公开(公告)号：WO2018125248A1

公开(公告)日：2018-07-05

申请号：PCT/US2016/069638

申请日：2016-12-31

Applicant: INTEL CORPORATION ,  MANIPATRUNI, Sasikanth ,  CHAWLA, Jasmeet S. ,  WIEGAND, Christopher J. ,  NIKONOV, Dmitri E. ,  GOLONZKA, Oleg ,  YOUNG, Ian A.

Inventor： MANIPATRUNI, Sasikanth ,  CHAWLA, Jasmeet S. ,  WIEGAND, Christopher J. ,  NIKONOV, Dmitri E. ,  GOLONZKA, Oleg ,  YOUNG, Ian A.

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/10

Abstract: Embodiments are generally directed to Heusler alloy based magnetic tunnel junctions and refractory interconnects. An embodiment of an apparatus includes a magnetic tunnel junction (MTJ) stack of an MRAM (Magnetoresistive Random Access Memory), the MTJ stack including a free magnetic layer and a fixed magnetic later, wherein the magnetic tunnel junction stack including one or more Heusler alloys; and metal interconnects for the MRAM, wherein the metal interconnects include one or more refractory metals, Silicides or Germinides of Nickel or Cobalt, refractory Heusler alloy, or Silicides of Heusler alloy.

公开(公告)号：WO2017160311A1

公开(公告)日：2017-09-21

申请号：PCT/US2016/023155

申请日：2016-03-18

Applicant: INTEL CORPORATION

Inventor： LEE, Kevin, J. ,  WANG, Yih

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L27/228 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/34 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/528 ,  H01L29/785 ,  H01L43/04 ,  H01L43/12 ,  H01L43/14

Abstract: Damascene-based approaches for embedding spin hall MTJ devices into a logic processor, and the resulting structures, are described. In an example, a logic processor includes a logic region including a metallization layer. The logic processor also includes a memory array including a plurality of two-transistor one magnetic tunnel junction (MTJ) spin hall effect electrode (2T-1MTJ SHE electrode) bit cells. The spin hall effect electrodes of the 2T-1MTJ SHE electrode bit cells are disposed in a lower dielectric layer laterally adjacent to the metallization layer of the logic region. The MTJs of the 2T-1MTJ SHE electrode bit cells are disposed in an upper dielectric layer laterally adjacent to the metallization layer of the logic region.

Abstract translation: 描述了用于将自旋霍尔MTJ器件嵌入到逻辑处理器中的基于镶嵌的方法，以及所得到的结构。 在一个示例中，逻辑处理器包括包含金属化层的逻辑区域。 逻辑处理器还包括包括多个双晶体管一个磁隧道结（MTJ）自旋霍尔效应电极（2T-1MTJ SHE电极）位单元的存储器阵列。 2T-1MTJ SHE电极位单元的自旋霍尔效应电极设置在横向邻近逻辑区域的金属化层的下介电层中。 2T-1MTJ SHE电极位单元的MTJ设置在与逻辑区域的金属化层横向相邻的上介电层中。

公开(公告)号：WO2017091310A1

公开(公告)日：2017-06-01

申请号：PCT/US2016/058449

申请日：2016-10-24

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： ZHU, Jian ,  JAN, Guenole ,  LEE, Yuan-Jen ,  LIU, Huanlong ,  TONG, Ru-Ying ,  WANG, Po-Kang

IPC: H01L43/08 ,  H01F10/16 ,  H01F10/32 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A seed layer stack (24) with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer (22) on a seed layer (21) such as Mg where the seed layer has a resputtering rate 2 to 30X that of the amorphous layer. The uppermost seed layer (23) is a template layer that is NiCr or NiFeCr. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400°C and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited. The seed layer stack may include a bottommost Ta or TaN buffer layer.

