公开(公告)号：WO2004038321A3

公开(公告)日：2005-05-06

申请号：PCT/IL0300888

申请日：2003-10-28

Applicant: TEVET PROCESS CONTROL TECHNOLO ,  DU-NOUR OFER ,  RUBINSTEIN VLADIMIR

Inventor： DU-NOUR OFER ,  RUBINSTEIN VLADIMIR

IPC: G01B11/06 ,  G01B11/28

CPC classification number: G01B11/0625

Abstract: Thickness measurement apparatus for measuring layer thicknesses on patterned areas of a semiconductor wafer, comprises: a spectrum analyzer for obtaining reflection data taken from a patterned area and obtaining therefrom a frequency spectrum, a peak detector for searching the spectrum to find peak frequencies within said spectrum, the search being restricted to regions corresponding to peak frequencies found in an earlier learning stage, a frequency filter (56), associated with the peak detector, for filtering the spectrum about said peak frequencies, and a maximum likelihood fitter (60) for using parameters obtained in the learning stage to carry out maximum likelihood fitting of said filtered spectrum to obtain the desired layer thicknesses. By carrying out maximum likelihood fitting (60) using parameters obtained beforehand in a high resolution non-real time learning stage, it is possible to provide high resolution results in real time.

Abstract translation: 用于测量半导体晶片的图案区域上的层厚度的厚度测量装置包括：频谱分析器，用于获得从图案化区域获取的反射数据并从中获得频谱;峰值检测器，用于搜索光谱以在所述光谱内找到峰值频率 搜索限于对应于早期学习阶段中发现的峰值频率的区域，与峰值检测器相关联的用于滤波关于所述峰值频率的频谱的频率滤波器（56）和用于使用的最大似然钳位器（60） 在学习阶段获得的参数以执行所述滤波光谱的最大似然拟合以获得期望的层厚度。 通过使用在高分辨率非实时学习阶段中预先获得的参数进行最大似然拟合（60），可以实时提供高分辨率结果。

公开(公告)号：WO03005412A9

公开(公告)日：2004-04-15

申请号：PCT/IL0200527

申请日：2002-06-27

Applicant: TEVET PROCESS CONTROL TECHNOLO ,  DU-NOUR OFER

Inventor： DU-NOUR OFER

IPC: G01J3/36 ,  G01N21/41 ,  G01N21/45 ,  G01N21/55 ,  H01L21/02 ,  H01L21/66 ,  G01B11/06

CPC classification number: G01N21/55 ,  G01B11/0625 ,  G01B11/0683 ,  G05B19/4184 ,  G05B2219/31442 ,  G05B2219/31444 ,  G05B2219/32197 ,  G05B2219/32243 ,  G05B2219/37224 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/14 ,  Y02P90/22

Abstract: A production line tool comprising an illumination source (30), photo detector (34), and signal analysis means (40) for determining the properties of a multilayer wafer in a manufacturing process where one of the properties measured is the thickness of the layers of the wafer.

Abstract translation: 一种生产线工具，包括照明源（30），光电检测器（34）和用于在制造过程中确定多层晶片的性质的信号分析装置（40），其中所测量的一个性质是层的厚度 晶圆。