公开(公告)号：WO2022139994A1

公开(公告)日：2022-06-30

申请号：PCT/US2021/059953

申请日：2021-11-18

Applicant: APPLIED MATERIALS, INC.

Inventor： BAGBY, Lauren ,  WEEKS, Stephen ,  DANGERFIELD, Aaron ,  KALUTARAGE, Lakmal ,  ANTHIS, Jeffrey ,  SALY, Mark ,  FREED, Regina ,  FRENCH, Wayne ,  CHAN, Kelvin

IPC: G03F7/16 ,  C23C14/12 ,  C23C14/34 ,  C23C14/58 ,  G03F7/004

Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.

公开(公告)号：WO2022005808A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038424

申请日：2021-06-22

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  SALY, Mark, Joseph ,  BHUYAN, Bhaskar, Jyoti ,  SACHAN, Madhur ,  FREED, Regina

IPC: G03F7/36 ,  G03F7/004 ,  C23F4/02 ,  H01L21/32135

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

公开(公告)号：WO2022005877A8

公开(公告)日：2022-01-06

申请号：PCT/US2021/038978

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  DANGERFIELD, Aaron ,  SALY, Mark, Joseph ,  THOMPSON, David, Michael ,  SINGHA ROY, Susmit ,  FREED, Regina

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45538 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/167 ,  G03F7/168

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：WO2022005877A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038978

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  DANGERFIELD, Aaron ,  SALY, Mark, Joseph ,  THOMPSON, David, Michael ,  SINGHA, Roy, Susmit ,  FREED, Regina

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45538 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/167 ,  G03F7/168

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：WO2020185391A1

公开(公告)日：2020-09-17

申请号：PCT/US2020/019627

申请日：2020-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： FREED, Regina ,  SHERMAN, Steven R. ,  ALEXIS, Nadine ,  ZHOU, Lin

IPC: H01L21/027 ,  H01L21/311

Abstract: Disclosed are methods for reducing transfer pattern defects in a semiconductor device. In some embodiments, a method includes providing a semiconductor device including a plurality of photoresist lines on a stack of layers, wherein the plurality of photoresist lines includes a bridge defect extending between two or more photoresist lines of the plurality of photoresist lines. The method may further include forming a plurality of mask lines by etching a set of trenches in a first layer of the stack of layers, and removing the bridge defect by etching the bridge defect at a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the stack of layers.

公开(公告)号：WO2022005855A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038758

申请日：2021-06-23

Applicant: APPLIED MATERIALS, INC.

Inventor： DAI, Yuqiong ,  SACHAN, Madhur ,  FREED, Regina ,  HWANG, Hoyung, David

IPC: G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  C23C16/06 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/162 ,  G03F7/40

Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

公开(公告)号：WO2021252229A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/035336

申请日：2021-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： FENG, Lili ,  DAI, Yuqiong ,  SACHAN, Madhur ,  FREED, Regina ,  HWANG, Ho-yung David

IPC: H01L21/3213 ,  H01L21/033 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/76885 ,  H01L23/5226

Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.

公开(公告)号：WO2020092204A1

公开(公告)日：2020-05-07

申请号：PCT/US2019/058289

申请日：2019-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： KESAPRAGADA, Sree Rangasai ,  BAKKE, Jonathan R. ,  LEE, Joung Joo ,  MEBARKI, Bencherki ,  NGAI, Christopher ,  FREED, Regina ,  THAREJA, Gaurav ,  SINGH, Tejinder ,  FERNANDEZ, Jorge Pablo

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/306 ,  H01L21/768

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a non-perpendicular angle to the plane of the surface to selectively deposit the material on a top portion of one or more features on the substrate and form an overhang extending beyond a first sidewall of the one or more features; and etching a first layer of the substrate beneath the one or more features selective to the deposited material.

公开(公告)号：WO2019118684A1

公开(公告)日：2019-06-20

申请号：PCT/US2018/065379

申请日：2018-12-13

Applicant: APPLIED MATERIALS, INC.

Inventor： MULLICK, Amrita B. ,  MALLICK, Abhijit Basu ,  GANDIKOTA, Srinivas ,  ROY, Susmit Singha ,  RAO, Yingli ,  FREED, Regina ,  MITRA, Uday

IPC: H01L21/3213 ,  H01L21/306 ,  H01L21/027 ,  H01L21/67

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.