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    METHOD FOR MAKING A TRANSDUCER, TRANSDUCER MADE THEREFROM, AND APPLICATIONS THEREOF
    1.
    发明申请
    METHOD FOR MAKING A TRANSDUCER, TRANSDUCER MADE THEREFROM, AND APPLICATIONS THEREOF 审中-公开
    制造传感器的方法，其制造的传感器及其应用

    公开(公告)号：WO2010096077A1

    公开(公告)日：2010-08-26

    申请号：PCT/US2009/048750

    申请日：2009-06-26

    Applicant: CORNELL UNIVERSITY ,  THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY ,  PARPIA, Jeevak M. ,  CRAIGHEAD, Harold G. ,  CROSS, Joshua D. ,  ILIC, Bojan Robert ,  ZALALUTDINOV, Maxim K. ,  BALDWIN, Jeffrey W. ,  HOUSTON, Brian H.

    Inventor： PARPIA, Jeevak M. ,  CRAIGHEAD, Harold G. ,  CROSS, Joshua D. ,  ILIC, Bojan Robert ,  ZALALUTDINOV, Maxim K. ,  BALDWIN, Jeffrey W. ,  HOUSTON, Brian H.

    IPC: H01L41/083

    CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  Y10T29/49007

    Abstract: A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased.

    Abstract translation: 制造或制备薄膜叠层的方法，其显示中等的，有限的，受应力依赖的电阻，并且可以结合到转导机制中，使得能够从微机械结构或纳米机械结构读出简单有效的信号。 当结构被驱动时，中间层的电阻与运动一起被调制，并且通过合适的直流偏置，运动被直接转换成可检测的电压。 通常，来自MEMS或NEMS器件的检测信号是困难的，特别是使用能够与标准电子器件集成的方法。 因此，本文所述的薄膜制造或制备技术是MEMS / NEMS领域的技术进步，其可以实现新应用以及容易地开发CMOS-MEMS集成制造技术的能力。 还公开了：（i）电流从压电层从一个主表面流向相对的主表面的换能器; 和（ii）制造换能器的方法是减小压阻层的电阻率和/或压阻层的规格因子增加。

    CMOS INTEGRATED MICROMECHANICAL RESONATORS AND METHODS FOR FABRICATING THE SAME
    4.
    发明申请
    CMOS INTEGRATED MICROMECHANICAL RESONATORS AND METHODS FOR FABRICATING THE SAME 审中-公开
    CMOS集成微机械谐振器及其制造方法

    公开(公告)号：WO2010039307A3

    公开(公告)日：2010-06-17

    申请号：PCT/US2009048835

    申请日：2009-06-26

    Applicant: UNIV CORNELL ,  US NAVY ,  PARPIA JEEVAK M ,  CRAIGHEAD HAROLD G ,  CROSS JOSHUA D ,  ILIC BOJAN ROBERT ,  ZALALUTDINOV MAXIM K ,  BALDWIN JEFFREY W ,  HOUSTON BRIAN H

    Inventor： PARPIA JEEVAK M ,  CRAIGHEAD HAROLD G ,  CROSS JOSHUA D ,  ILIC BOJAN ROBERT ,  ZALALUTDINOV MAXIM K ,  BALDWIN JEFFREY W ,  HOUSTON BRIAN H

    IPC: H03H3/007 ,  H03H3/00 ,  H03H9/02

    CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  Y10T29/49007

    Abstract: The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.

    Abstract translation: 本发明涉及一种根据标准CMOS代工制造工艺制造的CMOS集成微机械器件。 标准CMOS代工厂制造过程的特征在于预定的层映射和预定的一组制造规则。 该器件包括根据预定层图和预定的一组制造规则形成或提供的半导体衬底。 根据预定的层图和预定的一组制造规则来制造MEMS谐振器装置。 MEMS谐振器装置包括具有大于或等于大约20平方微米的表面积的微机械谐振器结构。 至少一个CMOS电路被耦合到MEMS谐振器构件。 至少一个CMOS电路也是根据预定的层图和预定的制造规则制造的。

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