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    ON CHIP SENSOR FOR WAFER OVERLAY MEASUREMENT
    1.
    发明申请
    ON CHIP SENSOR FOR WAFER OVERLAY MEASUREMENT 审中-公开

    公开(公告)号：WO2021037509A1

    公开(公告)日：2021-03-04

    申请号：PCT/EP2020/072063

    申请日：2020-08-05

    Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

    Inventor： SWILLAM, Mohamed ,  ROUX, Stephen ,  ELAZHARY, Tamer, Mohamed, Tawfik, Ahmed, Mohamed ,  DEN BOEF, Arie, Jeffrey

    IPC: G03F7/20 ,  H01L31/0232 ,  G02B6/42

    Abstract: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

    METROLOGY MARK STRUCTURE AND METHOD OF DETERMINING METROLOGY MARK STRUCTURE
    2.
    发明申请
    METROLOGY MARK STRUCTURE AND METHOD OF DETERMINING METROLOGY MARK STRUCTURE 审中-公开

    公开(公告)号：WO2021073854A1

    公开(公告)日：2021-04-22

    申请号：PCT/EP2020/076986

    申请日：2020-09-25

    Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

    Inventor： ELAZHARY, Tamer, Mohamed, Tawfik, Ahmed, Mohamed ,  SOCHA, Robert, John ,  ROUX, Stephen ,  HUISMAN, Simon, Reinald

    IPC: G03F7/20 ,  G03F9/00

    Abstract: Described herein is a structure of the semiconductor device with a sub-segmented grating structure as a metrology mark and a method for configuring the metrology mark. A method for configuring a metrology mark may be used in a lithography process. The method includes determining an initial characteristic function of an initial metrology mark disposed within a layer stack. The method also includes perturbing one or more variables of the plurality of subsegments of the metrology mark (e.g., pitch, duty cycle, and/or line width of the plurality of subsegments) and further perturbing a thickness of one or more layers within the layer stack. The method further includes iteratively performing the perturbations until a minimized characteristic function of an initial metrology mark is determined to set a configuration for the plurality of subsegments.

    PATTERNING DEVICE SUPPORT AND LITHOGRAPHIC APPARATUS
    4.
    发明申请
    PATTERNING DEVICE SUPPORT AND LITHOGRAPHIC APPARATUS 审中-公开
    绘图设备支持和平面设备

    公开(公告)号：WO2014063874A1

    公开(公告)日：2014-05-01

    申请号：PCT/EP2013/069654

    申请日：2013-09-23

    Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

    Inventor： SINHAROY, Arindam ,  ROUX, Stephen ,  VAN DAMME, Jean-Philippe, ,  BURBANK, Daniel, ,  SCHUSTER, Mark, ,  HARRIS, Duncan ,  WARD, Christopher

    IPC: G03F7/20

    CPC classification number: G03F7/70733 ,  G03F7/707 ,  G03F7/70783

    Abstract: A patterning device support (200), for example, a patterning device (202) or substrate support, can be configured to release internal stresses of a patterning device loaded thereon. The patterning device support can include a positive pressuring generating interface (206a, 206b) or an acoustic vibration generating interface (206a, 206b), or can be configured to oscillate while at least a portion of patterning device is decoupled from the patterning device support. A method of transferring a patterning device between a patterning device handling apparatus and a patterning device support configured to move the patterning device can include positioning the patterning device onto a surface of the patterning device support, and performing a process that releases internal stress of the patterning device.

    Abstract translation: 图案形成装置支撑件（200），例如，图案形成装置（202）或基板支撑件可以构造成释放装载在其上的图案形成装置的内部应力。 图案形成装置支撑件可以包括正压力生成界面（206a，206b）或声振动产生界面（206a，206b），或者可以被配置为在图案形成装置的至少一部分与图案形成装置支撑件分离的同时进行摆动。 在图案形成装置处理装置和被构造成移动图案形成装置的图案形成装置支撑件之间传送图案形成装置的方法可以包括将图案形成装置定位在图案形成装置支撑件的表面上，并且执行释放图案形成装置的内部应力 设备。

    QUANTITATIVE RETICLE DISTORTION MEASUREMENT SYSTEM
    5.
    发明申请
    QUANTITATIVE RETICLE DISTORTION MEASUREMENT SYSTEM 审中-公开
    量化误差测量系统

    公开(公告)号：WO2014048654A1

    公开(公告)日：2014-04-03

    申请号：PCT/EP2013/067673

    申请日：2013-08-27

    Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

    Inventor： CHIEDA, Michael, ,  ROUX, Stephen ,  DE WILT, Teun ,  AARTS, Igor

    IPC: G03F7/20

    CPC classification number: G03F7/70191 ,  G01B11/2513 ,  G01D5/347 ,  G03F7/70716 ,  G03F7/70783 ,  G03F7/7085

    Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support constructed to hold a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus further includes an encoder head designed to scan over a surface of the patterning device to determine a distortion in a first direction along a length of the patterning device and a distortion in a second direction substantially perpendicular to the surface of the patterning device.

