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1.发明申请
公开(公告)号：WO2023083712A1
公开(公告)日：2023-05-19
申请号：PCT/EP2022/080802
申请日：2022-11-04
发明人： VARGHESE, Tansen
摘要： An optoelectronic semiconductor component (1) comprising a semiconductor body (10) having a first semiconductor layer (101), a first cladding layer (1010), a second semiconductor layer (102), a second cladding layer (1020), an active region (103) arranged between the first cladding layer (1010) and the second cladding layer (1020), and a blocking layer (104) arranged between the second cladding layer (1020) and the second semiconductor layer (102) is described herein. The active region (103) is designed to emit an electromagnetic radiation in an emission region (X). The first semiconductor layer (101) has a first conductivity type. The second semiconductor layer (102) has a second conductivity type. The first cladding layer (1010) and the second cladding layer (1020) are nominally undoped. The blocking layer (104) is formed of a semiconductor material and designed to confine an operating current of the active region (103) to a core region (50). The second semiconductor layer (102) extends at least partially through the blocking layer (104) to the second cladding layer (1020) in the core region (50), which is spaced apart from the lateral edges of the emission region (X). Further a method for manufacturing an optoelectronic semiconductor component (1) is provided.
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公开(公告)号：WO2023061668A1
公开(公告)日：2023-04-20
申请号：PCT/EP2022/074959
申请日：2022-09-08
发明人： VARGHESE, Tansen , HETZL, Martin , BECKER, Dirk
IPC分类号： H01L31/0352 , H01L31/16 , H01L33/00 , H01L31/167
摘要： An optoelectronic device is specified, said device comprising - a emitter (1) configured to emit electromagnetic radiation (2) having two or more peak wavelengths (21, 22, 23) and to be operated with an input voltage (UI), - a receiver (3) configured to receive the electromagnetic radiation (2) and to provide an output voltage (UO).
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公开(公告)号：WO2023086087A1
公开(公告)日：2023-05-19
申请号：PCT/US2021/058852
申请日：2021-11-10
发明人： KLEMP, Christoph , ILLEK, Stefan , KURTIN, Juanita N. , TREADWAY, Joseph A. , JOHANSSON, Erik , PLOESSL, Andreas , VARGHESE, Tansen
摘要： The invention concerns a method for manufacturing an optoelectronic semiconductor chip comprising the step providing a functional layer stack the functional layer stack comprising: - a first layer with a dopant of a first conductivity type; - an active region arranged on the first layer; - a second layer with a dopant of a second conductivity type arranged on the active region; and - a residual oxide layer arranged on at least one side surface of the first layer and/or the second layer and/or the active region; The method further comprises the steps of placing the functional layer stack in a liquid phase chemical reactor, removing oxygen from the at least one side surface, and growing an oxidatively stable layer on the at least one side surface.
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公开(公告)号：WO2023073211A1
公开(公告)日：2023-05-04
申请号：PCT/EP2022/080287
申请日：2022-10-28
发明人： VARGHESE, Tansen
摘要： The invention concerns a method for processing an optoelectronic component having a semiconductor material including Indium, comprising the steps of providing a growth substrate having a first lattice constant and epitaxial deposition of a sacrificial layer based on GaN with a dopant concentration higher than 1e18 atoms/cm3 having a second lattice constant different from the first lattice constant Then a top layer having a lower doping concentration than that of the sacrificial layer based on GaN and having a third lattice constant different from the first lattice constant is deposited, wherein the growth of the sacrificial layer and the top layer generates a plurality of dislocations on a surface of the top layer. A structured mask is provided onto the surface of the top layer, wherein first portions of the surface are exposed and second portions of the surface are covered and the sacrificial layer electrochemically porosifying through the dislocations on the exposed portions, such that the sacrificial layer below the second portions are at least partially porosified. Finally, a functional layer stack is formed.