Abstract translation: 通过在晶种层（21）上溅射沉积非晶层（22）来形成具有平滑顶面的种子层叠层（24），峰谷粗糙度为0.5nm，所述晶种层（21）例如Mg 其中种子层具有非晶层的2至30倍的再溅射速率。 最上面的种子层（23）是NiCr或NiFeCr的模板层。 结果，在作为参考层，自由层或偶极层的上覆磁层中的垂直磁各向异性在高达400℃的高温处理期间基本上保持不变，并且对于嵌入式MRAM，自旋电子器件等中的磁隧道结是有利的。 或读头传感器。 无定形晶种层是SiN，TaN或CoFeM，其中M是B或另一种元素，其含量使CoFeM在沉积时为非晶态。 种子层堆叠可以包括最下面的Ta或TaN缓冲层。

公开(公告)号：WO2016193908A1

公开(公告)日：2016-12-08

申请号：PCT/IB2016/053195

申请日：2016-05-31

Applicant: CROCUS TECHNOLOGY SA

Inventor： STAINER, Quentin

IPC: G11C11/16 ,  H03F15/00

CPC classification number: G11C11/161 ,  G06G7/14 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08 ,  H03F15/00

Abstract: A magnetic device (100) configured to perform an analog adder circuit function and comprising a plurality of magnetic units, each including n magnetic tunnel junction (2, 2', 2", 2"',...) electrically connected in series via a current line (3), each magnetic tunnel junction comprising a storage magnetic layer (23) having a storage magnetization (230), a sense magnetic layer (21) having a sense magnetization (210), and a tunnel barrier layer (22); n input lines (4, 4', 4", 4"',...), each being configured to generate a magnetic field (42, 42', 42", 42'",...) adapted for varying a direction of the sense magnetization (210) and a resistances (R 1 , R 2 ) of a corresponding one of the n magnetic tunnel junctions, based on a corresponding input (41, 41', 41 ", 41 "',...) wherein the junction resistance of said corresponding one of said n magnetic tunnel junctions varies linearly based on said corresponding input; wherein each of the n magnetic units is configured to add said n inputs (41, 41', 41 ", 41'",...) to generate an output signal (V out ) that varies in response to the n resistances (R 1 , R 2 , R 3 , R 4 ,...); the n input lines being configured to conduct n independent signals so that the output signal can vary as a function of the n independent input signals.

Abstract translation: 一种被配置为执行模拟加法器电路功能并且包括多个磁性单元的磁性装置（100），每个磁性单元包括串联电连接的n个磁性隧道结（2,2'，2“，2”'，...） 电流线（3），每个磁性隧道结包括具有存储磁化（230）的存储磁性层（23），具有感测磁化强度（210）的感测磁性层（21）和隧道势垒层（22） ; n个输入线（4,4'，4“，4”'，...），每个被配置为产生适于改变 基于对应的输入端（41,41'，41“，41”'，...），所述n个磁性隧道结中相应的一个磁感应强度的方向（210）和电阻（R1，R2） 所述n个磁隧道结中的所述对应的一个磁结结的结电阻基于所述相应的输入线性变化; 其特征在于，所述n个磁性单元中的每一个被配置为加上所述n个输入端（41,41'，41“，41”，...）以产生响应于n个电阻而变化的输出信号（Vout） R2，R3，R4，...）; n个输入线被配置为传导n个独立的信号，使得输出信号可以根据n个独立的输入信号而变化。

公开(公告)号：WO2016117853A1

公开(公告)日：2016-07-28

申请号：PCT/KR2016/000107

申请日：2016-01-06

Applicant: 한양대학교 산학협력단

Inventor： 홍진표 ,  이자빈

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/15

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/329 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: 수직자기이방성을 갖는 MTJ 구조를 제공한다. 수직자기이방성을 갖는 MTJ 구조는 기판, 상기 기판 상에 위치하는 인위적 반강자성층, 상기 인위적 반강자성층 상에 위치하되, W 또는 W를 포함하는 합금을 포함하는 버퍼층, 상기 버퍼층 상에 위치하고, 수직자기이방성을 갖는 제1 강자성층, 상기 제1 강자성층 상에 위치하는 터널링 배리어층 및 상기 터널링 배리어층 상에 위치하고, 수직자기이방성을 갖는 제2 강자성층을 포함할 수 있다. 따라서, 인위적 반강자성층을 CoFeB/MgO/CoFeB 구조와 접합시키는 적용에 있어서 그 사이에 버퍼층을 사용함으로써 고온에서의 열적 안정성이 향상된 MTJ 구조를 제공할 수 있다.