    Abstract translation: 光刻设备包括配置成调节辐射束的照明系统，构造成保持图案形成装置的支撑件，所述图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束，衬底 被构造成保持衬底的工作台以及配置成将图案化的辐射束投影到衬底的目标部分上的投影系统。 光刻设备还包括编码器头，其设计成在图案形成装置的表面上扫描以确定沿着图案形成装置的长度的第一方向的变形和基本上垂直于图案形成装置的表面的第二方向的变形。

    MONOLITHIC PARTICLE INSPECTION DEVICE
    6.
    发明申请
    MONOLITHIC PARTICLE INSPECTION DEVICE 审中-公开

    公开(公告)号：WO2021259646A1

    公开(公告)日：2021-12-30

    申请号：PCT/EP2021/065540

    申请日：2021-06-09

    Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

    Inventor： VAN WEPEREN, Ilse ,  BEUKMAN, Arjan, Johannes, Anton ,  SWILLAM, Mohamed ,  KREUZER, Justin, Lloyd ,  ROUX, Stephen

    IPC: G01N21/95 ,  G01N21/956 ,  G03F1/84 ,  G01N2021/95676

    Abstract: Systems, apparatuses, and methods are provided for detecting a particle on a substrate surface. An example method can include receiving, by a grating structure, coherent radiation from a radiation source. The method can further include generating, by the grating structure, a focused coherent radiation beam based on the coherent radiation. The method can further include transmitting, by the grating structure, the focused coherent radiation beam toward a region of a surface of a substrate. The method can further include receiving, by the grating structure, photons scattered from the region in response to illuminating the region with the focused coherent radiation beam. The method can further include measuring, by a photodetector, the photons received by the grating structure. The method can further include generating, by the photodetector and based on the measured photons, an electronic signal for detecting a particle located in the region of the surface of the substrate.

    INTENSITY MEASUREMENTS USING OFF-AXIS ILLUMINATION
    8.
    发明申请
    INTENSITY MEASUREMENTS USING OFF-AXIS ILLUMINATION 审中-公开

    公开(公告)号：WO2023016773A1

    公开(公告)日：2023-02-16

    申请号：PCT/EP2022/070554

    申请日：2022-07-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： SWILLAM, Mohamed ,  ROUX, Stephen ,  KREUZER, Justin, Lloyd ,  REZVANI NARAGHI, Roxana

    IPC: G03F9/00

    Abstract: Systems, apparatuses, and methods are provided for measuring intensity using off-axis illumination. An example method can include illuminating a region of a surface of a substrate with a first radiation beam at a first incident angle and, in response, measuring a first set of photons diffracted from the region. The example method can further include illuminating the region with a second radiation beam at a second incident angle and, in response, measuring a second set of photons diffracted from the region. The example method can further include generating measurement data for the region based on the measured first set of photons and the measured second set of photons.

    SYSTEMS AND METHODS FOR MEASURING INTENSITY IN A LITHOGRAPHIC ALIGNMENT APPARATUS
    9.
    发明申请
    SYSTEMS AND METHODS FOR MEASURING INTENSITY IN A LITHOGRAPHIC ALIGNMENT APPARATUS 审中-公开

    公开(公告)号：WO2022157009A1

    公开(公告)日：2022-07-28

    申请号：PCT/EP2022/050094

    申请日：2022-01-04

    Applicant: ASML HOLDING N.V.

    Inventor： SWILLAM, Mohamed ,  KREUZER, Justin, Lloyd ,  ROUX, Stephen ,  NELSON, Michael, Leo ,  ERALP, Muhsin

    IPC: G03F7/20

    Abstract: A metrology system includes a radiation source, an adjustable diffractive element, an optical system, an optical element, and a processor. The radiation source generates radiation. The adjustable diffractive element diffracts the radiation to generate first and second beams of radiation. The first and second beams have first and second different non-zero diffraction orders, respectively. The optical system directs the first and second beams toward a target structure such that first and second scattered beams of radiation are generated based on the first and second beams, respectively. The metrology system adjusts a phase difference of the first and second scattered beams. The optical element interferes the first and second scattered beams at an imaging detector that generates a detection signal. The processor receives and analyzes the detection signal to determine a property of the target structure based on the adjusted phase difference.

    RETICLE SUB-FIELD THERMAL CONTROL
    10.
    发明申请
    RETICLE SUB-FIELD THERMAL CONTROL 审中-公开

    公开(公告)号：WO2020126807A1

    公开(公告)日：2020-06-25

    申请号：PCT/EP2019/084848

    申请日：2019-12-12

    Applicant: ASML HOLDING N.V.

    Inventor： MONKMAN, Eric, Justin ,  CHIEDA, Michael, Andrew ,  ROUX, Stephen ,  PEREZ-FALCON, Victor, Antonio

    IPC: G03F7/20

    Abstract: An apparatus for reticle sub-field thermal control in a lithography system is disclosed. The apparatus includes a clamp configured to fix an object. The clamp includes a plurality of gas distribution features that are spatially arranged in a pattern. The apparatus further includes a gas pressure controller configured to individually control a gas flow rate through each of the plurality of gas distribution features to spatially modulate a gas pressure distribution in a space between the clamp and the object. The gas distribution features include a plurality of trenches or holes arranged in an array form.

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