CONTROL OF DISPLAY CONTENT BY MOVEMENT ON A FIXED SPHERICAL SPACE
    1.
    发明申请
    CONTROL OF DISPLAY CONTENT BY MOVEMENT ON A FIXED SPHERICAL SPACE 审中-公开
    通过固定球面空间的运动控制显示内容

    公开(公告)号:WO2003015072A1

    公开(公告)日:2003-02-20

    申请号:PCT/US2002/024981

    申请日:2002-08-06

    CPC classification number: G06F1/1694 G06F1/1626 G06F2200/1637

    Abstract: An apparatus for control of display content (the display content on screen 26) of a portable computer (20) with the use of user initiated motion. Calculations of motions of the device can be made based on the "Javel arc" (104,110), the preferential motion arc along which the device (20) travel. Additionally, the double integration of each accelerometer required in a conventional device is replaced by two magnetic sensors (1004,1006).

    Abstract translation: 一种用于利用用户启动的运动来控制便携式计算机(20)的显示内容(屏幕26上的显示内容)的装置。 可以基于设备(20)沿着其移动的优先运动弧的“拉丝弧”(104,110)来进行装置的运动的计算。 此外,常规设备中所需的每个加速度计的双重积分由两个磁性传感器(1004,1006)代替。

    METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY

    公开(公告)号:WO2006063007A3

    公开(公告)日:2006-06-15

    申请号:PCT/US2005/044180

    申请日:2005-12-06

    Abstract: A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

    SPIN BARRIER ENHANCED DUAL MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY USING THE SAME
    3.
    发明申请
    SPIN BARRIER ENHANCED DUAL MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY USING THE SAME 审中-公开
    旋转障碍增强双磁阻效应元件和磁记忆

    公开(公告)号:WO2005112033A1

    公开(公告)日:2005-11-24

    申请号:PCT/US2005/017494

    申请日:2005-05-11

    Inventor: VALET, Thierry

    CPC classification number: H01L43/08 G11C11/16

    Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes first pinned, spacer, free, spin barrier, and second pinned layers. The spacer layer is nonmagnetic and resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer resides between the spacer and spin barrier layers. The spin barrier layer is between the free and second pinned layers. The spin barrier layer is configured to reduce an outer surface contribution to the free layer damping constant. In one aspect, the spin barrier layer has a high areal resistance and may substantially eliminate spin pumping induced damping. In another aspect, the magnetic element also includes a spin accumulation layer between the spin barrier and free layers. The spin accumulation layer has a high conductivity and may have a long spin diffusion length.

    Abstract translation: 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括第一固定,间隔物,自由,自旋屏障和第二固定层。 间隔层是非磁性的并且位于被钉扎层和自由层之间。 当写入电流通过磁性元件时,可以使用自旋转移来切换自由层。 自由层位于间隔物和自旋阻挡层之间。 自旋阻挡层在自由和第二被钉扎层之间。 自旋阻挡层被配置为减小对自由层阻尼常数的外表面贡献。 在一个方面,自旋势垒层具有高的面电阻,并且可以基本上消除自旋泵送诱发的阻尼。 在另一方面,磁性元件还包括在自旋屏障和自由层之间的自旋累积层。 自旋累积层具有高导电性并且可以具有长的自旋扩散长度。

    SYSTEM AND METHOD FOR CALIBRATING AN ACCELEROMETER ASSEMBLY
    4.
    发明申请
    SYSTEM AND METHOD FOR CALIBRATING AN ACCELEROMETER ASSEMBLY 审中-公开
    用于校准加速度计总成的系统和方法

    公开(公告)号:WO2002059627A1

    公开(公告)日:2002-08-01

    申请号:PCT/US2001/043310

    申请日:2001-11-21

    Inventor: VALET, Thierry

    CPC classification number: G01P21/00

    Abstract: A system and method for calibrating an accelerometer assembly is disclosed. In a preferred embodiment, the system includes a controllable motor that rotates an accelerometer assembly around a first axis of rotation (A1), a rotary stage for rotating and holding the accelerometer assembly to at least one other axis of rotation (A2), and a way to vary and hold constant the temperature. The system also includes a computer system for managing the operation of the temperature control and the operation of the motion generation. The computer system further stores and processes the output signals created by the accelerometer assembly so that certain parameters related to the accelerometer assembly can be determined. The parameters include the angular velocity of rotation around the first axis, the angular position of the accelerometer assembly in relation to its rotation around the second axis, and the third parameter being the temperature of the accelerometer assembly. Using these parameters, the accelerometer can be calibrated.