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公开(公告)号：WO2023061669A1
公开(公告)日：2023-04-20
申请号：PCT/EP2022/074962
申请日：2022-09-08
IPC分类号： H01L27/15 , H01L31/173
摘要： An optoelectronic device is specified comprising - an emitter (1) arranged to emit electromagnetic radiation (2) and configured to be operated with an input voltage (UI), - a receiver (3) arranged to receive the electromagnetic radiation (2) and configured to provide at least part of an output voltage (UO), wherein - the emitter (1) and the receiver (3) are grown laterally adjacent to each other
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6.发明申请
公开(公告)号：WO2022167285A1
公开(公告)日：2022-08-11
申请号：PCT/EP2022/051744
申请日：2022-01-26
发明人： VON MALM, Norwin , VARGHESE, Tansen
摘要： Es wird ein Verfahren zur Herstellung einer Anordnung von Halbleiterchips (100) mit den folgenden Schritten angegeben: - Erzeugen einer Halbleiterschichtenfolge (10) umfassend eine aktive Schicht (11) auf einem ersten Träger (1), - Definieren von Halbleiterchips (101) in der Halbleiterschichtenfolge (10), wobei die Halbleiterchips (101) einen aktiven Bereich (102) umfassen, der ein Teil der aktiven Schicht (11) ist, - Übertragen von zumindest manchen der Halbleiterchips (101) auf einen Zielträger (4), der eine laterale Abmessung (S4) aufweist, die größer ist als eine laterale Abmessung (S1) des ersten Trägers (1), wobei - beim Übertragen der Halbleiterchips Gruppen (110) von Halbleiterchips (101) übertragen werden, und - in jeder Gruppe (110) eine Anordnung der Halbleiterchips (101) auf dem ersten Wafer (1) erhalten bleibt.
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公开(公告)号：WO2023061638A1
公开(公告)日：2023-04-20
申请号：PCT/EP2022/072662
申请日：2022-08-12
IPC分类号： H01L25/16 , H01L31/167 , H01L33/00 , H01L33/58 , H01L33/60 , H01L31/173
摘要： Es wird ein optoelektronisches Bauteil angegeben, das folgende Merkmale aufweist: • - einen Emitter (1), der mit einer elektrischen Eingangsspannung (Vin) betrieben wird und im Betrieb elektromagnetische Strahlung (2) erzeugt, • - eine Vielzahl von Empfängern (3), die ein Empfängerarray (4) bilden, wobei das Empfängerarray (4) vom Emitter (1) im Betrieb erzeugte elektromagnetische Strahlung (2) in eine elektrische Ausgangsspannung (Vout) umwandelt, wobei • - Strahlungseinkoppelflächen (5) der Empfänger (3) auf einer Strahlungsauskoppelfläche (6) des Emitters (1) angeordnet sind, und • - zwischen dem Emitter (1) und dem Empfängerarray (4) ein strahlungsbeeinflussendes Element (7) angeordnet ist, wobei das strahlungsbeeinflussende Element (7) vom Emitter (1) erzeugte elektromagnetische Strahlung (2) auf Strahlungseinkoppelflächen (5) der Empfänger (3) lenkt.
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公开(公告)号：WO2023061637A1
公开(公告)日：2023-04-20
申请号：PCT/EP2022/072564
申请日：2022-08-11
IPC分类号： H01L31/167 , H01L31/0687 , H01L31/0304 , H01L31/0352 , H01L31/0232 , H01L31/0216 , H01L31/047
摘要： An optoelectronic device is specified, comprising: an emitter (1), operated with an electrical input voltage (Vin) and configured to emit electromagnetic radiation (2) during operation, a receiver (3), configured to convert electromagnetic radiation (2) emitted by the emitter to an output voltage (Vout), wherein - the receiver (3) comprises a semiconductor layer sequence (5) with a plurality of stacked active layers (6), - electromagnetic radiation (2) emitted by the emitter is coupled into the receiver (3) via a first side face (7) of the semiconductor layer sequence (5), and - the electromagnetic radiation (2) propagates parallel to a main extension plane of the active layer (6) inside the active layer (6), where it is gradually absorbed and converted into an electrical voltage.
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公开(公告)号：WO2023061659A1
公开(公告)日：2023-04-20
申请号：PCT/EP2022/074318
申请日：2022-09-01
摘要： An optoelectronic device is specified comprising - emitters (1), each emitter (1) configured to emit electromagnetic radiation (2), - an assigned receiver (3) for each emitter (1), configured to receive at least part of the electromagnetic radiation (2) emitted by the emitter (1), wherein - the emitters (1) are configured to be operated with an input voltage (UI), - each receiver (3) is configured to provide at least part of an output voltage (UO), - each emitter (1) is physically connected to the assigned receiver (3).
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