公开(公告)号：WO2006091840B1

公开(公告)日：2006-11-16

申请号：PCT/US2006006643

申请日：2006-02-24

Applicant: ACCENT OPTICAL TECH INC ,  RAYMOND CHRIS ,  HUMEL STEVE

Inventor： RAYMOND CHRIS ,  HUMEL STEVE

IPC: G01B11/06 ,  G01N21/47

CPC classification number: G01B11/0616 ,  G01B11/24 ,  G01B11/30 ,  G01N21/21 ,  G01N21/274 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  G01N23/2251 ,  G01N2021/4792 ,  G03F7/70625

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The microstructures are illuminated with two beams of different ultra-violet wavelengths.

Abstract translation: 散射仪和使用散射测量法来确定周期性微结构，伪周期性结构以及具有小至100nm或更小的特征尺寸的其他非常小的结构的若干参数的方法。 本发明的几个具体实施例在半导体工业中特别有用，以确定在微处理器，存储器件和其他半导体器件中形成的特征的宽度，深度，线边缘粗糙度，壁角度，膜厚度以及许多其他参数。 微结构用两束不同的紫外波长的光照射。

公开(公告)号：WO2006091783B1

公开(公告)日：2006-10-19

申请号：PCT/US2006006538

申请日：2006-02-24

Applicant: ACCENT OPTICAL TECH INC ,  RAYMOND CHRIS ,  HUMMEL STEVE

Inventor： RAYMOND CHRIS ,  HUMMEL STEVE

IPC: G01B11/06 ,  G01N21/47

CPC classification number: G01B11/0616 ,  G01B11/24 ,  G01B11/30 ,  G01N21/21 ,  G01N21/274 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  G01N23/2251 ,  G01N2021/4792 ,  G03F7/70625

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wail angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract translation: 散射仪和使用散射测量法来确定周期性微结构，伪周期性结构以及具有小至100nm或更小的特征尺寸的其他非常小的结构的若干参数的方法。 本发明的若干具体实施例在半导体工业中特别有用，以确定在微处理器，存储器件和其他半导体器件中形成的特征的宽度，深度，线边缘粗糙度，壁角度，膜厚度以及许多其他参数。 然而，本发明的散射仪和方法不限于半导体应用，并且可以同样适用于其他应用。

公开(公告)号：WO2006044320A2

公开(公告)日：2006-04-27

申请号：PCT/US2005036371

申请日：2005-10-11

Applicant: ACCENT OPTICAL TECH INC ,  IND RES TECHNOLOGY INST ,  SMITH NIGEL PETER ,  KU YI-SHA ,  PANG HSUI LAN

Inventor： SMITH NIGEL PETER ,  KU YI-SHA ,  PANG HSUI LAN

IPC: G01B11/00

CPC classification number: G03F7/70633 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In an overlay metrology method used during semiconductor device fabrication, an overlay alignment mark facilitates alignment and/or measurement of alignment error of two layers on a semiconductor wafer structure, or different exposures on the same layer. A target is small enough to be positioned within the active area of a semiconductor device combined with appropriate measurement methods, which result in improved measurement accuracy.

Abstract translation: 在半导体器件制造期间使用的覆盖测量方法中，覆盖对准标记有助于半导体晶片结构上的两层对准或对同一层上的不同曝光的对准和/或测量。 目标小到足以与适当的测量方法结合在一起的半导体器件的有效区域内，这导致改进的测量精度。

公开(公告)号：WO2004055528A2

公开(公告)日：2004-07-01

申请号：PCT/US0340069

申请日：2003-12-15

Applicant: ACCENT OPTICAL TECH INC ,  KAMIENIECKI EMIL

Inventor： KAMIENIECKI EMIL

IPC: G01R27/26 ,  G01R31/265 ,  G01R31/28

CPC classification number: G01R31/2648 ,  G01R31/2656 ,  G01R31/2831

Abstract: The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen (200), e.g., dopant concentration of a near-surface region (52-54) of the specimen. In exemplary method, a target depth for measurement is selected (D1). This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen (Do). A light (212) is adjusted to an intensity selected to characterize a target region (L) of the specimen having a thickness no greater than the target depth and a surface of the specimen (52-54) is illuminated with the light (212). An AC voltage (205) signal induced in the specimen by the light is measured and this AC voltage (205) may be used to quantify an aspect of the electrical property, e.g., to determine dopant concentration, of the target region.

