公开(公告)号：WO2018069015A1

公开(公告)日：2018-04-19

申请号：PCT/EP2017/073866

申请日：2017-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： FRISCO, Pierluigi ,  MATOVA, Svetla, Petrova ,  WILDENBERG, Jochem, Sebastiaan

IPC: G03F9/02 ,  G03F7/207 ,  G03F9/00 ,  G03F7/00 ,  G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70616 ,  G03F7/70641 ,  G03F9/7026 ,  G03F9/7046 ,  G03F9/7076 ,  G03F9/7084

Abstract: A method for selecting an optimal set of locations for a measurement or feature on a substrate includes: (302): Defining constraints, and optionally cost function(s). (306): Defining a first candidate solution of locations. (308): Defining a second candidate solution with locations based on modification of a coordinate in a solution domain of the first candidate solution. This may involve duplication, mutation and cross-over. (310): Determine a value of a cost function associated with a required measurement accuracy or feature layout on the substrate. (312): Selecting the first and/or second candidate solution as the optimal solution according to a constraint associated with the substrate and optionally according to the value of the cost function. (314): If the constraints are satisfied and the value of a cost function has converged, or if a number of iterations has been reached, then the iterations end.

Abstract translation: 用于为衬底上的测量或特征选择最佳位置组的方法包括：（302）：定义约束和可选的成本函数。 （306）：定义第一候选解决方案的位置。 （308）：基于对第一候选解的解域中的坐标的修改来定义具有位置的第二候选解。 这可能涉及重复，变异和交叉。 （310）：确定与衬底上的所需测量精度或特征布局相关联的成本函数的值。 （312）：根据与基板相关联的约束并且可选地根据成本函数的值来选择第一和/或第二候选解作为最优解。 （314）：如果约束满足并且成本函数的值已经收敛，或者如果已经达到迭代次数，则迭代结束。

公开(公告)号：WO2018059824A1

公开(公告)日：2018-04-05

申请号：PCT/EP2017/070825

申请日：2017-08-17

Applicant: ASML NETHERLANDS B.V.

Inventor： BHATTACHARYYA, Kaustuve ,  DEN BOEF, Arie, Jeffrey ,  JAK, Martin, Jacobus, Johan

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G02F2202/023 ,  G03F7/705 ,  G03F7/70641

Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.

Abstract translation: 包括评估用于测量使用图案化工艺处理的度量衡目标的多个基板测量配方，针对堆叠灵敏度和覆盖灵敏度，以及从多个基板选择一个或多个基板测量配方 测量配方的堆栈灵敏度值满足或超过阈值，并且覆盖灵敏度的值在覆盖灵敏度的最大值或最小值的某个有限范围内。

公开(公告)号：WO2018046265A1

公开(公告)日：2018-03-15

申请号：PCT/EP2017/070763

申请日：2017-08-16

Applicant: ASML NETHERLANDS B.V.

Inventor： VERSTRAETEN, Bert ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining, by a computer system, a value pertaining to the patterning process based on the results of the first and second measurements.

Abstract translation: 一种评估构图过程的方法，该方法包括：获得第一度量衡目标的第一测量结果; 获得第二度量衡目标的第二测量结果，第二度量衡目标具有与第一度量衡目标的结构差异，所述第二度量衡量目标产生第一和第二测量目标之间的图案化过程的过程参数的灵敏度差异和/或偏移量 度量衡目标; 以及由计算机系统基于第一和第二测量的结果确定与图案化过程有关的值。

公开(公告)号：WO2017016839A1

公开(公告)日：2017-02-02

申请号：PCT/EP2016/066110

申请日：2016-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank ,  LUIJTEN, Carlo, Cornelis, Maria ,  HINNEN, Paul, Christiaan ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G01B11/02 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70625 ,  G03F7/70641

Abstract: Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

Abstract translation: 公开了一种监测光刻工艺参数的方法，例如光刻工艺的焦点和/或剂量。 该方法包括分别采用第一测量配置和第二测量配置获取第一和第二目标测量，以及根据从所述第一目标测量和所述第二目标测量导出的第一度量来确定光刻处理参数。 第一个度量可能是不同的。 还公开了相应的测量和光刻设备，计算机程序和制造设备的方法。

