公开(公告)号：WO2012041958A3

公开(公告)日：2012-08-02

申请号：PCT/EP2011066979

申请日：2011-09-29

Applicant: ABB TECHNOLOGY AG ,  RAHIMO MUNAF ,  ARNOLD MARTIN ,  STIASNY THOMAS

Inventor： RAHIMO MUNAF ,  ARNOLD MARTIN ,  STIASNY THOMAS

IPC: H01L29/74

CPC classification number: H01L29/747 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7416 ,  H01L29/7428 ,  H01L29/744

Abstract: A reverse-conducting power semiconductor device (1) with a wafer (10) having a first main side (11) and a second main side (15), which is arranged parallel to the first main side (11), is provided. The device comprises a plurality of diode cells (96) and a plurality of IGCT cells (91), wherein each IGCT cell comprises layers in the following order between the first and second main side (11, 15): - a cathode electrode (2), - a first cathode layer (4) of the first conductivity type, - a base layer (6) of the second conductivity type, - a drift layer (3) of the first conductivity type, - a buffer layer (8) of the first conductivity type, - a first anode layer (5) of the second conductivity type, and - a first anode electrode (25). Each IGCT cell (91) further comprises a gate electrode (7), which is arranged lateral to the first cathode layer (4) and separated from it by the base layer (6). Each diode cell (96) comprises a second anode electrode (28) on the first main side (11), which is in contact to a second anode layer (55) of the second conductivity type, which second anode layer (55) is separated from the base layer (6) by the drift layer (3), and a second cathode layer (45) of the first conductivity type on the second main side (15), which is arranged alternating to the first anode layer (5). The device comprises at least one mixed part (99), in which the second anode layers (55) of the diode cells (96) alternate with the first cathode layers (4) of the IGCT cells (91).

Abstract translation: 提供具有晶片（10）的反向导电功率半导体器件（1），晶片（10）具有平行于第一主侧（11）布置的第一主侧（11）和第二主侧（15）。 该装置包括多个二极管单元（96）和多个IGCT单元（91），其中每个IGCT单元在第一和第二主侧（11,15）之间包括以下顺序的层： - 阴极电极（2 ）， - 第一导电类型的第一阴极层（4）， - 第二导电类型的基层（6）， - 第一导电类型的漂移层（3）， - 缓冲层 第一导电类型， - 第二导电类型的第一阳极层（5），以及 - 第一阳极电极（25）。 每个IGCT单元（91）还包括栅电极（7），该栅电极布置在第一阴极层（4）的侧面并且通过基层（6）与其隔开。 每个二极管单元（96）包括在第一主侧（11）上的第二阳极电极（28），其与第二导电类型的第二阳极层（55）接触，该第二阳极层（55）被分离 从所述基层（6）通过所述漂移层（3）和在与所述第一阳极层（5）交替布置的所述第二主侧（15）上的所述第一导电类型的第二阴极层（45）。 该器件包括至少一个混合部分（99），其中二极管单元（96）的第二阳极层（55）与IGCT单元（91）的第一阴极层（4）交替。

公开(公告)号：WO2009074453A2

公开(公告)日：2009-06-18

申请号：PCT/EP2008/066197

申请日：2008-11-26

Applicant: ABB RESEARCH LTD ,  COTTET, Didier ,  STIASNY, Thomas ,  WIKSTROEM, Tobias

Inventor： COTTET, Didier ,  STIASNY, Thomas ,  WIKSTROEM, Tobias

IPC: H01L23/48 ,  H01L23/498

CPC classification number: H01L23/051 ,  H01L2924/0002 ,  H01L2924/13023 ,  H01L2924/13055 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/00

Abstract: The present invention provides a semiconductor switching device comprising a substrate having deposited thereon a cathode, an anode and a gate of the semiconductor switching device, and a connection means for electrically connecting the cathode in the gate of the semiconductor switching device to an external circuit unit. The connection means comprises a cathode-gate connection unit having a coaxial structure including a gate conductor and a cathode conductor for electrically connecting the cathode and the gate of the semiconductor switching device to the external circuit unit.

