SYSTEM AND METHOD TO LOCALIZE SOUND AND PROVIDE REAL-TIME WORLD COORDINATES WITH COMMUNICATION
    2.
    发明申请
    SYSTEM AND METHOD TO LOCALIZE SOUND AND PROVIDE REAL-TIME WORLD COORDINATES WITH COMMUNICATION 审中-公开
    将声音本地化并提供实时世界协调的系统和方法与通信

    公开(公告)号:WO2015157426A3

    公开(公告)日:2015-12-10

    申请号:PCT/US2015024934

    申请日:2015-04-08

    Applicant: BEATY JOHN

    Abstract: A system, method and program product for improved techniques for sound management and sound localization is provided. The present invention provides for improving sound localization and detection by inputting a predetermined location's dimensional data and location reference and processing detected sound details, detection device details and the associated location dimensional data as sound localization information for multi-dimensional display. The present invention provides mapping information of sound, people and structural information for use in multiple applications including residential, commercial and emergency situations.

    Abstract translation: 提供了用于声音管理和声音定位的改进技术的系统,方法和程序产品。 本发明通过输入预定位置的尺寸数据和位置参考并且将检测到的声音细节,检测装置细节和相关联的位置尺寸数据作为多维显示的​​声音定位信息来提高声音定位和检测。 本发明提供用于包括住宅,商业和紧急情况在内的多种应用的声音,人物和结构信息的映射信息。

    PHOTOLITHOGRAPHY MASK REPAIR
    3.
    发明申请
    PHOTOLITHOGRAPHY MASK REPAIR 审中-公开
    光刻胶修复

    公开(公告)号:WO2004027684B1

    公开(公告)日:2005-01-06

    申请号:PCT/US0329521

    申请日:2003-09-18

    CPC classification number: G03F1/74 G03F1/72

    Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

    Abstract translation: 可以通过创建与原始设计不同的结构来修复面具,但产生相同的空间图像。 例如,可以通过注入镓原子来代替缺少的不透明材料以减少透射,并且可以将石英蚀刻到适当的深度以产生适当的相位。 在另一方面,可以使用激光器或其他装置去除缺陷周围的掩模区域,然后可以使用带电粒子束来构造掩模结构,或者产生相同空间图像的预期设计结构或替代结构 沉积和蚀刻。 例如,电子束可用于沉积石英以改变透射光的相位。 电子束也可与气体一起使用以蚀刻石英以除去包括注入的镓原子的层。 也可以通过提供可以使用例如宽离子束与注入的镓原子一起除去的牺牲层来还原或消除镓染色。 在另一方面,带电粒子束可被编程为使用从两个带电粒子束导出的来自不同角度的缺陷图像的三维信息来蚀刻缺陷。

    PHOTOLITHOGRAPHY MASK REPAIR
    4.
    发明申请
    PHOTOLITHOGRAPHY MASK REPAIR 审中-公开
    光刻胶面膜修复

    公开(公告)号:WO2004027684A3

    公开(公告)日:2004-11-04

    申请号:PCT/US0329521

    申请日:2003-09-18

    CPC classification number: G03F1/74 G03F1/72

    Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

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