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公开(公告)号：WO2021154715A1
公开(公告)日：2021-08-05
申请号：PCT/US2021/015068
申请日：2021-01-26
Applicant: APPLIED MATERIALS, INC.
Inventor： LIU, Shuwei , XIAO, Wen , JINDAL, Vibhu , ZERRADE, Azeddine
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
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公开(公告)号：WO2020214909A1
公开(公告)日：2020-10-22
申请号：PCT/US2020/028669
申请日：2020-04-17
Applicant: APPLIED MATERIALS, INC.
Inventor： XIAO, Wen , JINDAL, Vibhu , LI, Weimin , LIU, Shuwei
Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.
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公开(公告)号：WO2021222179A1
公开(公告)日：2021-11-04
申请号：PCT/US2021/029305
申请日：2021-04-27
Applicant: APPLIED MATERIALS, INC.
Inventor： LIU, Shiyu , LIU, Shuwei , JINDAL, Vibhu , ZERRADE, Azeddine
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate,; a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.
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公开(公告)号：WO2021211676A1
公开(公告)日：2021-10-21
申请号：PCT/US2021/027221
申请日：2021-04-14
Applicant: APPLIED MATERIALS, INC.
Inventor： LIU, Shuwei , JINDAL, Vibhu
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from carbon and antimony.
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公开(公告)号：WO2021195194A1
公开(公告)日：2021-09-30
申请号：PCT/US2021/023857
申请日：2021-03-24
Applicant: APPLIED MATERIALS, INC.
Inventor： LIU, Shuwei , LIU, Shiyu , ZERRADE, Azeddine , JINDAL, Vibhu
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed, The EUV mask blanks comprise a substrate,; a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.
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Patent Agency Ranking
公开(公告)号：WO2022076057A1
公开(公告)日：2022-04-14
申请号：PCT/US2021/043121
申请日：2021-07-26
Applicant: APPLIED MATERIALS, INC.
Inventor： LIU, Shuwei , LIU, Shiyu , JINDAL, Vibhu
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.
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公开(公告)号：WO2022015612A1
公开(公告)日：2022-01-20
申请号：PCT/US2021/041206
申请日：2021-07-12
Applicant: APPLIED MATERIALS, INC.
Inventor： LIU, Shuwei , LIU, Shiyu , JINDAL, Vibhu
IPC: G03F1/24 , G03F1/54 , C23C14/14 , C23C14/34 , G03F1/58 , H01L21/0332 , H01L21/0337
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.
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公开(公告)号：WO2021154714A1
公开(公告)日：2021-08-05
申请号：PCT/US2021/015067
申请日：2021-01-26
Applicant: APPLIED MATERIALS, INC.
Inventor： LIU, Shuwei , XIAO, Wen , JINDAL, Vibhu , ZERRADE, Azeddine
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
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公开(公告)号：WO2020236888A1
公开(公告)日：2020-11-26
申请号：PCT/US2020/033724
申请日：2020-05-20
Applicant: APPLIED MATERIALS, INC.
Inventor： LIU, Shuwei , JINDAL, Vibhu
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from boron and nickel.
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公开(公告)号：WO2022235545A1
公开(公告)日：2022-11-10
申请号：PCT/US2022/027232
申请日：2022-05-02
Applicant: APPLIED MATERIALS, INC.
Inventor： LIU, Shuwei , LIU, Shiyu , JINDAL, Vibhu
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise an absorber layer comprising a material selected from the group consisting of ruthenium (Ru) and one or more elements of Group 1, Ru and one or more elements of Group 1 and one or more elements of Group 2, Ru and one or more elements of Group 1 and tantalum (Ta), Ru and one or more elements of Group 1 and Ta and one or more elements of Group 2, tellurium (Te) and nickel (Ni), and tellurium (Te) and aluminum (Al).
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