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    METHOD FOR DECOUPLING SOURCES OF VARIATION RELATED TO SEMICONDUCTOR MANUFACTURING
    2.
    发明申请
    METHOD FOR DECOUPLING SOURCES OF VARIATION RELATED TO SEMICONDUCTOR MANUFACTURING 审中-公开

    公开(公告)号：WO2023280486A1

    公开(公告)日：2023-01-12

    申请号：PCT/EP2022/065027

    申请日：2022-06-02

    Applicant: ASML NETHERLANDS B.V.

    Inventor： FREEMAN, Jill, Elizabeth ,  JAIN, Vivek, Kumar ,  PAO, Kuo-Feng ,  TEL, Wim, Tjibbo

    IPC: G03F7/20

    Abstract: Described herein is a method for determining process drifts or outlier wafers over time in semiconductor manufacturing. The method involves obtaining a key performance indicator (KPI) variation (e.g., LCDU) characterizing a performance of a semiconductor process over time, and data associated with a set of factors associated with the semiconductor process. A model of the KPI and the data is used to determine contributions of a first set of factors toward the KPI variation, the first set of factors breaching a statistical threshold. The contributions from the first set of factors toward the the KPI variation is removed from the model to obtain a residual KPI variation. Based on the residual KPI variation, a residual value breaching a residual threshold is determined. The residual value indicates process drifts in the semiconductor process over time or an outlier substrate corresponding to the residual value at a certain time.

    METHODS FOR DEFECT VALIDATION
    3.
    发明申请
    METHODS FOR DEFECT VALIDATION 审中-公开
    缺陷验证方法

    公开(公告)号：WO2016202546A1

    公开(公告)日：2016-12-22

    申请号：PCT/EP2016/061847

    申请日：2016-05-25

    Applicant: ASML NETHERLANDS B.V.

    Inventor： HUNSCHE, Stefan ,  ALDANA LASO, Rafael ,  JAIN, Vivek, Kumar ,  JOCHEMSEN, Marinus ,  ZHOU, Xinjian

    IPC: G03F7/20

    CPC classification number: G03F7/7065 ,  G06T3/0068 ,  G06T7/001 ,  G06T2207/30148

    Abstract: A computer-implemented method of defect validation for a device manufacturing process, the method comprising: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.

    Abstract translation: 一种用于设备制造过程的计算机实现的缺陷验证方法，所述方法包括：使用所述设备制造过程在第一条件下获得处理到衬底上的区域中的图案的第一图像; 从该地区获取计量图像; 对准测量图像和第一图像; 以及基于一个或多个分类标准，从所述第一图像和所述测量图像确定所述区域是否包含缺陷。

    PROCESS VARIABILITY AWARE ADAPTIVE INSPECTION AND METROLOGY
    4.
    发明申请
    PROCESS VARIABILITY AWARE ADAPTIVE INSPECTION AND METROLOGY 审中-公开
    过程变异性自适应检测和计量学

    公开(公告)号：WO2016128189A1

    公开(公告)日：2016-08-18

    申请号：PCT/EP2016/051073

    申请日：2016-01-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： VELLANKI, Venugopal ,  JAIN, Vivek, Kumar ,  HUNSCHE, Stefan

    IPC: G03F7/20

    CPC classification number: G03F7/7065 ,  G03F1/60 ,  G03F1/84 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70641 ,  G03F7/70666 ,  G06N99/005

    Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, existence, probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

    Abstract translation: 本文公开了一种用于将衬底上的一个或多个图案处理的器件制造工艺的计算机实现的缺陷预测方法，该方法包括：确定处理一个或多个图案的一个或多个处理参数的值; 以及使用所述一个或多个处理参数的值，存在，存在概率，特征，和/或从上述选择的组合来确定或预测由所述设备生成所述一个或多个图案所导致的缺陷 制造工艺。

    DETERMINING HOT SPOT RANKING BASED ON WAFER MEASUREMENT
    5.
    发明申请
    DETERMINING HOT SPOT RANKING BASED ON WAFER MEASUREMENT 审中-公开

    公开(公告)号：WO2020064544A1

    公开(公告)日：2020-04-02

    申请号：PCT/EP2019/075326

    申请日：2019-09-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： ZHANG, Youping ,  HU, Weixuan ,  YAN, Fei ,  PENG, Wei ,  JAIN, Vivek, Kumar

    IPC: G03F7/20

    Abstract: A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots, generated by the simulation, based on the measurement feedback.

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