Abstract translation: 本发明提供了一种半导体开关器件，包括其上沉积有阴极，阳极和半导体开关器件的栅极的衬底，以及用于电连接所述半导体开关器件的栅极中的阴极的连接装置 半导体开关器件连接到外部电路单元。 连接装置包括具有同轴结构的阴极 - 栅极连接单元，该同轴结构包括用于将半导体开关器件的阴极和栅极电连接到外部电路单元的栅极导体和阴极导体。

公开(公告)号：WO2012041958A2

公开(公告)日：2012-04-05

申请号：PCT/EP2011/066979

申请日：2011-09-29

Applicant: ABB TECHNOLOGY AG ,  RAHIMO, Munaf ,  ARNOLD, Martin ,  STIASNY, Thomas

Inventor： RAHIMO, Munaf ,  ARNOLD, Martin ,  STIASNY, Thomas

IPC: H01L29/423 ,  H01L29/10 ,  H01L27/102 ,  H01L27/08 ,  H01L29/74

CPC classification number: H01L29/747 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7416 ,  H01L29/7428 ,  H01L29/744

Abstract: A reverse-conducting power semiconductor device (1) with a wafer (10) having a first main side (11) and a second main side (15), which is arranged parallel to the first main side (11), is provided. The device comprises a plurality of diode cells (96) and a plurality of IGCT cells (91), wherein each IGCT cell comprises layers in the following order between the first and second main side (11, 15): - a cathode electrode (2), - a first cathode layer (4) of the first conductivity type, - a base layer (6) of the second conductivity type, - a drift layer (3) of the first conductivity type, - a buffer layer (8) of the first conductivity type, - a first anode layer (5) of the second conductivity type, and - a first anode electrode (25). Each IGCT cell (91) further comprises a gate electrode (7), which is arranged lateral to the first cathode layer (4) and separated from it by the base layer (6). Each diode cell (96) comprises a second anode electrode (28) on the first main side (11), which is in contact to a second anode layer (55) of the second conductivity type, which second anode layer (55) is separated from the base layer (6) by the drift layer (3), and a second cathode layer (45) of the first conductivity type on the second main side (15), which is arranged alternating to the first anode layer (5). The device comprises at least one mixed part (99), in which the second anode layers (55) of the diode cells (96) alternate with the first cathode layers (4) of the IGCT cells (91).

Abstract translation: 提供了具有与第一主侧（11）平行布置的具有第一主侧（11）和第二主侧（15）的晶片（10）的反向导电功率半导体装置（1）。 该器件包括多个二极管单元（96）和多个IGCT单元（91），其中每个IGCT单元包括在第一和第二主侧（11,15）之间的以下顺序的层： - 阴极电极（2 ）， - 第一导电类型的第一阴极层（4）， - 第二导电类型的基极层（6）， - 第一导电类型的漂移层（3）， - 缓冲层（8） 第一导电类型， - 第二导电类型的第一阳极层（5）和 - 第一阳极电极（25）。 每个IGCT单元（91）还包括栅电极（7），其被布置在第一阴极层（4）的侧面并与基底层（6）分离。 每个二极管单元（96）包括在第一主侧（11）上的与第二导电类型的第二阳极层（55）接触的第二阳极电极（28），该第二阳极层（55）被分离 从基底层（6）通过漂移层（3）和与第一阳极层（5）交替排列的第二导电类型的第二阴极层（45）。 该器件包括至少一个混合部分（99），其中二极管单元（96）的第二阳极层（55）与IGCT电池（91）的第一阴极层（4）交替。

公开(公告)号：WO2009074453A3

公开(公告)日：2009-09-17

申请号：PCT/EP2008066197

申请日：2008-11-26

Applicant: ABB RESEARCH LTD ,  COTTET DIDIER ,  STIASNY THOMAS ,  WIKSTROEM TOBIAS

Inventor： COTTET DIDIER ,  STIASNY THOMAS ,  WIKSTROEM TOBIAS

IPC: H01L23/48 ,  H01L23/498

CPC classification number: H01L23/051 ,  H01L2924/0002 ,  H01L2924/13023 ,  H01L2924/13055 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/00

Abstract: The present invention provides a semiconductor switching device comprising a substrate having deposited thereon a cathode, an anode and a gate of the semiconductor switching device, and a connection means for electrically connecting the cathode in the gate of the semiconductor switching device to an external circuit unit. The connection means comprises a cathode-gate connection unit having a coaxial structure including a gate conductor and a cathode conductor for electrically connecting the cathode and the gate of the semiconductor switching device to the external circuit unit.

Abstract translation: 本发明提供了一种半导体开关器件，包括在其上沉积有半导体开关器件的阴极，阳极和栅极的衬底，以及用于将半导体开关器件的栅极中的阴极电连接到外部电路单元的连接装置 。 连接装置包括具有同轴结构的阴极 - 栅极连接单元，其包括用于将半导体开关装置的阴极和栅极电连接到外部电路单元的栅极导体和阴极导体。