAHULIKAR, Deepak

Inventor： MOYAERTS, Gert, R., M. ,  DELBRIDGE, Ken, A. ,  KOONTZ, Nicole, R. ,  MOHSENI, Saheed, H. ,  SAYLES, Gerome, J. ,  MAHULIKAR, Deepak

IPC: C09K3/14 ,  C09G1/02 ,  C09K13/00 ,  H01L21/461 ,  B44C1/22

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  C23F3/04 ,  H01L21/30625

Abstract: A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing having alkali metals Li, Na, K, Rb, Cs, Fr and a combination thereof, at a total alkali concentration of about 300 ppb or less, with the proviso that the concentration of Na, if present, is less than 200 ppb; and a medium for suspending the particles is provided. Also, provided are methods of chemical mechanical polishing which included a step of contacting a substrate and a composition according to the present invention. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.

Abstract translation: 一种用于化学机械抛光基底表面的组合物，其具有多个超高纯度溶胶凝胶加工的用于具有碱金属Li，Na，K，Rb，Cs，Fr及其组合的化学机械抛光的胶体二氧化硅颗粒，其总计 碱浓度为约300ppb以下，条件是Na（如果存在）的浓度小于200ppb; 并提供用于悬浮颗粒的介质。 此外，提供了化学机械抛光的方法，其包括使基材和根据本发明的组合物接触的步骤。 接触在足以使基材平坦化的温度下进行一段时间。

公开(公告)号：WO2013039750A1

公开(公告)日：2013-03-21

申请号：PCT/US2012/053781

申请日：2012-09-05

Applicant: PLANAR SOLUTIONS, LLC ,  MOHSENI, Saeed H. ,  GRAMM, Elizabeth K. ,  MAHULIKAR, Deepak

Inventor： MOHSENI, Saeed H. ,  GRAMM, Elizabeth K. ,  MAHULIKAR, Deepak

IPC: B01F3/12 ,  B01F3/18 ,  B01F5/00

CPC classification number: C09K3/1463 ,  C09G1/02

Abstract: A method of forming a colloidal dispersion includes providing a first continuous material flow, providing a second continuous material flow, combining the first and second continuous material flows, and moving a continuous flow of a colloidal dispersion in a direction downstream of the first and second continuous flows. The first continuous material flow includes one or more of a diluent (e.g., deionized water), a base, and an acid, and the second continuous material flow includes an abrasive particle solution. The first and second material flows are combined with a Reynolds number greater than about 4400 and less than about 25000 (e.g., about 74000 to about 25000). The colloidal dispersion includes the diluent, the base, the acid, and abrasive particles from the abrasive particle solution.

Abstract translation: 形成胶体分散体的方法包括提供第一连续材料流，提供第二连续材料流，组合第一和第二连续材料流，以及在第一和第二连续材料流的下游方向上移动胶体分散体的连续流动 流动。 第一连续材料流包括稀释剂（例如去离子水），碱和酸中的一种或多种，​​并且第二连续材料流包括研磨颗粒溶液。 第一和第二材料流与大于约4400且小于约25000（例如，约74000至约25000）的雷诺数组合。 胶体分散体包括来自磨料颗粒溶液的稀释剂，碱，酸和磨料颗粒。

公开(公告)号：WO2011047263A1

公开(公告)日：2011-04-21

申请号：PCT/US2010/052844

申请日：2010-10-15

Applicant: PLANAR SOLUTIONS, LLC ,  KIM, Hyungjun ,  WEN, Richard ,  HU, Bin ,  TANAKA, Minae ,  MAHULIKAR, Deepak

Inventor： KIM, Hyungjun ,  WEN, Richard ,  HU, Bin ,  TANAKA, Minae ,  MAHULIKAR, Deepak

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684

Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

Abstract translation: 本公开提供了用于化学机械抛光浆料的浓缩物，以及将该浓缩物稀释到使用点浆料的方法。 浓缩物包括研磨剂，络合剂和缓蚀剂，浓缩物用水和氧化剂稀释。 这些组分的存在量使得浓缩物可以以非常高的稀释比稀释，而不影响抛光性能。

公开(公告)号：WO2012030423A1

公开(公告)日：2012-03-08

申请号：PCT/US2011/040305

申请日：2011-06-14

Applicant: FUJIFILM PLANAR SOLUTIONS, LLC ,  MOHSENI, Saeed ,  MAHULIKAR, Deepak ,  GRAMM, Elizabeth

Inventor： MOHSENI, Saeed ,  MAHULIKAR, Deepak ,  GRAMM, Elizabeth

IPC: C02F5/08

CPC classification number: B08B3/08 ,  B01D41/04 ,  B08B3/14 ,  C11D3/43 ,  C11D7/50

Abstract: A method for removing particles or deposits from a surface having particles or deposits thereon. The method involves contacting a surface with a chemical composition sufficient to selectively dissolve and remove at least a portion of the particles or deposits from the surface. The chemical composition is compatible with the surface. This disclosure also relates to a system of specially designed equipment for removing particles or deposits from a surface having particles or deposits thereon. The disclosure is useful, for example, in cleaning porous surfaces, media for cartridge, pleated and membrane surfaces, and internal walls of tanks or filter housings.

