METAL OVERHANG FOR ADVANCED PATTERNING
    1.
    发明申请

    公开(公告)号:WO2022039890A1

    公开(公告)日:2022-02-24

    申请号:PCT/US2021/043279

    申请日:2021-07-27

    Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The adjacent metal-containing overhang structures defining each sub-pixel of the sub-pixel circuit of the display provide for formation of the sub-pixel circuit using evaporation deposition and provide for the metal-containing overhang structures to remain in place after the sub-pixel circuit is formed (e.g., utilizing the methods of the fifth, sixth, or seventh exemplary embodiments). Evaporation deposition may be utilized for deposition of an OLED material and cathode. The metal-containing overhang structures define deposition angles, i.e., provide for a shadowing effect during evaporation deposition. The encapsulation layer of a respective sub-pixel is disposed over the cathode with the encapsulation layer extending under at least a portion of each of the adjacent metal-containing overhang structures and along a sidewall of each of the adjacent metal-containing overhang structures.

    DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING

    公开(公告)号:WO2023014897A1

    公开(公告)日:2023-02-09

    申请号:PCT/US2022/039443

    申请日:2022-08-04

    Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub- pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

    CONDUCTIVE OXIDE OVERHANG STRUCTURES FOR OLED DEVICES

    公开(公告)号:WO2022225657A1

    公开(公告)日:2022-10-27

    申请号:PCT/US2022/022191

    申请日:2022-03-28

    Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of at least one of a TCO material or a TMO material. In a second sub-configuration, the base portion includes a metal alloy material and the conductive oxide of a metal oxide surface. A second configuration of the overhang structures includes the base portion and the top portion with a body portion disposed between the base portion and the top portion. The body portion includes the metal alloy body and the metal oxide surface.

    INORGANIC SILICON-CONTAINING OVERHANG STRUCTURES OF OLED SUB-PIXELS

    公开(公告)号:WO2022051004A1

    公开(公告)日:2022-03-10

    申请号:PCT/US2021/036319

    申请日:2021-06-08

    Abstract: The present disclosure relates to overhang structures and methods of fabricating a sub-pixel circuit with the overhang structures that may be utilized in a display such as an organic light-emitting diode (OLED) display. The adjacent inorganic silicon-containing overhang structures defining each sub-pixel of the sub- pixel circuit of the display provide for formation of the sub-pixel circuit using evaporation deposition and provide for the inorganic silicon-containing overhang structures to remain in place after the sub-pixel circuit is formed. A first configuration of the inorganic silicon-containing overhang structures includes a gradient concentration profile. A second configuration of the inorganic silicon-containing overhang structures includes an upper portion and a lower portion. The inorganic silicon-containing overhang structures define deposition angles for each of the OLED material and the cathode such the OLED material does not contact sidewalls of the inorganic silicon-containing overhang structures.

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