公开(公告)号：WO2021021343A1

公开(公告)日：2021-02-04

申请号：PCT/US2020/039093

申请日：2020-06-23

Applicant: APPLIED MATERIALS, INC.

Inventor： DUKOVIC, John O. ,  NEMANI, Srinivas D. ,  YIEH, Ellie Y. ,  GOPALRAJA, Praburam ,  WELCH, Steven Hiloong ,  CITLA, Bhargav S.

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12

Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.

公开(公告)号：WO2021055918A1

公开(公告)日：2021-03-25

申请号：PCT/US2020/051719

申请日：2020-09-21

Applicant: APPLIED MATERIALS, INC.

Inventor： CITLA, Bhargav S. ,  TANNOS, Jethro ,  NEMANI, Srinivas D. ,  RUBNITZ, Joshua

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32

Abstract: Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on a substrate in a presence of the first gas mixture and the first radicals; terminating the first remote plasma and applying a first RF bias power to the processing chamber to form a first bias plasma; contacting the layer of dielectric material with the first bias plasma to form a first treated layer of dielectric material; and subsequently forming a second remote plasma comprising second radicals in the remote plasma source and delivering the second radicals to the interior processing region in a presence of a second gas mixture while applying a second RF bias power to form a second bias plasma, wherein the second radicals and second bias plasma contact the first treated layer of dielectric material to increase a hydrophobicity or a flowability of the first treated layer of dielectric material.

公开(公告)号：WO2021003031A1

公开(公告)日：2021-01-07

申请号：PCT/US2020/038718

申请日：2020-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： CITLA, Bhargav S. ,  RUBNITZ, Joshua ,  TANNOS, Jethro ,  NEMANI, Srinivas D. ,  RAMASWAMY, Kartik ,  YANG, Yang

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

公开(公告)号：WO2021127123A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/065521

申请日：2020-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： SHEK, Mei-Yee ,  CITLA, Bhargav S. ,  RUBNITZ, Joshua ,  TANNOS, Jethro ,  YING, Chentsau Chris ,  NEMANI, Srinivas D. ,  YIEH, Ellie Y.

IPC: C23C16/36 ,  C23C16/04 ,  C23C16/505 ,  C01B21/0828 ,  C09D1/00 ,  C23C16/4408 ,  C23C16/50

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：WO2023038837A1

公开(公告)日：2023-03-16

申请号：PCT/US2022/042246

申请日：2022-08-31

Applicant: APPLIED MATERIALS, INC.

Inventor： CITLA, Bhargav S. ,  ASRANI, Soham ,  RUBNITZ, Joshua ,  NEWMANI, Srinivas D. ,  YIEH, Ellie Y.

IPC: H01L21/02 ,  H01L21/311

Abstract: Exemplary processing methods may include forming a plasma of a. silicon- containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma, effluents of the silicon-containing precursor. The processing region may be at least partially defined between a. faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen -containing precursor. Tire methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma, effluents of the hydrogen -containing precursor.

公开(公告)号：WO2020060712A1

公开(公告)日：2020-03-26

申请号：PCT/US2019/047343

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： CITLA, Bhargav S. ,  TANNOS, Jethro ,  LI, Jingyi ,  BUCHBERGER, Douglas A. Jr. ,  HUA, Zhong Qiang ,  NEMANI, Srinivas D. ,  YIEH, Ellie Y.

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/455 ,  H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.