公开(公告)号：WO2021076348A1

公开(公告)日：2021-04-22

申请号：PCT/US2020/054029

申请日：2020-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Philip, Hsin-Hua ,  MIYASHITA, Toshihiko ,  YIEH, Ellie ,  NEMANI, Srinivas, D. ,  RAMASWAMI, Seshadri ,  BEKIARIS, Nikolaos

IPC: H01L27/146

Abstract: Embodiments disclosed herein include CMOS image sensors and methods of forming such devices. In an embodiment, a method of forming a CMOS image sensor comprises pressurizing a chamber with a gas comprising hydrogen, and annealing a substrate in the pressurized chamber. In an embodiment the substrate comprises the CMOS image sensor. In an embodiment, the CMOS image sensor comprises a semiconductor body and a trench around a perimeter the semiconductor body, wherein the trench is filled with a high-k oxide that directly contacts the semiconductor body. In an embodiment, the method further comprises, depressurizing the chamber.