公开(公告)号：WO2023285071A1

公开(公告)日：2023-01-19

申请号：PCT/EP2022/066586

申请日：2022-06-17

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  JIANG, Xiaohui ,  JIA, Ningning ,  LIU, Gengxin

IPC: G03F7/20 ,  G03F1/36

Abstract: Apparatuses, systems, and methods for selecting a subset of critical patterns from a plurality of patterns of a design layout. In some embodiments, the method comprising accessing diffraction order data based on the plurality of patterns that represent features to be formed on at least a portion of a wafer, the diffraction order data including a plurality of peaks corresponding to the plurality of patterns. The method also comprises identifying a subset of representative peaks from the plurality of peaks according to one or more grouping criteria, comprising identifying a first representative peak that covers another peak colinear with the first representative peak, wherein the first representative peak is a discrete peak having a frequency that is an integer multiple of frequency of another discrete peak. The method further comprises selecting the subset of critical patterns corresponding to the subset of representative peaks.

公开(公告)号：WO2020108902A1

公开(公告)日：2020-06-04

申请号：PCT/EP2019/079562

申请日：2019-10-29

Applicant: ASML NETHERLANDS B.V.

Inventor： BISWAS, Roshni ,  HOWELL, Rafael C. ,  ZHANG, Cuiping ,  JIA, Ningning ,  LIU, Jingjing ,  ZHANG, Quan

IPC: G03F1/36 ,  G03F7/20

Abstract: Described herein is a method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.