公开(公告)号：WO2016107508A1

公开(公告)日：2016-07-07

申请号：PCT/CN2015/099085

申请日：2015-12-27

Applicant: 上海微电子装备有限公司

Inventor： 齐景超 ,  陈飞彪

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G01B11/0608 ,  G01B11/26 ,  G03F9/7026 ,  G03F9/7034

Abstract: 一种自适应沟槽的调焦调平装置，用于测量被测物体（400）的表面的高度和倾斜度，被测物体（400）的表面具有周期性的沟槽（401）且由一运动台承载，该调焦调平装置依次包括照明单元、投影单元、探测单元及探测器（212），所述被测物体（400）沿光路位于投影单元和探测单元之间，所述投影单元包括投影狭缝（203），用于在被测物体（400）上形成多个测量点（501），且每个测量点（501）包括至少三个测量子光斑（502），其中，所述至少三个测量子光斑（502）以不等间距排列的方式设置，使得当所述多个测量点（501）投影在被测物体（400）的表面时，每个测量点（501）的所述至少三个测量子光斑（502）中的至少两个能够位于沟槽（401）外，从而测量被测物体（400）的表面的高度和倾斜度。

公开(公告)号：WO2016045901A1

公开(公告)日：2016-03-31

申请号：PCT/EP2015/069541

申请日：2015-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEN, Gang ,  DE VOCHT, Joseph, Werner ,  DU, Yuelin ,  LI, Wanyu ,  LU, Yen-Wen

IPC: G03F7/20

CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70666

Abstract: Disclosed herein is a computer-implemented method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method comprising: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.

Abstract translation: 本文公开了一种计算机实现的方法，用于确定用于将部分成像到衬底上的器件制造工艺的设计布局的一部分上的感兴趣区域的重叠处理窗口（OPW），该方法包括：获得多个 特征在感兴趣的领域; 获得所述设备制造过程的一个或多个处理参数的多个值; 通过在多个值中的每一个值下的设备制造过程来确定存在缺陷，存在缺陷的概率或两者在成像多个特征; 从缺陷的存在，存在缺陷的概率或两者确定感兴趣区域的OPW。

公开(公告)号：WO2015197260A1

公开(公告)日：2015-12-30

申请号：PCT/EP2015/060618

申请日：2015-05-13

Applicant: ASML NETHERLANDS B.V.

Inventor： BASELMANS, Johannes, Jacobus, Matheus ,  BUTLER, Hans ,  HOOGENDAM, Christiaan, Alexander ,  KERSSEMAKERS, Sander ,  SMEETS, Bart ,  VAN BALLEGOIJ, Robertus, Nicodemus, Jacobus ,  VAN BUSSEL, Hubertus, Petrus, Leonardus, Henrica

IPC: G03F7/20 ,  G02B13/14

CPC classification number: G03F7/70258 ,  G03F7/70066 ,  G03F7/70141 ,  G03F7/70641

Abstract: A method of modifying a lithographic apparatus comprising an illumination system for providing a radiation beam, a support structure for supporting a patterning device to impart the radiation beam with a pattern in its cross-section, a first lens for projecting the radiation beam at the patterning device with a first magnification, a substrate table for holding a substrate, and a first projection system for projecting the patterned radiation beam at a target portion of the substrate with a second magnification. The first lens and the first projection system together provide a third magnification. The method comprises reducing by a first factor the first magnification to provide a second lens for projecting the radiation beam with a fourth magnification; and increasing by the first factor the second magnification to provide a second projection system for projecting the patterned radiation beam at the target portion of the substrate with a fifth magnification.