Abstract translation: 提供具有垂直磁各向异性的MTJ结构。 具有垂直磁各向异性的MTJ结构可以包括：基底; 位于基板上的人造反铁磁层; 位于人造反铁磁层上的缓冲层，包括W或含W的合金; 位于缓冲层上的第一铁磁层，具有垂直磁各向异性; 位于所述第一铁磁层上的隧道势垒层; 以及位于隧道势垒层上的第二铁磁层，并且具有垂直的磁各向异性。 因此，在使用CoFeB / MgO / CoFeB结构的人造反铁磁层的接合的应用中，可以通过使用它们之间的缓冲层来提供具有改善的高温热稳定性的MTJ结构。

公开(公告)号：WO2016079741A1

公开(公告)日：2016-05-26

申请号：PCT/IL2015/051115

申请日：2015-11-19

Applicant: YEDA RESEARCH AND DEVELOPMENT CO. LTD.

Inventor： TAL, Oren ,  VARDIMON, Ran ,  KLIONSKY, Marina

IPC: H01F10/32

CPC classification number: H01L29/66984 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/0072 ,  H01F10/3254 ,  H01F10/329 ,  H01L29/0673 ,  H01L29/66007 ,  H01L29/7613 ,  H01L29/82 ,  H01L29/84

Abstract: The present invention is in the field of spintronics, and relates to a highly efficient spin filter device, such as a spin-polarizer or a spin valve, and a method for fabrication thereof.

Abstract translation: 本发明涉及自旋电子学领域，涉及一种高效自旋式过滤器装置，例如自旋偏振器或自旋阀，及其制造方法。

公开(公告)号：WO2015152736A3

公开(公告)日：2016-01-14

申请号：PCT/NZ2015050038

申请日：2015-03-31

Applicant: GRANVILLE SIMON EDWARD ,  ANTON EVA-MARIA JOHANNA ,  NATALI FRANCK ,  RUCK BENJAMIN JOHN ,  TRODAHL HARRY JOSEPH ,  MCNULTY JAMES FRANCIS

Inventor： GRANVILLE SIMON EDWARD ,  ANTON EVA-MARIA JOHANNA ,  NATALI FRANCK ,  RUCK BENJAMIN JOHN ,  TRODAHL HARRY JOSEPH ,  MCNULTY JAMES FRANCIS

IPC: H01F1/059 ,  H01F1/06

CPC classification number: H01F10/126 ,  H01F10/3254 ,  H01F41/302 ,  H01L21/02439 ,  H01L21/02502 ,  H01L21/02521 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Disclosed herein are magnetic materials comprising rare earth nitrides and, more particularly, magnetic materials comprising multilayer-structured materials comprising one relatively soft and one relatively hard magnetic layer. The magnetic materials comprise a first ferromagnetic layer, a second ferromagnetic layer, and a blocking layer between and in contact with each of the first 5 and second ferromagnetic layers. The first and second ferromagnetic layers have different coercive fields. The first ferromagnetic layer comprises a first rare earth nitride material and the second ferromagnetic layer comprises a second rare earth nitride material. Also disclosed are methods for preparing the materials. The materials are useful in the fabrication of devices, such as GMR magnetic field sensors, MRAM devices, TMR magnetic field sensors, and magnetic 10 tunnel junctions.

Abstract translation: 本文公开了包含稀土氮化物的磁性材料，更具体地，包括包含一个相对较软和一个相对硬的磁性层的多层结构材料的磁性材料。 磁性材料包括第一铁磁层，第二铁磁层以及与第一铁磁层和第二铁磁层中的每一个接触的阻挡层。 第一和第二铁磁层具有不同的矫顽场。 第一铁磁层包括第一稀土氮化物材料，第二铁磁层包括第二稀土氮化物材料。 还公开了制备这些材料的方法。 这些材料可用于制造诸如GMR磁场传感器，MRAM器件，TMR磁场传感器和磁性10隧道结的器件。

