公开(公告)号：WO2022203767A1

公开(公告)日：2022-09-29

申请号：PCT/US2022/015222

申请日：2022-02-04

Applicant: APPLIED MATERIALS, INC.

Inventor： TANNOS, Jethro ,  CITLA, Bhargav Sridhar ,  NEMANI, Srinivas D. ,  YIEH, Ellie ,  RUBNITZ, Joshua Alan ,  CHEN, Erica ,  ASRANI, Soham Sunjay ,  BEKIARIS, Nikolaos ,  BUCHBERGER, JR., Douglas Arthur

IPC: H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：WO2022203763A1

公开(公告)日：2022-09-29

申请号：PCT/US2022/014653

申请日：2022-02-01

Applicant: APPLIED MATERIALS, INC.

Inventor： ASRANI, Soham Sunjay ,  RUBNITZ, Joshua Alan ,  CITLA, Bhargav Sridhar ,  NEMANI, Srinivas D. ,  CHEN, Erica ,  BEKIARIS, Nikolaos ,  BUCHBERGER, JR., Douglas Arthur ,  TANNOS, Jethro ,  YIEH, Ellie

IPC: C23C16/455 ,  C23C16/42 ,  C23C16/505 ,  H01L21/02

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.