公开(公告)号：WO2023014458A1

公开(公告)日：2023-02-09

申请号：PCT/US2022/036138

申请日：2022-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Chen-Ying ,  YE, Zhiyuan ,  LI, Xuebin ,  CHARY, Sathya ,  HUANG, Yi-Chiau ,  CHOPRA, Saurabh

IPC: H01L21/02 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66

Abstract: Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly surfaces with reduced or negligible growth on surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.

公开(公告)号：WO2022155572A1

公开(公告)日：2022-07-21

申请号：PCT/US2022/012672

申请日：2022-01-17

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Chen-Ying ,  HUANG, Yi-Chiau

IPC: H01L21/02

Abstract: Methods for depositing a silicon germanium tin boron (SiGeSn:B) film on a substrate are described. The method comprises exposing a substrate to a precursor mixture comprising a boron precursor, a silicon precursor, a germanium precursor, and a tin precursor to form a boron silicon germanium tin (SiGeSn:B) film on the substrate.

公开(公告)号：WO2022164566A1

公开(公告)日：2022-08-04

申请号：PCT/US2021/065539

申请日：2021-12-29

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Chen-Ying ,  DUBE, Abhishek ,  HUANG, Yi-Chiau

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66

Abstract: A method for the selective formation of epitaxial layers is described herein. In the method, epitaxial layers are deposited to form source and drain regions around a horizontal gate all around (hGAA structure). The method includes co-flowing a combination of chlorinated silicon containing precursors, antimony containing precursors, and n-type dopant precursors. The resulting source and drain regions are selectively grown from crystalline nanosheets or nanowires of the hGAA structure over the non-crystalline gate structure and dielectric layers. The source and drain regions are predominantly grown in a direction.

公开(公告)号：WO2022103626A1

公开(公告)日：2022-05-19

申请号：PCT/US2021/057770

申请日：2021-11-02

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Chen-Ying ,  HUANG, Yi-Chiau ,  YE, Zhiyuan ,  CHU, Schubert S. ,  SANCHEZ, Errol Antonio C. ,  BURROWS, Brian Hayes

IPC: C30B33/12 ,  C30B33/02 ,  C30B25/02 ,  C30B29/06

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

公开(公告)号：WO2022250825A1

公开(公告)日：2022-12-01

申请号：PCT/US2022/026366

申请日：2022-04-26

Applicant: APPLIED MATERIALS, INC.

Inventor： HUANG, Yi-Chiau ,  LEE, Songjae ,  VELLAIKAL, Manoj ,  WU, Chen-Ying ,  DAVEY, Eric ,  CHOPRA, Saurabh

IPC: H01L21/67 ,  C30B25/18 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to an integrated substrate processing system for cleaning a substrate surface and subsequently performing an epitaxial deposition process thereon. A processing system includes a film formation chamber, a transfer chamber coupled to the film formation chamber, and an oxide removal chamber coupled to the transfer chamber, the oxide removal chamber having a substrate support. The processing system includes a controller configured to introduce a process gas mixture into the oxide removal chamber, the process gas mixture including a fluorine-containing gas and a vapor including at least one of water, an alcohol, an organic acid, or combinations thereof. The controller is configured to expose a substrate positioned on the substrate support to the process gas mixture, thereby removing an oxide film from the substrate.

公开(公告)号：WO2021167752A1

公开(公告)日：2021-08-26

申请号：PCT/US2021/014916

申请日：2021-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： CHEN, Papo ,  CHU, Schubert S. ,  SANCHEZ, Errol Antonio C. ,  BOLAND, John Timothy ,  YE, Zhiyuan ,  WASHINGTON, Lori ,  TAO, Xianzhi ,  HUANG, Yi-Chiau ,  WU, Chen-Ying

IPC: H01L27/146

Abstract: A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

公开(公告)号：WO2020252065A1

公开(公告)日：2020-12-17

申请号：PCT/US2020/037052

申请日：2020-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： HUANG, Yi-Chiau ,  WU, Chen-Ying ,  DUBE, Abhishek ,  CHIN, Chia Cheng ,  CHOPRA, Saurabh

IPC: H01L21/02 ,  H01L21/8238

Abstract: One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.