公开(公告)号：WO2014154497A1

公开(公告)日：2014-10-02

申请号：PCT/EP2014/054985

申请日：2014-03-13

Applicant: TECHNISCHE UNIVERSITÄT WIEN

Inventor： MAHMOUDI, Hiwa ,  SELBERHERR, Siegfried ,  SVERDLOV, Viktor ,  WINDBACHER, Thomas

IPC: B82Y25/00 ,  G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  G11C11/15 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/329 ,  H01L43/10

Abstract: The invention relates to a spin torque magnetic integrated circuit (1), comprising a shared free layer (2) with a magnetic anisotropy such as a shape anisotropy or a crystal anisotropy with at least two stable magnetic states disposed on a substrate, a first non-magnetic layer (3) disposed on a first side of the free layer (2), input regions disposed on the non-magnetic layer (3), at least one output region (5) disposed on the non-magnetic layer (3), comprising at least one output layer (6), capping layers (8) to electrically contact the input regions (4a, 4b) and output region (5), wherein two input regions (4a, 4b) are disposed on the non-magnetic layer (3), at least one of the input regions (4a, 4b) comprises at least one magnetic input reference layer (6), and the orientation of the magnetization vectors of the input reference layers, the output reference layer, and the orientation of the magnetic anisotropy of the free layer are collinear. The invention further relates to a flip flop circuit comprising such a circuit, a shift register comprising such a flip flop, and methods to operate these circuits.

Abstract translation: 本发明涉及一种自旋转矩磁集成电路（1），其包括具有磁各向异性的共享自由层（2），其具有形状各向异性或具有设置在衬底上的至少两个稳定磁状态的晶体各向异性，第一非 - 设置在自由层（2）的第一侧的磁性层（3），设置在非磁性层（3）上的输入区域，设置在非磁性层（3）上的至少一个输出区域（5） ，包括至少一个输出层（6），与所述输入区域（4a，4b）和输出区域（5）电接触的封盖层（8），其中两个输入区域（4a，4b）设置在非磁性 层（3）中的至少一个输入区域（4a，4b）包括至少一个磁性输入参考层（6），并且输入参考层，输出参考层和取向 的自由层的磁各向异性是共线的。 本发明还涉及包括这种电路的触发器电路，包括这种触发器的移位寄存器以及操作这些电路的方法。

公开(公告)号：WO2014107334A1

公开(公告)日：2014-07-10

申请号：PCT/US2013/076894

申请日：2013-12-20

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： ZHANG, Kunliang ,  WANG, Hui-Chuan ,  QUAN, Junjie ,  CHYE, Yewhee ,  LI, Min

IPC: G01R33/09

CPC classification number: H01L43/10 ,  G01R33/093 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

Abstract: A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth.

Abstract translation: 最终形成传感器或MRAM元件的TMR堆叠或GMR堆叠在其铁磁自由层和/或其SyAP钉扎层的AP1层中包括Fe或富铁FeX层的插入层。 X是选自总原子百分数小于50％的Ta，Hf，V，Co，Mo，Zr，Nb或Ti的非磁性金属元素（或元素）。 插入层的厚度在1至10埃之间，优选2至5埃，并且在TMR堆叠中，它们被插入到隧道势垒层和铁磁自由层或隧道势垒层之间的界面附近，以及 TMR堆叠中的Syap钉扎层的AP1层。 插入层限制了CoFeB和NiFe层中B和Ni的相互扩散，并阻止NiFe晶体生长。

公开(公告)号：WO2014022329A1

公开(公告)日：2014-02-06

申请号：PCT/US2013/052607

申请日：2013-07-30

Applicant: MAGIC TECHNOLOGIES, INC.

Inventor： JAN, Guenole ,  TONG, Ru-Ying ,  WANG, Yu-Jen

IPC: H01F10/30 ,  H01F10/32 ,  H01F41/30

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) n or (CoX) n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300°C and 400°C may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其在具有（Co / X）n或（CoX）n组成的上覆层压层中增强垂直磁各向异性（PMA），其中n为2至30，X 是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。 可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 叠层可以用作MTJ中的参考层，偶极层或自由层。 可以使用300℃至400℃之间的退火来进一步增强层压层中的PMA。