公开(公告)号：WO2019096375A1

公开(公告)日：2019-05-23

申请号：PCT/EP2017/079288

申请日：2017-11-15

Applicant: APPLIED MATERIALS, INC. ,  SCHNAPPENBERGER, Frank ,  BUSCHBECK, Wolfgang ,  HEIN, Stefan

Inventor： SCHNAPPENBERGER, Frank ,  BUSCHBECK, Wolfgang ,  HEIN, Stefan

IPC: C23C14/54 ,  C23C14/56 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  G05D23/27 ,  H01K1/32 ,  H01L21/67

CPC classification number: C23C16/46 ,  C23C14/541 ,  C23C14/562 ,  C23C16/481 ,  C23C16/545 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67253

Abstract: According to a first aspect, the present disclosure provides an apparatus for heat treatment of a substrate comprising at least one heating element, and at least one shield, wherein the at least one shield is moveable between a first position and a second position between the substrate and the at least one heating element, and the at least one shield comprises at least one reflective surface. According to a further aspect, the present disclosure provides an apparatus for transporting a flexible substrate comprising the apparatus for heat treatment of a substrate according to the first aspect, a substrate transport controller, and a sensor, wherein the substrate is transported past the apparatus for heat treatment of a substrate. According to a further aspect, the present disclosure provides a method for heat treatment of a substrate comprising emitting radiation towards the substrate, and temporarily reflecting the radiation to restrict the heating of the substrate.

公开(公告)号：WO2018217220A1

公开(公告)日：2018-11-29

申请号：PCT/US2017/043478

申请日：2017-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： HOWELLS, Samuel C.

IPC: H01L21/67 ,  H01L21/66

CPC classification number: G01J5/0828 ,  G01J3/18 ,  G01J5/0007 ,  G01J5/041 ,  H01L21/67115 ,  H01L21/67248

Abstract: Apparatus and methods of processing substrates include a detector manifold to detect radiation from proximate a processing area in a chamber body; a radiation detector optically coupled to the detector manifold; and a spectral multi-notch filter. Apparatus and methods of processing substrates include detecting transmitted radiation from an emitting surface of a substrate in a chamber body; conveying at least one spectral band of the detected radiation to a photodetector; and analyzing the detected radiation in the at least one spectral band to determine an inferred temperature of the substrate.

公开(公告)号：WO2017191425A1

公开(公告)日：2017-11-09

申请号：PCT/GB2016/051305

申请日：2016-05-06

Applicant: PRECISION POLYMER ENGINEERING LIMITED

Inventor： GULCUR, Murat ,  THORNTON, Christopher Julian ,  HAWORTH, Paul Andrew ,  KERWIN, John Edward

IPC: H01L21/67 ,  C23C16/44 ,  F16J15/12

CPC classification number: F16J15/128 ,  C09D11/037 ,  C09D11/101 ,  C09D11/107 ,  C23C16/4409 ,  F16J15/102 ,  H01L21/67115 ,  H01L21/67126

Abstract: An elastomeric seal for use in semiconductor manufacturing apparatus comprising an ink on at least a portion of the upper surface thereof, wherein the ink comprises a barrier material, the barrier material being operable to prevent or reduce degradation of the elastomeric seal from ultraviolet (UV) radiation.

Abstract translation: 一种用于半导体制造设备的弹性密封件，其包括在其上表面的至少一部分上的油墨，其中所述油墨包括阻隔材料，所述阻隔材料可操作以防止或减少 来自紫外（UV）辐射的弹性密封。

公开(公告)号：WO2017163409A1

公开(公告)日：2017-09-28

申请号：PCT/JP2016/059675

申请日：2016-03-25

Applicant: 株式会社日立国際電気

Inventor： 佐藤　崇之 ,  松浦　直哉

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/205

CPC classification number: H01L21/68757 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32724 ,  H01J2237/24564 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68785