Abstract translation: 本公开提供了使得能够表征半导体样本（200）的电特性（例如，样本的近表面区域（52-54）的掺杂浓度）的方法和设备。 在示例性方法中，选择用于测量的目标深度（D1）。 例如，该厚度可以对应于标本（Do）的薄有源器件区域的标称生产厚度。 将光（212）调整到被选择为表征具有不大于目标深度的厚度的样本的目标区域（L）的强度并且利用光（212）照射样本（52-54）的表面。 。 测量由光在样本中感应的AC电压（205）信号，并且该AC电压（205）可以用于量化目标区域的电特性的一个方面，例如以确定掺杂剂浓度。

公开(公告)号：WO2006080902A3

公开(公告)日：2007-03-08

申请号：PCT/US2004029102

申请日：2004-09-08

Applicant: ACCENT OPTICAL TECH INC ,  RAYMOND CHRISTOPHER

Inventor： RAYMOND CHRISTOPHER

IPC: G01B11/00

CPC classification number: G03F7/70625 ,  G01B11/303

Abstract: A system (10) is provided to measure line edge roughness by directing incident radiation (I) through a lens (28) onto a line grating (G) on a workpiece (W) on a support (20) and detecting reflected radiation (R) from the grating (G). The support (20) and workpiece (W) is rotated (24) by a motor (23). The radiation system (25) includes a radiation source (30) with a radiation element (32) such as a laser on an LED to provide the incident radiation (I) and a polarizing element (34). The radiation detector (50) includes a beam splitter (56) and a pair of detector elements (52a, 52b) with polarizing filters (54a, 54b) which are oriented at 90 degrees relative to each other. A controller (70) with a programmable processor (72) controls the various elements of the system.

Abstract translation: 提供了一种系统（10），用于通过将入射辐射（I）通过透镜（28）引导到支撑体（20）上的工件（W）上的线光栅（G）上并检测反射辐射（R ）从光栅（G）。 支撑件（20）和工件（W）通过马达（23）旋转（24）。 辐射系统（25）包括具有辐射元件（32）的辐射源（30），例如LED上的激光以提供入射辐射（I）和偏振元件（34）。 辐射检测器（50）包括分束器（56）和一对具有偏振滤光器（54a，54b）的检测器元件（52a，52b），其相对于彼此以90度取向。 具有可编程处理器（72）的控制器（70）控制系统的各种元件。

公开(公告)号：WO2006091782B1

公开(公告)日：2006-11-23

申请号：PCT/US2006006537

申请日：2006-02-24

Applicant: ACCENT OPTICAL TECH INC ,  RAYOND CHRIS ,  HUMMEL STEVE

Inventor： RAYOND CHRIS ,  HUMMEL STEVE

IPC: G01B11/06 ,  G01N21/47

CPC classification number: G01B11/0616 ,  G01B11/24 ,  G01B11/30 ,  G01N21/21 ,  G01N21/274 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  G01N23/2251 ,  G01N2021/4792 ,  G03F7/70625

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometer comprises a navigation system for the alignment of the microstructure and an autofocus system. A detector records the pupil plane image of the surface.

Abstract translation: 散射仪和使用散射测量法来确定周期性微结构，伪周期性结构以及具有小至100nm或更小的特征尺寸的其他非常小的结构的若干参数的方法。 本发明的几个具体实施例在半导体工业中特别有用，以确定在微处理器，存储器件和其他半导体器件中形成的特征的宽度，深度，线边缘粗糙度，壁角度，膜厚度以及许多其他参数。 散射仪包括用于微结构对准的导航系统和自动对焦系统。 探测器记录表面的瞳孔平面图像。

公开(公告)号：WO2007005438A3

公开(公告)日：2007-11-22

申请号：PCT/US2006025083

申请日：2006-06-27

Applicant: ACCENT OPTICAL TECH INC ,  BUCZKOWSKI ANDRZEJ

Inventor： BUCZKOWSKI ANDRZEJ

IPC: G01N21/00 ,  G01N21/01 ,  G01N21/86 ,  G01N23/00 ,  G06F7/00 ,  H01L21/30 ,  H01L21/66

CPC classification number: G01N21/9505 ,  G01N21/6489 ,  G01N2021/646

Abstract: Non-contact methods and apparatuses for detecting defects such as pile-ups in semiconductor wafers are disclosed herein. An embodiment of one such method includes irradiating a portion of a semiconductor workpiece, measuring photoluminescence from the irradiated portion of the semiconductor workpiece, and estimating a density of defects in the irradiated portion of the semiconductor workpiece based on the measured photoluminescence.

