公开(公告)号：WO2023038837A1

公开(公告)日：2023-03-16

申请号：PCT/US2022/042246

申请日：2022-08-31

Applicant: APPLIED MATERIALS, INC.

Inventor： CITLA, Bhargav S. ,  ASRANI, Soham ,  RUBNITZ, Joshua ,  NEWMANI, Srinivas D. ,  YIEH, Ellie Y.

IPC: H01L21/02 ,  H01L21/311

Abstract: Exemplary processing methods may include forming a plasma of a. silicon- containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma, effluents of the silicon-containing precursor. The processing region may be at least partially defined between a. faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen -containing precursor. Tire methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma, effluents of the hydrogen -containing precursor.