公开(公告)号：WO2012031136A3

公开(公告)日：2012-04-26

申请号：PCT/US2011050226

申请日：2011-09-01

Applicant: GT ADVANCED CZ LLC ,  DELUCA JOHN P ,  DELK FRANK S ,  JOHNSON BAYARD K ,  LUTER WILLIAM L ,  MIDDENDORF NEIL D ,  WILLIAMS DICK S ,  OSTROM NELS PATRICK ,  HIGHFILL JAMES N

Inventor： DELUCA JOHN P ,  DELK FRANK S ,  JOHNSON BAYARD K ,  LUTER WILLIAM L ,  MIDDENDORF NEIL D ,  WILLIAMS DICK S ,  OSTROM NELS PATRICK ,  HIGHFILL JAMES N

IPC: C30B15/04 ,  C30B29/06 ,  H01L31/042

CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B29/06

Abstract: A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

Abstract translation: 公开了具有沿纵向和/或径向轴的电阻率变化小于10％的掺杂硅单晶和制备一个或一系列连续的掺杂硅晶体的方法。 该方法包括：将包含硅的熔化材料提供到连续的切克劳斯基晶体生长装置中，将掺杂剂例如镓，铟或铝递送到熔化材料中，当熔化材料处于熔化时将晶种提供到熔化材料中 通过从熔融材料中取出晶种来生长掺杂硅单晶。 在生长步骤期间向设备提供额外的熔融材料。 还公开了用于计算在一次或多次掺杂事件期间要递送到熔融材料中的掺杂剂的量的掺杂模型，用于递送掺杂剂的方法以及用于递送掺杂剂的容器和容器。

公开(公告)号：WO2012031136A2

公开(公告)日：2012-03-08

申请号：PCT/US2011/050226

申请日：2011-09-01

Applicant: GT ADVANCED CZ LLC ,  DELUCA, John, P. ,  DELK, Frank, S. ,  JOHNSON, Bayard, K. ,  LUTER, William, L. ,  MIDDENDORF, Neil, D. ,  WILLIAMS, Dick, S. ,  OSTROM, Nels, Patrick ,  HIGHFILL, James, N.

Inventor： DELUCA, John, P. ,  DELK, Frank, S. ,  JOHNSON, Bayard, K. ,  LUTER, William, L. ,  MIDDENDORF, Neil, D. ,  WILLIAMS, Dick, S. ,  OSTROM, Nels, Patrick ,  HIGHFILL, James, N.

IPC: C30B15/04 ,  C30B29/06 ,  H01L31/042

CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B29/06

Abstract: A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

Abstract translation: 公开了具有小于10％的纵向和/或径向轴的电阻率变化的掺杂硅单晶以及制备一个或一系列顺序的掺杂硅晶体的方法。 该方法包括将包含硅的熔体材料提供到连续的切克劳斯基晶体生长装置中，将诸如镓，铟或铝的掺杂剂输送到熔体材料中，当熔体材料熔融时，将晶种提供到熔体材料中 形成并通过从熔体材料中取出晶种来生长掺杂的硅单晶。 在生长步骤期间将额外的熔体材料提供给设备。 还公开了一种用于计算在一个或多个掺杂事件期间输送到熔体材料中的掺杂剂的量的掺杂模型，用于输送掺杂剂的方法，以及用于输送掺杂剂的容器和容器的掺杂模型。

公开(公告)号：WO2011149490A1

公开(公告)日：2011-12-01

申请号：PCT/US2010/056192

申请日：2010-11-10

Applicant: CONFLUENCE SOLAR INCORPORATED ,  WILLIAMS, Dick, S. ,  LUTER, William, L.

Inventor： WILLIAMS, Dick, S. ,  LUTER, William, L.

IPC: F16K51/02 ,  F16K3/28 ,  F16K31/64 ,  F16K3/30

CPC classification number: F16K3/06 ,  F01L2003/25 ,  F16K3/10 ,  F16K51/02 ,  Y10T137/6579

Abstract: A pendulum gate valve (10) including an expandable gate (12) which pivots when unexpanded to selectively block a vacuum or other pressure-differential passage (20). The valve includes a valve plate (56) sealing one side of the passage and a ring (88) or barrier plate (154) abutting an opposed side of the passage when the gate member is expanded. A compression spring (106) biases apart the valve plate and ring to close the valve by means of respective two-stage hangers attached thereto, extending along the spring, and having distal ends capturing the spring. Pneumatic pressure (116) applied to a pneumatic cavity (114) formed between the middles of the two-stage hangers (66, 102) and accommodating the spring forces apart the valve plate and ring to open the valve in the blocking position. Thereby if pressure fails, the valve fails to a sealed state. The axially movable valve or barrier plate is advantageously water cooled (60) to allow use with a heated processing chamber.

Abstract translation: 摆闸闸阀（10）包括可膨胀闸门（12），当可膨胀闸门（12）在未膨胀时枢转以选择性地阻挡真空或其它压差通道（20）。 阀门包括密封通道的一侧的阀板（56）和当门构件膨胀时邻接通道的相对侧的环（88）或阻挡板（154）。 压缩弹簧（106）使阀板和环分开偏压，通过附接到其上的相应的两级悬挂器来弹簧关闭阀门，弹簧沿弹簧延伸，并具有捕获弹簧的远端。 施加到形成在两级衣架（66,102）的中间之间的气动空腔（114）的气动压力（116），并且将弹簧力容纳在阀板和环上，以将阀门打开在阻挡位置。 因此，如果压力失效，则阀门不能成为密封状态。 可轴向移动的阀或阻挡板有利地是水冷却（60）以允许与加热的处理室一起使用。