公开(公告)号：WO2010118293A3

公开(公告)日：2010-10-14

申请号：PCT/US2010/030492

申请日：2010-04-09

Applicant: APPLIED MATERIALS, INC. ,  ISHIKAWA, Tetsuya ,  QUACH, David, H. ,  CHANG, Anzhong ,  KRYLIOUK, Olga ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

Inventor： ISHIKAWA, Tetsuya ,  QUACH, David, H. ,  CHANG, Anzhong ,  KRYLIOUK, Olga ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

IPC: H01L21/20 ,  H01L33/02

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

公开(公告)号：WO2010118295A3

公开(公告)日：2011-01-20

申请号：PCT/US2010030496

申请日：2010-04-09

Applicant: APPLIED MATERIALS INC ,  ISHIKAWA TETSUYA ,  QUACH DAVID H ,  CHANG ANZHONG ,  KRYLIOUK OLGA ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： ISHIKAWA TETSUYA ,  QUACH DAVID H ,  CHANG ANZHONG ,  KRYLIOUK OLGA ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L21/20

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

公开(公告)号：WO2010129292A3

公开(公告)日：2011-02-17

申请号：PCT/US2010032597

申请日：2010-04-27

Applicant: APPLIED MATERIALS INC ,  NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L33/00

CPC classification number: H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract translation: 本发明总体上提供了用于形成LED结构的装置和方法。 本发明的一个实施方案提供了一种制备复合氮化物结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二III族元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层 第二层通过MOCVD过程。

公开(公告)号：WO2010129292A4

公开(公告)日：2011-03-31

申请号：PCT/US2010032597

申请日：2010-04-27

Applicant: APPLIED MATERIALS INC ,  NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L33/00

CPC classification number: H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract translation: 本发明通常提供用于形成LED结构的装置和方法。 本发明的一个实施例提供了一种用于制造化合物氮化物结构的方法，包括：通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素和氮的第一层或氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中的第一层上形成包括第二III族元素和氮的第二层，并且形成包含第三III族元素和氮上的第三层 第二层采用MOCVD工艺。

公开(公告)号：WO2010129292A2

公开(公告)日：2010-11-11

申请号：PCT/US2010/032597

申请日：2010-04-27

Applicant: APPLIED MATERIALS, INC. ,  NIJHAWAN, Sandeep ,  BURROWS, Brian, H. ,  ISHIKAWA, Tetsuya ,  KRYLIOUK, Olga ,  VASUDEV, Anand ,  SU, Jie ,  QUACH, David, H. ,  CHANG, Anzhong ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

Inventor： NIJHAWAN, Sandeep ,  BURROWS, Brian, H. ,  ISHIKAWA, Tetsuya ,  KRYLIOUK, Olga ,  VASUDEV, Anand ,  SU, Jie ,  QUACH, David, H. ,  CHANG, Anzhong ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

IPC: H01L33/00

CPC classification number: H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract translation: 本发明总体上提供了用于形成LED结构的装置和方法。 本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层 第二层通过MOCVD过程。

公开(公告)号：WO2010118295A2

公开(公告)日：2010-10-14

申请号：PCT/US2010/030496

申请日：2010-04-09

Applicant: APPLIED MATERIALS, INC. ,  ISHIKAWA, Tetsuya ,  QUACH, David, H. ,  CHANG, Anzhong ,  KRYLIOUK, Olga ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

Inventor： ISHIKAWA, Tetsuya ,  QUACH, David, H. ,  CHANG, Anzhong ,  KRYLIOUK, Olga ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

IPC: H01L21/20

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

公开(公告)号：WO2010118293A2

公开(公告)日：2010-10-14

申请号：PCT/US2010030492

申请日：2010-04-09

Applicant: APPLIED MATERIALS INC ,  ISHIKAWA TETSUYA ,  QUACH DAVID H ,  CHANG ANZHONG ,  KRYLIOUK OLGA ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： ISHIKAWA TETSUYA ,  QUACH DAVID H ,  CHANG ANZHONG ,  KRYLIOUK OLGA ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L21/20 ,  H01L33/02

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。