    Abstract translation: 公开了一种用于校准加速度计组件的系统和方法。 在一个优选实施例中,该系统包括一个可控制的马达,它使加速度计组件围绕第一旋转轴线(A1)旋转,旋转台架用于将加速度计组件旋转并保持在至少一个其它旋转轴线(A2)上, 改变和保持温度恒定的方式。 该系统还包括用于管理温度控制和运动生成操作的计算机系统。 计算机系统还存储和处理由加速度计组件产生的输出信号,从而可以确定与加速度计组件有关的某些参数。 这些参数包括围绕第一轴线的旋转角速度,加速度计组件相对于其围绕第二轴线的旋转的角度位置,第三参数是加速度计组件的温度。 使用这些参数可以校准加速度计。

    METHOD FOR MAKING MAGNETORESISTIVE TRANSDUCERS
    5.
    发明申请
    METHOD FOR MAKING MAGNETORESISTIVE TRANSDUCERS 审中-公开
    制造磁传感器的方法

    公开(公告)号:WO1996015461A1

    公开(公告)日:1996-05-23

    申请号:PCT/FR1995001484

    申请日:1995-11-10

    Inventor: THOMSON-CSF

    Abstract: A method for using microlithography to form columns with side surfaces to be provided with an insulating coating and top surfaces having no insulating coating, in magnetic metal multilayers deposited by cathode sputtering or molecular beam epitaxy, so that a current can be circulated perpendicularly to the plane of the layers and the phenomenon of perpendicular giant magnetoresistance can be used. The method comprises a first step of forming on the surface of a substrate (10) a stack consisting of a first conductive layer (8) contacting the substrate, and alternating magnetic layers and non-magnetic metal layers forming a magnetic metal multilayer (7) contacting the conductive layer (8); a second step of forming a second conductive layer on the magnetic metal multilayer (7); a third step of forming a first resin mask (12, 18) having the same size as a magnetoresistive sensitive element to be produced; a fourth step of etching around the mask of the second conductive layer and the magnetic metal multilayer (7); a fifth step of depositing an insulating layer on the structure; a sixth step of lifting off the resin mask and the insulating layer thereon; and a seventh step of restoring contact (21) on the second conductive layer.

    Abstract translation: 一种用于通过阴极溅射或分子束外延沉积的磁性金属多层中使用微光刻法形成具有侧表面以提供绝缘涂层和顶表面的不具有绝缘涂层的柱的方法,使得电流可垂直于平面循环 的层和垂直巨磁阻的现象可以使用。 该方法包括在基板(10)的表面上形成由与基板接触的第一导电层(8)和形成磁性金属多层(7)的交替磁性层和非磁性金属层构成的叠层的第一步骤, 使所述导电层(8)接触; 在所述磁性金属多层(7)上形成第二导电层的第二步骤; 形成与要制造的磁阻敏感元件相同尺寸的第一树脂掩模(12,18)的第三步骤; 围绕第二导电层的掩模和磁性金属多层(7)蚀刻的第四步骤; 在所述结构上沉积绝缘层的第五步骤; 在其上提起树脂掩模和绝缘层的第六步骤; 以及在第二导电层上恢复接触(21)的第七步骤。

    METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY
    6.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY 审中-公开
    提供高纹理磁阻元件和磁记忆的方法和系统

    公开(公告)号:WO2006063007A2

    公开(公告)日:2006-06-15

    申请号:PCT/US2005044180

    申请日:2005-12-06

    Abstract: A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

    Abstract translation: 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括在被钉扎层和自由层之间提供钉扎层,自由层和间隔层。 间隔层是绝缘的并且具有有序晶体结构。 间隔层还被构造成允许穿过间隔层的隧穿。 在一个方面,自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。 在另一方面,自由层由两个子层组成,第一子层相对于间隔层具有特定的晶体结构和纹理,而第二子层具有较低的力矩。 在另一方面,该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层,并且位于自由层和第二钉扎层之间。 磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

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