Abstract: [課題]　 熱膨張により変形したリフレクタが、石英で形成されたサセプタに接触することによりサセプタを破損させることを防止する技術を提供する。 [解決手段]　 基板が上部に載置される、石英で構成された上側サセプタと、石英で構成された下側サセプタと、面状に形成された金属により構成された熱を反射するリフレクタと、を有し、上側サセプタの下面と下側サセプタの上面はその間にリフレクタを挟むように接着されており、下側サセプタの上面にはリフレクタを収容する第１の凹部が形成されており、上側サセプタの下面であって第１の凹部に対向する部分は表面を粗面化する加工が施されている基板支持台を提供する。

Abstract translation:

[问题]通过反射器的热膨胀而变形，以提供用于防止由石英制成的基座接触损坏基座的技术。 [解决方案]衬底被放置在上面，和用于反射由石英制成的一高位感受器，一个反射器，以及由石英制成的下部基座，其由被以平面形状形成的金属的热量， 具有下表面和下部基座上基座的上表面接合，以便夹在其间反射，下部基座的上表面形成有第一凹部形成有用于容纳所述反射器，上基座 并且处理与衬底支撑件的下表面上的第一凹入部分相对的部分以使表面变粗糙。

公开(公告)号：WO2017136222A1

公开(公告)日：2017-08-10

申请号：PCT/US2017/015211

申请日：2017-01-27

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： TIMANS, Paul

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67248

Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate temperature, the process can include heating the substrate to a pre-bake temperature for a soak period.

Abstract translation: 提供毫秒退火系统的预热过程。 在一个示例实施方式中，热处理工艺可以包括：在毫秒退火系统的处理室中的晶片支撑件上接收衬底; 将衬底加热到​​中间温度; 并使用毫秒加热闪光加热衬底。 在将基材加热至中间温度之前，该方法可包括将基材加热至预烘温度以保持一段时间。

公开(公告)号：WO2017116740A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066882

申请日：2016-12-15

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： LIEBERER, Markus ,  SEIFERT, Christian ,  BREMENSDORFER, Rolf

IPC: H05B31/06 ,  H05B31/24

CPC classification number: H01J61/0732 ,  H01J61/526 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/6719 ,  H05B3/0047 ,  H05B3/03 ,  H05H1/48 ,  H05H2001/488

Abstract: Electrode tips for arc lamps for use in, for instance, a millisecond anneal system are provided. In one example implementation, an electrode for an arc lamp can have an electrode tip. The surface of the electrode tip can have one or more grooves to reduce the transportation of molten material across the surface of the electrode tip. The electrode can include an interface between the electrode tip and a heat sink. The interface can have a shape designed to have a desired lateral temperature distribution across the surface of the electrode tip.

Abstract translation: 提供用于例如毫秒退火系统中的弧光灯的电极尖端。 在一个示例实施方式中，用于弧光灯的电极可以具有电极尖端。 电极头的表面可具有一个或多个凹槽以减少熔融材料在电极头的表面上的传送。 电极可以包括电极尖端和散热器之间的界面。 界面可以具有被设计为在电极尖端的表面上具有期望的横向温度分布的形状。

公开(公告)号：WO2017116738A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066878

申请日：2016-12-15

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： JANISCH, Joachim ,  MUELLER, Manuel

IPC: H01L21/67 ,  H01L21/324

CPC classification number: H01L21/67248 ,  F27D25/00 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H05B3/0047

Abstract: Systems and methods for reducing contamination on reflective mirrors disposed on chamber walls in a millisecond anneal system are provided. In one example implementation, the reflective mirrors can be heated by one or more of (1) heating the fluid in the closed fluid system for regulating the temperature of the reflective mirrors; (2) electrical cartridge heater(s) or heater ribbon(s) attached to the reflective mirrors; and/or (3) use of lamp light inside the chamber.