Abstract translation: 一种修改包括用于提供辐射束的照明系统的光刻设备的方法，用于支撑图案形成装置以将辐射束赋予其横截面图案的支撑结构，用于将辐射束投射在图案化处的第一透镜 具有第一放大率的装置，用于保持基板的基板台，以及用于以第二倍率将图案化的辐射束投影在基板的目标部分的第一投影系统。 第一透镜和第一投影系统一起提供第三放大率。 该方法包括以第一因子减小第一倍率以提供用于以第四放大率投影辐射束的第二透镜; 并且通过第一因子增加第二倍率以提供第二投影系统，用于以第五放大率将图案化的辐射束投影到基板的目标部分。

公开(公告)号：WO2015158444A1

公开(公告)日：2015-10-22

申请号：PCT/EP2015/053099

申请日：2015-02-13

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  LIU, Xiaofeng

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70

CPC classification number: G03F7/70641 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70191 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70558

Abstract: Disclosed herein is a computer-implemented method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illumination source and projection optics, the method comprising: obtaining a source shape and a mask defocus value; optimizing a dose of the lithographic process; optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

Abstract translation: 本文公开了一种计算机实现的方法，用于使用包括照明源和投影光学器件的光刻投影设备来改进用于将设计布局的一部分成像到基板上的光刻处理，该方法包括：获得源形状和掩模散焦值 ; 优化光刻工艺的剂量; 优化照明源的多个狭缝位置中的每一个的设计布局的部分。

公开(公告)号：WO2014082938A1

公开(公告)日：2014-06-05

申请号：PCT/EP2013/074516

申请日：2013-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VANOPPEN, Peter ,  BROUWER, Eric ,  CRAMER, Hugo ,  DEN BESTEN, Jan ,  ENGELEN, Adrianus ,  HINNEN, Paul

IPC: G03F7/20

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法。 使用光刻工艺在衬底上产生第一结构，第一结构具有剂量敏感特征，其具有取决于光刻设备在衬底上的曝光剂量的形式。 使用光刻工艺在衬底上产生第二结构，第二结构具有剂量敏感特征，其具有取决于光刻设备的曝光剂量但与第一结构具有不同于曝光剂量的灵敏度的形式 。 检测散射辐射，同时用辐射照射第一和第二结构，以获得第一和第二散射仪信号。 使用第一和第二散射仪信号来确定用于产生第一和第二结构中的至少一个的曝光剂量值。

公开(公告)号：WO2014082813A2

公开(公告)日：2014-06-05

申请号：PCT/EP2013072719

申请日：2013-10-30

Applicant: ASML NETHERLANDS BV

Inventor： GROOTJANS WILLEM JAN ,  GARCIA GRANDA MIGUEL ,  KRIST JOUKE ,  MEGENS HENRICUS ,  XU LU

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

CPC classification number: G01N21/95607 ,  G01N21/47 ,  G01N2021/4792 ,  G01N2201/06113 ,  G01N2201/12 ,  G03F7/70133 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

Abstract: Method for determining lithographic quality of a structure produced by a lithographic process using a periodic pattern, such as a grating, detects lithographic process window edges and optimum process conditions. Method steps are: 602: printing a structure using a lithographic process using a grating pattern; 604: selecting a first characteristic, such as a polarization direction, for the illumination; 606: illuminating the structure with incident radiation with the first characteristic; 608: detecting scattered radiation; 610: selecting a second characteristic, such as a different polarization direction, for the illumination; 612: illuminating the structure with incident radiation with the second characteristic; 614: detecting scattered radiation; 616: rotating one or more angularly resolved spectrum to line up the polarizations, thus correcting for different orientations of the polarizations; 618: determining a difference between the measured angularly resolved spectra; and 620: determining a value of lithographic quality of the structure using the determined difference.

Abstract translation: 用于通过使用诸如光栅的周期性图案的光刻处理产生的结构的光刻质量的方法检测光刻工艺窗口边缘和最佳工艺条件。 方法步骤是：602：使用光栅图案使用光刻工艺印刷结构; 604：为照明选择诸如偏振方向的第一特性; 606：用具有第一特征的入射辐射照射结构; 608：检测散射辐射; 610：为照明选择诸如不同偏振方向的第二特性; 612：用具有第二特征的入射辐射照射结构; 614：检测散射辐射; 616：旋转一个或多个角度分辨的光谱以对齐偏振，从而校正偏振的不同取向; 618：确定测得的角度分辨光谱之间的差异; 和620：使用确定的差异来确定结构的平版印刷质量的值。