公开(公告)号：WO2007024332A3

公开(公告)日：2007-03-01

申请号：PCT/US2006/025174

申请日：2006-06-27

Applicant: ACCENT OPTICAL TECHNOLOGIES, INC. ,  VAGOS, Pedro

Inventor： VAGOS, Pedro

IPC: H01L21/336

Abstract: Methods and apparatus for assessing a constituent in a semiconductor substrate. Several embodiments of the invention are directed toward non-contact methods and systems for identifying an atom specie of a dopant implanted into the semiconductor substrate using techniques that do not mechanically contact the substrate with electrical leads or other types of mechanical measuring instruments. For example, one embodiment of a non-contact method of assessing a constituent in a semiconductor substrate in accordance with the invention comprises obtaining an actual reflectance spectrum of infrared radiation reflected from the semiconductor substrate, and ascertaining a plasma frequency value (ω p ) and a collision frequency value (γ) for the semiconductor substrate based on the actual reflectance spectrum. This method can further include identifying a dopant type based on a relationship between dopant types and (a) plasma frequency values and (b) collision frequency values.

公开(公告)号：WO2012096772A1

公开(公告)日：2012-07-19

申请号：PCT/US2011/066535

申请日：2011-12-21

Applicant: NANOMETRICS INCORPORATED ,  VAGOS, Pedro ,  ROVIRA, Pablo I.

Inventor： VAGOS, Pedro ,  ROVIRA, Pablo I.

IPC: G01N21/21 ,  G01N21/23 ,  G01J3/447 ,  G01J4/04

CPC classification number: G01N21/211 ,  G01N21/23

Abstract: An optical metrology device (100) produces a broadband beam of light (104) that is incident on and reflected by a sample (108) and introduces multiple variations in the polarization state of the beam of light induced by an optical chiral element (118). Using the detected light, the Muller matrix or partial Mueller matrix for the sample is determined, which is then used to determine a characteristic of the sample. For example, simulated spectra for a Mueller matrix for a model is fit to the measured spectra for the Mueller matrix of the sample by adjusting the parameters of the model until an acceptable fit between the simulated spectra and measured spectra from the Mueller matrices is produced. The varied parameters are then used as the sample parameters of interested, which can be reported, such as by storing in memory or displaying.

Abstract translation: 光学测量装置（100）产生入射到样本（108）并由样本（108）反射的宽带光束（104），并引入由光学手性元件（118）感应的光束的偏振状态的多个变化， 。 使用检测到的光，确定样品的Muller矩阵或部分Mueller矩阵，然后将其用于确定样品的特性。 例如，用于模型的Mueller矩阵的模拟光谱适用于样本的Mueller矩阵的测量光谱，通过调整模型的参数，直到产生来自Mueller矩阵的模拟光谱和测量光谱之间的可接受的拟合。 然后将各种参数用作感兴趣的样本参数，可以通过存储或显示来报告。

公开(公告)号：WO2007024332A2

公开(公告)日：2007-03-01

申请号：PCT/US2006025174

申请日：2006-06-27

Applicant: ACCENT OPTICAL TECH INC ,  VAGOS PEDRO

Inventor： VAGOS PEDRO

IPC: H01L21/336

CPC classification number: H01L21/26513 ,  H01L22/14

Abstract: Methods and apparatus for assessing a constituent in a semiconductor substrate. Several embodiments of the invention are directed toward non-contact methods and systems for identifying an atom specie of a dopant implanted into the semiconductor substrate using techniques that do not mechanically contact the substrate with electrical leads or other types of mechanical measuring instruments. For example, one embodiment of a non-contact method of assessing a constituent in a semiconductor substrate in accordance with the invention comprises obtaining an actual reflectance spectrum of infrared radiation reflected from the semiconductor substrate, and ascertaining a plasma frequency value (? p ) and a collision frequency value (?) for the semiconductor substrate based on the actual reflectance spectrum. This method can further include identifying a dopant type based on a relationship between dopant types and (a) plasma frequency values and (b) collision frequency values.

Abstract translation: 用于评估半导体衬底中的组分的方法和装置。 本发明的几个实施例涉及使用不与电引线或其他类型的机械测量仪器机械接触衬底的技术来识别注入到半导体衬底中的掺杂剂的原子物种的非接触方法和系统。 例如，根据本发明的评估半导体衬底中的成分的非接触方法的一个实施例包括获得从半导体衬底反射的红外辐射的实际反射光谱，并确定等离子体频率值（α< 基于实际反射光谱的半导体衬底的碰撞频率值（θ）。 该方法还可以包括基于掺杂剂类型与（a）等离子体频率值和（b）碰撞频率值之间的关系识别掺杂剂类型。