公开(公告)号：WO2023285071A1

公开(公告)日：2023-01-19

申请号：PCT/EP2022/066586

申请日：2022-06-17

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  JIANG, Xiaohui ,  JIA, Ningning ,  LIU, Gengxin

IPC: G03F7/20 ,  G03F1/36

Abstract: Apparatuses, systems, and methods for selecting a subset of critical patterns from a plurality of patterns of a design layout. In some embodiments, the method comprising accessing diffraction order data based on the plurality of patterns that represent features to be formed on at least a portion of a wafer, the diffraction order data including a plurality of peaks corresponding to the plurality of patterns. The method also comprises identifying a subset of representative peaks from the plurality of peaks according to one or more grouping criteria, comprising identifying a first representative peak that covers another peak colinear with the first representative peak, wherein the first representative peak is a discrete peak having a frequency that is an integer multiple of frequency of another discrete peak. The method further comprises selecting the subset of critical patterns corresponding to the subset of representative peaks.