公开(公告)号：WO2002037541A3

公开(公告)日：2002-05-10

申请号：PCT/US2001/046012

申请日：2001-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： CARDUCCI, James, D. ,  NOORBAKHSH, Hamid ,  LEE, Evans, Y. ,  PU, Bryan, Y. ,  SHAN, Hongqing ,  BJORKMAN, Claes ,  SALIMIAN, Siamak ,  LUSCHER, Paul, E. ,  WELCH, Michael, D. ,  LIU, Jingbao ,  KOMATSU, Takehiko ,  DOAN, Kenny, L. ,  CHANG, Melody ,  WANG, Zhuxu ,  KIM, Yunsang ,  WANG, Ruiping

IPC: H01L21/68

Abstract: A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy.