公开(公告)号：WO2020185391A1

公开(公告)日：2020-09-17

申请号：PCT/US2020/019627

申请日：2020-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： FREED, Regina ,  SHERMAN, Steven R. ,  ALEXIS, Nadine ,  ZHOU, Lin

IPC: H01L21/027 ,  H01L21/311

Abstract: Disclosed are methods for reducing transfer pattern defects in a semiconductor device. In some embodiments, a method includes providing a semiconductor device including a plurality of photoresist lines on a stack of layers, wherein the plurality of photoresist lines includes a bridge defect extending between two or more photoresist lines of the plurality of photoresist lines. The method may further include forming a plurality of mask lines by etching a set of trenches in a first layer of the stack of layers, and removing the bridge defect by etching the bridge defect at a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the stack of layers.

公开(公告)号：WO2019217463A1

公开(公告)日：2019-11-14

申请号：PCT/US2019/031178

申请日：2019-05-07

Applicant: APPLIED MATERIALS, INC.

Inventor： ZHANG, Ying ,  ZHOU, Lin

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/67 ,  G03F7/20

Abstract: Methods for patterning a film stack are provided. In one embodiment, a method for patterning a film stack disposed on a substrate includes performing a first etching process to etch a film stack disposed on a substrate, wherein the film stack includes a patterned photoresist layer disposed on an upper layer on a lower layer disposed on the substrate, wherein the patterned photoresist layer comprises openings defined between features and the features have a first pitch, wherein the first etching process removes between about 40 percent and about 95 percent of the lower layer exposed by the patterned photoresist layer from the film stack, performing a second etching process on the film stack, and upon completion of the second etching process, transferring the features into the upper or lower layer in the film stack having a second pitch, wherein the second pitch is shorter than the first pitch.