公开(公告)号：WO2023278296A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/035078

申请日：2022-06-27

Applicant: APPLIED MATERIALS, INC.

Inventor： SHEN, Qixin ,  YANG, Chuanxi ,  YU, Hang ,  PADHI, Deenesh ,  LEE, Gill Yong ,  KANG, Sung-Kwan ,  MOHAMMED, Abdul Wahab ,  LIU, Hailing

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/32138 ,  H01L21/32139 ,  H01L21/3215 ,  H01L27/10805

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a silicon nitride hard mask layer on a ruthenium layer. Forming the silicon nitride hard mask layer on the ruthenium comprises pre-treating the ruthenium layer with a plasma to form an interface layer on the ruthenium layer; and forming a silicon nitride layer on the interface layer by plasma-enhanced chemical vapor deposition (PECVD). Pre-treating the ruthenium layer, in some embodiments, results in the interface layer having a reduced roughness and the memory device having a reduced resistivity compared to a memory device that does not include the interface layer.