Abstract translation: 从其上具有颗粒或沉积物的表面去除颗粒或沉积物的方法。 该方法包括将表面与足以选择性地溶解并从表面去除至少一部分颗粒或沉积物的化学组合物接触。 化学成分与表面相容。 本公开还涉及一种用于从其上具有颗粒或沉积物的表面去除颗粒或沉积物的专门设计的设备的系统。 本公开可用于例如清洁多孔表面，用于筒的介质，褶皱和膜表面以及罐或过滤器壳体的内壁。

公开(公告)号：WO2009020625A1

公开(公告)日：2009-02-12

申请号：PCT/US2008/009459

申请日：2008-08-07

Applicant: PLANAR SOLUTIONS, LLC ,  HU, Bin ,  WEN, Richard ,  MAHULIKAR, Deepak

Inventor： HU, Bin ,  WEN, Richard ,  MAHULIKAR, Deepak

IPC: H01L21/02 ,  C09G1/00

CPC classification number: C09G1/02 ,  C09G1/16 ,  H01L21/3212

Abstract: A water-soluble polymer is effective as a removal rate enhancer in a chemical mechanical polishing slurry to polish copper on semiconductor wafers or other copper laid structures, while keeping the etching rate low. The slurry may also include soft particles and certain metal chelating agents, or combinations thereof. The slurry can also comprise an abrasive particle, an organic acid, and an oxidizer.

Abstract translation: 水溶性聚合物在化学机械抛光浆料中作为去除速率增强剂是有效的，以在半导体晶片或其它铜敷设结构上抛光铜，同时保持蚀刻速率较低。 浆料还可以包括软颗粒和某些金属螯合剂，或其组合。 浆料还可以包含磨料颗粒，有机酸和氧化剂。

公开(公告)号：WO2012003082A3

公开(公告)日：2012-01-05

申请号：PCT/US2011/039902

申请日：2011-06-10

Applicant: FUJIFILM PLANAR SOLUTIONS ,  HU, Bin ,  SINGH, Abhishek ,  MOYAERTS, Gert ,  MAHULIKAR, Deepak ,  WEN, Richard

Inventor： HU, Bin ,  SINGH, Abhishek ,  MOYAERTS, Gert ,  MAHULIKAR, Deepak ,  WEN, Richard

IPC: C09K13/00

Abstract: A highly dilutable chemical mechanical polishing concentrate comprises an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2 - 3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates. A transistor is polished with the slurry, wherein the slurry comprises an abrasive, an acid, a stabilizer, and water. The transistor comprises a polysilicon gate, a hardmask over the polysilicon gate, an etch stop layer over the hardmask, and a dielectric layer over the etch stop layer. The polishing concentrate is used to polish the dielectric layer, the etch stop layer, the hardmask, and the polysilicon gate with the slurry. At least one of the layers is silicon carbide and at least one of the layers is a silica material.

公开(公告)号：WO2018071285A1

公开(公告)日：2018-04-19

申请号：PCT/US2017/055469

申请日：2017-10-06

Applicant: FUJIFILM PLANAR SOLUTIONS, LLC

Inventor： MAHULIKAR, Deepak

IPC: C23F1/10 ,  C09G1/02

Abstract: CMP compositions providing stable and robust polishing performance at elevated pad or wafer surface temperatures are disclosed, as well as methods for use thereof. The compositions of the disclosure include reaction rate optimizing (RRO) compounds that optimize various chemical reactions occurring in the slurry chemistry at elevated polishing temperatures on the wafer surface, such that removal rate variation within an individual wafer is

Abstract translation: 公开了在提高的衬垫或晶片表面温度下提供稳定且坚固的抛光性能的CMP组合物及其使用方法。 本公开的组合物包括反应速率优化（RRO）化合物，其优化晶片表面上升高的抛光温度下浆料化学中发生的各种化学反应，使得单个晶片内的去除速率变化< 10％。