公开(公告)号：WO2010059476A1

公开(公告)日：2010-05-27

申请号：PCT/US2009/064019

申请日：2009-11-11

Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY ,  CHAKRABARTTY, Shantanu

Inventor： CHAKRABARTTY, Shantanu

IPC: A61F2/46 ,  G01M5/00

CPC classification number: A61F2/468 ,  A61F2002/30087 ,  A61F2002/3067 ,  A61F2002/488 ,  A61F2250/0002 ,  G01L5/0052 ,  G01M5/00 ,  G01N29/043 ,  G01N29/2481 ,  G01N2203/0073 ,  G01N2203/0623 ,  G01N2291/02827 ,  H02N2/18

Abstract: A self-powered sensor (20) is provided for strain-rate monitoring and other low power requirement applications. The self -powered sensor is comprised of : a piezoelectric transducer (22); a non-volatile memory comprised of at least one floating gate transistor; a current reference circuit adapted to receive a voltage signal from the piezoelectric transducer and operable to output a reference current into the non-volatile memory; an impact-monitoring circuit having a triggering circuit and a switch; the triggering circuit adapted to receive the voltage signal from the piezoelectric transducer and operable to control the switch based on the rate of change of the voltage signal.

Abstract translation: 提供自供电传感器（20）用于应变率监测和其他低功率需求应用。 自动电力传感器包括：压电换能器（22）; 由至少一个浮栅晶体管构成的非易失性存储器; 电流参考电路，其适于从所述压电换能器接收电压信号并且可操作以将参考电流输出到所述非易失性存储器中; 具有触发电路和开关的冲击监视电路; 所述触发电路适于从压电换能器接收电压信号并且可操作以基于电压信号的变化率来控制开关。

公开(公告)号：WO2015039103A1

公开(公告)日：2015-03-19

申请号：PCT/US2014/055871

申请日：2014-09-16

Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY

Inventor： LAJNEF, Nizar ,  CHAKRABARTTY, Shantanu ,  BURGUENO, Rigoberto ,  WASSIM, Borchani

IPC: H01L41/08 ,  H01L41/113 ,  H02N2/18

CPC classification number: H02N2/181 ,  G01D9/00 ,  G01K5/00 ,  G01L9/08 ,  H01L41/1136 ,  H02N2/18

Abstract: A self-powered sensing system is provided for the monitoring of quasi-static structural responses. The sensing system is comprised of: an energy concentrator having a member configured to detect a variation of a physical stimuli and change shape in response to the variation of the physical stimuli, where the variation typically occurs at a frequency less than one Hertz; a transducer coupled the member of the energy concentrator and generates a voltage in response to the change in shape of the member; and an event logging circuit configured to receive the voltage from the transducer and log the voltage in a non-volatile memory. Physical stimuli may include temperature, pressure or an applied force.

Abstract translation: 提供一个自供电感测系统，用于监测准静态结构响应。 感测系统包括：能量集中器，其具有构造成响应于物理刺激的变化来检测物理刺激和变化形状的变化的构件，其中变化通常以小于1赫兹的频率发生; 耦合能量集中器的构件的传感器，并且响应于构件的形状变化而产生电压; 以及事件记录电路，被配置为从所述换能器接收电压并将所述电压记录在非易失性存储器中。 物理刺激可能包括温度，压力或施加的力。

公开(公告)号：WO2013081991A1

公开(公告)日：2013-06-06

申请号：PCT/US2012/066584

申请日：2012-11-27

Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY

Inventor： CHAKRABARTTY, Shantanu ,  GU, Ming ,  HUANG, Chenling

IPC: G11C16/04 ,  G11C27/00 ,  G11C27/02

CPC classification number: H01L27/11526 ,  G11C7/04 ,  G11C16/0408 ,  G11C16/0441 ,  G11C27/005 ,  G11C27/028 ,  H01L27/0629 ,  H01L28/40

Abstract: A temperature compensation technique is provided for a non-volatile memory arrangement. The memory arrangement includes: a memory circuit (12) having a floating gate transistor (P3) operating in weak-inversion mode and a varactor (C v ) with a terminal electrically coupled to a gate node of the floating gate transistor; a first current reference circuit (14) having a floating gate transistor (PI); a second current reference circuit (16) having a floating gate transistor (P2); and a control module (18) configured to selectively receive a reference current ( I 1 , l 2 ) from a drain of the floating gate transistor in each of the first and second current reference circuits. The control module operates to determine a ratio between the reference currents received from the first and second current reference circuits, generate a tuning voltage (V x ) in accordance with the ratio between the reference currents and apply the tuning voltage to the varactor in the memory circuit.