Abstract translation: 本文公开了用于检测诸如半导体晶片中的堆积的缺陷的非接触方法和装置。 一种这样的方法的实施例包括照射半导体工件的一部分，测量来自半导体工件的照射部分的光致发光，以及基于测量的光致发光来估计半导体工件的照射部分中的缺陷的密度。

公开(公告)号：WO2007024332A2

公开(公告)日：2007-03-01

申请号：PCT/US2006025174

申请日：2006-06-27

Applicant: ACCENT OPTICAL TECH INC ,  VAGOS PEDRO

Inventor： VAGOS PEDRO

IPC: H01L21/336

CPC classification number: H01L21/26513 ,  H01L22/14

Abstract: Methods and apparatus for assessing a constituent in a semiconductor substrate. Several embodiments of the invention are directed toward non-contact methods and systems for identifying an atom specie of a dopant implanted into the semiconductor substrate using techniques that do not mechanically contact the substrate with electrical leads or other types of mechanical measuring instruments. For example, one embodiment of a non-contact method of assessing a constituent in a semiconductor substrate in accordance with the invention comprises obtaining an actual reflectance spectrum of infrared radiation reflected from the semiconductor substrate, and ascertaining a plasma frequency value (? p ) and a collision frequency value (?) for the semiconductor substrate based on the actual reflectance spectrum. This method can further include identifying a dopant type based on a relationship between dopant types and (a) plasma frequency values and (b) collision frequency values.

Abstract translation: 用于评估半导体衬底中的组分的方法和装置。 本发明的几个实施例涉及使用不与电引线或其他类型的机械测量仪器机械接触衬底的技术来识别注入到半导体衬底中的掺杂剂的原子物种的非接触方法和系统。 例如，根据本发明的评估半导体衬底中的成分的非接触方法的一个实施例包括获得从半导体衬底反射的红外辐射的实际反射光谱，并确定等离子体频率值（α< 基于实际反射光谱的半导体衬底的碰撞频率值（θ）。 该方法还可以包括基于掺杂剂类型与（a）等离子体频率值和（b）碰撞频率值之间的关系识别掺杂剂类型。

公开(公告)号：WO2006091781B1

公开(公告)日：2006-11-09

申请号：PCT/US2006006536

申请日：2006-02-24

Applicant: ACCENT OPTICAL TECH INC ,  RAYMOND CHRIS ,  HUMMEL STEVE ,  LIU SEAN

Inventor： RAYMOND CHRIS ,  HUMMEL STEVE ,  LIU SEAN

IPC: G01B11/06 ,  G01N21/47

CPC classification number: G01B11/0616 ,  G01B11/24 ,  G01B11/30 ,  G01N21/21 ,  G01N21/274 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  G01N23/2251 ,  G01N2021/4792 ,  G03F7/70625

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications. Scatterometer contains a CMOS detector without a flat, parallel cover between focal lens and CMOS chip.

Abstract translation: 散射计和使用散射测定法确定周期性微结构，伪周期结构以及特征尺寸小至100nm或更小的其它非常小的结构的几个参数的方法。 本发明的几个具体实施例在半导体工业中特别有用，以确定在微处理器，存储器件和其它半导体器件中形成的特征的宽度，深度，线边缘粗糙度，壁角度，膜厚度和许多其它参数。 然而，本发明的散射仪和方法不限于半导体应用，并且可以在其它应用中同样适用。 散射计包含一个CMOS检测器，在焦距透镜和CMOS芯片之间没有平面的平行盖。

公开(公告)号：WO2006093722A2

公开(公告)日：2006-09-08

申请号：PCT/US2006006092

申请日：2006-02-22

Applicant: ACCENT OPTICAL TECH INC ,  IND TECH RES INST ,  SMITH NIGEL PETER ,  KU YI-SHA ,  PANG HSUI LAN

Inventor： SMITH NIGEL PETER ,  KU YI-SHA ,  PANG HSUI LAN

CPC classification number: G03F7/70633

Abstract: In systems and methods measure overlay error in semiconductor device manufacturing based on target image asymmetry. As a result, the advantages of using very small in-chip targets can be achieved, while their disadvantages are reduced or eliminated. Methods for determining overlay error based on measured asymmetry can be used with existing measurement tools and systems. These methods allow for improved manufacturing of semiconductor devices and similar devices formed from layers.

Abstract translation: 在系统和方法中，基于目标图像不对称性测量半导体器件制造中的覆盖误差。 结果，可以实现使用非常小的芯片内目标的优点，同时减少或消除其缺点。 基于测量的不对称性确定覆盖误差的方法可以与现有的测量工具和系统一起使用。 这些方法允许改善由层形成的半导体器件和类似器件的制造。