公开(公告)号：WO2002037541A3

公开(公告)日：2002-05-10

申请号：PCT/US2001/046012

申请日：2001-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： CARDUCCI, James, D. ,  NOORBAKHSH, Hamid ,  LEE, Evans, Y. ,  PU, Bryan, Y. ,  SHAN, Hongqing ,  BJORKMAN, Claes ,  SALIMIAN, Siamak ,  LUSCHER, Paul, E. ,  WELCH, Michael, D. ,  LIU, Jingbao ,  KOMATSU, Takehiko ,  DOAN, Kenny, L. ,  CHANG, Melody ,  WANG, Zhuxu ,  KIM, Yunsang ,  WANG, Ruiping

IPC: H01L21/68

Abstract: A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy.

公开(公告)号：WO2003038870A1

公开(公告)日：2003-05-08

申请号：PCT/US2002/030854

申请日：2002-09-30

Applicant: APPLIED MATERIALS, INC.

Inventor： LUSCHER, Paul, E. ,  CARDUCCI, James, D. ,  SALIMIAN, Siamak ,  WELCH, Michael, D.

IPC: H01L21/00

CPC classification number: H01L21/67051 ,  B08B3/04 ,  H01L21/67028 ,  Y10S134/902 ,  Y10S438/905

Abstract: The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber (102) defines a processing cavity (114) adapted to accommodate a substrate (616) therein. In one embodiment, the cleaning chamber (102) includes a chamber body having a processing cavity (114) defined therein. A substrate (616) is disposed in the processing cavity (114) without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity (114) at an angle relative to a radial line of the substrate (616) to induce and/or control rotation of the substrate during a cleaning and drying process.

Abstract translation: 本发明提供一种清洗基板的方法和装置。 清洁室（102）限定适于容纳其中的基底（616）的处理空腔（114）。 在一个实施例中，清洁室（102）包括具有限定在其中的处理空腔（114）的室主体。 衬底（616）设置在处理空腔（114）中，而不通过伯努利效应和/或通过衬底上方和/或下方的流体衬垫接触其它腔室部件。 流体相对于基底（616）的径向线以一定角度流入处理空腔（114），以在清洁和干燥过程中引起和/或控制基底的旋转。