Abstract translation: 为非易失性存储器装置提供温度补偿技术。 存储器装置包括：具有以弱反相模式工作的浮栅晶体管（P3）的存储器电路（12）和与浮栅晶体管的栅极节点电耦合的端子的变容二极管（Cv）; 具有浮置栅极晶体管（PI）的第一电流参考电路（14）; 具有浮置栅极晶体管（P2）的第二电流参考电路（16）; 以及控制模块（18），被配置为从所述第一和第二电流参考电路中的每一个中的所述浮动栅极晶体管的漏极选择性地接收参考电流（I1，I2）。 控制模块操作以确定从第一和第二电流参考电路接收的参考电流之间的比率，根据参考电流之间的比率产生调谐电压（Vx），并将调谐电压施加到存储器电路中的变容二极管 。

公开(公告)号：WO2014130560A2

公开(公告)日：2014-08-28

申请号：PCT/US2014/017174

申请日：2014-02-19

Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY

Inventor： CHAKRABARTTY, Shantanu

IPC: H03K3/02

CPC classification number: G11C16/04 ,  G04F10/10

Abstract: A method is provided for implementing a timer using a floating-gate transistor. The method includes: injecting a charge into a floating-gate transistor at an initial time, where a gate terminal of the floating-gate transistor is comprised of polysilicon encased by an insulating material; creating lattice imperfections at boundary of the polysilicon to cause leakage from the floating-gate transistor; measuring current read out from the floating-gate transistor at a time subsequent to the initial time; and determining an amount of time between the initial time and the subsequent time using the measured current.

Abstract translation: 提供了一种使用浮栅晶体管来实现定时器的方法。 该方法包括：在初始时间将电荷注入到浮栅晶体管中，其中浮栅晶体管的栅极端子由被绝缘材料包围的多晶硅组成; 在多晶硅的边界处产生晶格缺陷以引起浮栅晶体管的泄漏; 测量在所述初始时间之后的时间从所述浮栅晶体管读出的电流; 并使用测量的电流确定初始时间与随后时间之间的时间量。

公开(公告)号：WO2013126181A1

公开(公告)日：2013-08-29

申请号：PCT/US2013/023407

申请日：2013-01-28

Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY

Inventor： CHAKRABARTTY, Shantanu

IPC: G11C16/34 ,  G01B7/16 ,  G11C27/00

CPC classification number: H01L41/1132 ,  A61B5/4509 ,  A61B5/4519 ,  A61B5/4533 ,  A61B5/6847 ,  G01B7/18 ,  G11C16/3468 ,  G11C16/3481 ,  G11C16/3486 ,  G11C27/005 ,  H01L27/20 ,  H01L29/7884

Abstract: A linear hot-electron injection technique is provided for a non-volatile memory arrangement. The non-volatile memory is comprised of: a floating gate transistor; a capacitor with a first terminal electrically coupled to the gate node of the floating gate transistor; a current reference circuit electrically coupled to the source node of the floating gate transistor; and a feedback circuit electrically coupled between the source node of the floating gate transistor and a second terminal of the capacitor. The feedback circuit operates to adjust a voltage at the gate node of the floating gate transistor in accordance with a source-to-drain voltage across the floating gate transistor.

Abstract translation: 为非易失性存储装置提供线性热电子注入技术。 非易失性存储器包括：浮栅晶体管; 电容器，其具有电耦合到所述浮栅晶体管的栅极节点的第一端子; 电流参考电路，电耦合到所述浮栅晶体管的源节点; 以及电耦合在浮栅晶体管的源节点和电容器的第二端之间的反馈电路。 反馈电路根据浮栅晶体管两端的源极 - 漏极电压来工作，以调节浮置栅极晶体管的栅极节点处的电压。