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    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
    2.
    发明申请
    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开

    公开(公告)号：WO2022203767A1

    公开(公告)日：2022-09-29

    申请号：PCT/US2022/015222

    申请日：2022-02-04

    Applicant: APPLIED MATERIALS, INC.

    Inventor： TANNOS, Jethro ,  CITLA, Bhargav Sridhar ,  NEMANI, Srinivas D. ,  YIEH, Ellie ,  RUBNITZ, Joshua Alan ,  CHEN, Erica ,  ASRANI, Soham Sunjay ,  BEKIARIS, Nikolaos ,  BUCHBERGER, JR., Douglas Arthur

    IPC: H01J37/32

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

    COBALT RESISTANCE RECOVERY BY HYDROGEN ANNEAL
    3.
    发明申请
    COBALT RESISTANCE RECOVERY BY HYDROGEN ANNEAL 审中-公开
    氢退火法回收钴

    公开(公告)号：WO2017161147A1

    公开(公告)日：2017-09-21

    申请号：PCT/US2017/022758

    申请日：2017-03-16

    Applicant: APPLIED MATERIALS, INC.

    Inventor： BEKIARIS, Nikolaos ,  NAIK, Mehul ,  WU, Zhiyuan

    IPC: H01L21/768

    CPC classification number: H01L21/76834 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76883 ,  H01L23/53209

    Abstract: Resistance increase in cobalt interconnects due to nitridation occurring during removal of surface oxide from cobalt interconnects and deposition of nitrogen-containing film on cobalt interconnects is solved by a hydrogen thermal anneal or plasma treatment. Removal of the nitride is through a thin overlying layer which may be a dielectric barrier layer or an etch stop layer.

    Abstract translation: 从钴互连中去除表面氧化物期间发生的氮化和钴互连上的含氮膜的沉积中钴互连的电阻增加通过氢热退火或等离子体处理来解决。 氮化物的去除是通过一个薄的覆盖层，它可能是一个电介质阻挡层或一个蚀刻停止层。

    MULTI-STEP PROCESS FOR FLOWABLE GAP-FILL FILM
    6.
    发明申请
    MULTI-STEP PROCESS FOR FLOWABLE GAP-FILL FILM 审中-公开

    公开(公告)号：WO2021167754A1

    公开(公告)日：2021-08-26

    申请号：PCT/US2021/014991

    申请日：2021-01-26

    Applicant: APPLIED MATERIALS, INC.

    Inventor： CLEMONS, Maximillian ,  BEKIARIS, Nikolaos ,  NEMANI, Srinivas D.

    IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

    Abstract: Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.

    A METHOD OF PHOTORESIST REMOVAL IN THE PRESENCE OF A DIELECTRIC LAYER HAVING A LOW K-VALUE
    7.
    发明申请
    A METHOD OF PHOTORESIST REMOVAL IN THE PRESENCE OF A DIELECTRIC LAYER HAVING A LOW K-VALUE 审中-公开
    在具有低K值的电介质层存在的光电离层去除方法

    公开(公告)号：WO2003034154A1

    公开(公告)日：2003-04-24

    申请号：PCT/US2002/031877

    申请日：2002-10-03

    Applicant: APPLIED MATERIALS, INC.

    Inventor： KAWAGUCHI, Mark, N. ,  NGUYEN, Huong, T. ,  BEKIARIS, Nikolaos ,  PAPANU, James, S.

    IPC: G03F7/42

    CPC classification number: H01L21/02063 ,  G03F7/427 ,  H01L21/31138

    Abstract: A method of photoresist removal is described. A substrate is located in a processing chamber. A mixture of gases is excited, the mixture comprising a majority component of a reducing process gas and a minority component of between 0.1% and 10% by volume of an oxidizing process gas. Reactive gas species are thereby generated. A photoresist layer with an exposed dielectric layer on the substrate in the chamber is then exposed to the reactive gas mixture to selectively remove the photoresist layer from the dielectric layer.

    Abstract translation: 描述了光致抗蚀剂去除的方法。 衬底位于处理室中。 激发气体的混合物，该混合物包含还原过程气体的主要成分和少于0.1-10体积％的氧化处理气体的少数成分。 由此产生反应性气体物质。 然后在腔室中的衬底上具有暴露的电介质层的光致抗蚀剂层暴露于反应性气体混合物以从介电层选择性地去除光致抗蚀剂层。

    METHODS OF DIELECTRIC MATERIAL FILL AND TREATMENT
    8.
    发明申请
    METHODS OF DIELECTRIC MATERIAL FILL AND TREATMENT 审中-公开

    公开(公告)号：WO2021211528A1

    公开(公告)日：2021-10-21

    申请号：PCT/US2021/027006

    申请日：2021-04-13

    Applicant: APPLIED MATERIALS, INC.

    Inventor： YOU, Shi ,  REN, He ,  YOSHIDA, Naomi ,  BEKIARIS, Nikolaos ,  NAIK, Mehul ,  SEAMONS, Martin Jay ,  LIANG, Jingmei ,  SHEK, Mei-Yee

    IPC: H01L21/768 ,  H01L21/3205 ,  H01L21/3213

    Abstract: Embodiments herein provide for oxygen-based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen-based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material

    GAP FILL DEPOSITION PROCESS
    9.
    发明申请
    GAP FILL DEPOSITION PROCESS 审中-公开

    公开(公告)号：WO2021076212A1

    公开(公告)日：2021-04-22

    申请号：PCT/US2020/046396

    申请日：2020-08-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： JIANG, Hao ,  BEKIARIS, Nikolaos ,  CHEN, Erica ,  NAIK, Mehul B.

    IPC: H01L21/768 ,  H01L21/285 ,  H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/56

    Abstract: Methods for forming an interconnections structure on a substrate in a cluster processing system and thermal processing such interconnections structure are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a barrier layer in an opening formed in a material layer disposed on a substrate, forming an interface layer on the barrier layer, forming a gap filling layer on the interface layer, and performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar.

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