Abstract translation: 提供了用于减少在毫秒退火系统中设置在室壁上的反射镜上的污染的系统和方法。 在一个示例实施方式中，可以通过以下方式中的一个或多个来加热反射镜：（1）加热封闭流体系统中的流体以调节反射镜的温度; （2）附接到反射镜的电加热器盒或加热器带; 和/或（3）在室内使用灯光。

公开(公告)号：WO2017116709A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066563

申请日：2016-12-14

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： CIBERE, Joseph

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67288 ,  G01R31/2831 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67248

Abstract: Systems and methods for substrate support in a millisecond anneal system are provided. In one example implementation, a millisecond anneal system includes a processing chamber having a wafer support plate. A plurality of support pins can extend from the wafer support plate. The support pins can be configured to support a substrate. At least one of the support pins can have a spherical surface profile to accommodate a varying angle of a substrate surface normal at the point of contact with the substrate. Other example aspects of the present disclosure are directed to methods for estimating, for instance, local contact stress at the point of contact with the support pin.

Abstract translation: 提供了毫秒退火系统中衬底支撑的系统和方法。 在一个示例实施方式中，毫秒退火系统包括具有晶片支撑板的处理室。 多个支撑销可以从晶片支撑板延伸。 支撑销可以被配置为支撑衬底。 至少一个支撑销可以具有球形表面轮廓以适应在与衬底接触点处法向的衬底表面的变化角度。 本公开的其他示例方面涉及用于估计例如与支撑销接触的点处的局部接触应力的方法。

公开(公告)号：WO2017116685A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066341

申请日：2016-12-13

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： LIEBERER, Markus ,  PFAHLER, Christian ,  HAGEDORN, Markus ,  VANABBEMA, Michael ,  COSCEEV, Alexandr

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L22/20 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/68757

Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.

Abstract translation: 提供毫秒退火系统的预热过程。 在一个示例实施方式中，预热过程可以包括：在毫秒退火系统的处理室中的晶片支撑板上接收衬底; 使用温度传感器获得所述晶片支撑板的一个或多个温度测量结果; 以及至少部分基于晶片支撑板的温度应用预热配方来加热晶片支撑板。 在一个示例实施方式中，预热过程可以包括：在毫秒退火系统中从具有晶片支撑板的视场的温度传感器获得一个或多个温度测量结果; 以及至少部分地基于所述一个或多个温度测量，施加脉冲式预加热配方以在所述毫秒退火系统中加热所述晶片支撑板。

公开(公告)号：WO2017083037A1

公开(公告)日：2017-05-18

申请号：PCT/US2016/056220

申请日：2016-10-10

Applicant: APPLIED MATERIALS, INC.

Inventor： RANISH, Joseph M. ,  HUNTER, Aaron Muir ,  SRINIVASAN, Swaminathan T.

IPC: H01L21/02 ,  H01L21/265 ,  H01L21/027 ,  H01L21/324

CPC classification number: H01L23/562 ,  H01J37/32009 ,  H01J37/32715 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/02321 ,  H01L21/0274 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31051 ,  H01L21/31122 ,  H01L21/31155 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67248 ,  H01L21/67288 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68792 ,  H01L22/12 ,  H01L22/20 ,  H01L29/32

Abstract: Embodiments disclosed herein generally relate to methods and apparatus for processing of the bottom surface of a substrate to counteract thermal stresses thereon. Correcting strains are applied to the bottom surface of the substrate which compensate for undesirable strains and distortions on the top surface of the substrate. Specifically designed films may be formed on the back side of the substrate by any combination of deposition, implant, thermal treatment, and etching to create strains that compensate for unwanted distortions of the substrate. Localized strains may be introduced by locally altering the hydrogen content of a silicon nitride film or a carbon film. Structures may be formed by printing, lithography, or self-assembly techniques. Treatment of the layers of film is determined by the stress map desired and includes annealing, implanting, melting, or other thermal treatments.

Abstract translation: 这里公开的实施例大体涉及用于处理衬底的底表面以抵消其上的热应力的方法和装置。 校正应变被施加到基底的底表面上，以补偿基底顶表面上的不希望的应变和变形。 通过沉积，注入，热处理和蚀刻的任何组合可以在衬底的背面上形成特别设计的膜，以产生补偿衬底的不希望的变形的应变。 局部应变可以通过局部地改变氮化硅膜或碳膜的氢含量来引入。 结构可以通过印刷，光刻或自组装技术形成。 薄膜层的处理由所需的应力图决定，包括退火，注入，熔化或其他热处理。